Z. Feit

507 total citations
24 papers, 363 citations indexed

About

Z. Feit is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, Z. Feit has authored 24 papers receiving a total of 363 indexed citations (citations by other indexed papers that have themselves been cited), including 18 papers in Electrical and Electronic Engineering, 12 papers in Atomic and Molecular Physics, and Optics and 9 papers in Materials Chemistry. Recurrent topics in Z. Feit's work include Chalcogenide Semiconductor Thin Films (11 papers), Semiconductor Quantum Structures and Devices (10 papers) and Quantum Dots Synthesis And Properties (8 papers). Z. Feit is often cited by papers focused on Chalcogenide Semiconductor Thin Films (11 papers), Semiconductor Quantum Structures and Devices (10 papers) and Quantum Dots Synthesis And Properties (8 papers). Z. Feit collaborates with scholars based in United States, Israel and Austria. Z. Feit's co-authors include R. J. Woods, Paul Mak, M. McDonald, D. R. Day, T.J. Lewis, S.D. Senturia, F. W. Smith, A. Peled, Д. Егер and H. Preier and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Z. Feit

22 papers receiving 343 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Z. Feit United States 10 274 182 167 66 39 24 363
Y. Cuminal France 14 537 2.0× 264 1.5× 288 1.7× 86 1.3× 41 1.1× 50 584
Б.А. Акимов Russia 11 268 1.0× 189 1.0× 216 1.3× 9 0.1× 20 0.5× 47 360
Takanori Suzuki Japan 11 223 0.8× 166 0.9× 188 1.1× 10 0.2× 50 1.3× 39 372
Takeya Unuma Japan 12 276 1.0× 238 1.3× 31 0.2× 111 1.7× 60 1.5× 39 373
Vadim P. Sirkeli Moldova 13 228 0.8× 125 0.7× 207 1.2× 38 0.6× 81 2.1× 35 359
V. G. Mokerov Russia 11 234 0.9× 253 1.4× 89 0.5× 18 0.3× 31 0.8× 76 350
Alice L. Lin United States 7 228 0.8× 195 1.1× 68 0.4× 22 0.3× 19 0.5× 15 324
Е. В. Спесивцев Russia 10 210 0.8× 144 0.8× 112 0.7× 13 0.2× 64 1.6× 34 312
Tomoki Abe Japan 10 254 0.9× 226 1.2× 230 1.4× 32 0.5× 41 1.1× 57 417
Armando Somintac Philippines 11 327 1.2× 224 1.2× 148 0.9× 40 0.6× 88 2.3× 92 441

Countries citing papers authored by Z. Feit

Since Specialization
Citations

This map shows the geographic impact of Z. Feit's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Z. Feit with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Z. Feit more than expected).

Fields of papers citing papers by Z. Feit

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Z. Feit. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Z. Feit. The network helps show where Z. Feit may publish in the future.

Co-authorship network of co-authors of Z. Feit

This figure shows the co-authorship network connecting the top 25 collaborators of Z. Feit. A scholar is included among the top collaborators of Z. Feit based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Z. Feit. Z. Feit is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Sampath, Anand V., et al.. (2000). A Comparative Study Of GaN Diodes Grown by MBE on Sapphire and HVPE-GaN /Sapphire Substrates. MRS Internet Journal of Nitride Semiconductor Research. 5(S1). 577–583. 4 indexed citations
2.
Sampath, Anand V., et al.. (2000). GaN photodiodes grown by MBE on HVPE and ELO-HVPE GaN\sapphire substrates. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 3948. 311–311. 2 indexed citations
3.
4.
Wells, J. S., et al.. (1997). Towards Extended-Cavity Grating-Tuned Mid-Infrared Diode Laser Operation. 1 indexed citations
5.
Feit, Z., et al.. (1995). Molecular beam epitaxy-grown separate confinement buried heterostructure PbEuSeTe-PbTe diode lasers. IEEE Photonics Technology Letters. 7(12). 1403–1405. 1 indexed citations
6.
Feit, Z., et al.. (1994). Development of IR tunable diode lasers and source assemblies for atmospheric monitoring and related applications. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 2112. 2–2.
7.
Feit, Z., et al.. (1993). Measurements of the refractive index of PbEuTe in the 3–10-μm region of the infrared. Applied Optics. 32(6). 966–966. 1 indexed citations
8.
Feit, Z., et al.. (1991). Single-mode molecular beam epitaxy grown PbEuSeTe/PbTe buried-heterostructure diode lasers for CO2 high-resolution spectroscopy. Applied Physics Letters. 58(4). 343–345. 59 indexed citations
9.
Feit, Z., et al.. (1990). Molecular beam epitaxy grown PbEuSeTe buried-heterostructure lasers with continuous wave operation at 195 K. Applied Physics Letters. 57(27). 2891–2893. 15 indexed citations
10.
Feit, Z., et al.. (1990). Molecular beam epitaxy-grown PbSnTe-PbEuSeTe buried heterostructure diode lasers. IEEE Photonics Technology Letters. 2(12). 860–862. 8 indexed citations
11.
Feit, Z., et al.. (1990). PbEuSeTe buried heterostructure lasers grown by molecular-beam epitaxy. Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena. 8(2). 200–204. 9 indexed citations
12.
Feit, Z., et al.. (1989). Low-threshold PbEuSeTe double-heterostructure lasers grown by molecular beam epitaxy. Applied Physics Letters. 55(1). 16–18. 19 indexed citations
13.
Heinrich, H., et al.. (1989). Band-edge offsets in PbSePbEuSe and PbTePbEuTeSe heterostructures deduced from electron-beam-induced current. Superlattices and Microstructures. 5(2). 175–179. 6 indexed citations
14.
Feit, Z., et al.. (1988). Reflection high-energy electron diffraction intensity oscillations in IV-VI compound semiconductors. Applied Physics Letters. 53(10). 894–896. 15 indexed citations
15.
McCann, Patrick J., et al.. (1987). Phase equilibria and liquid-phase-epitaxy growth of PbSnSeTe lattice-matched to PbSe. Journal of Applied Physics. 62(7). 2994–3000. 19 indexed citations
16.
Smith, F. W., et al.. (1987). Electrical conduction in polyimide between 20 and 350° C. Journal of Electronic Materials. 16(1). 93–106. 50 indexed citations
17.
Feit, Z., Д. Егер, & A. Zemel. (1985). Quasilocal impurity states inPb1xSnxTe andPbSe0.08Te0.92liquid-phase epitaxial layers doped with group-III elements. Physical review. B, Condensed matter. 31(6). 3903–3909. 13 indexed citations
18.
Zussman, A., Z. Feit, Д. Егер, & A. Shahar. (1983). Long wavelength Pb1−xSnxTe homostructure diode lasers having a gallium-doped cladding layer. Applied Physics Letters. 42(4). 344–346. 2 indexed citations
19.
Feit, Z., et al.. (1983). Temperature dependence of mobility in heavily doped n-type PbTe layers grown by LPE. Physics Letters A. 98(8-9). 451–454. 3 indexed citations
20.
Peled, A., et al.. (1978). Photodeposition of amorphous selenium films by the “selor” process I: Main features of the process, film structure. Thin Solid Films. 50. 273–282. 22 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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