E. A. Klimov

547 total citations
75 papers, 417 citations indexed

About

E. A. Klimov is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Biomedical Engineering. According to data from OpenAlex, E. A. Klimov has authored 75 papers receiving a total of 417 indexed citations (citations by other indexed papers that have themselves been cited), including 69 papers in Atomic and Molecular Physics, and Optics, 58 papers in Electrical and Electronic Engineering and 16 papers in Biomedical Engineering. Recurrent topics in E. A. Klimov's work include Semiconductor Quantum Structures and Devices (67 papers), Advanced Semiconductor Detectors and Materials (26 papers) and Terahertz technology and applications (16 papers). E. A. Klimov is often cited by papers focused on Semiconductor Quantum Structures and Devices (67 papers), Advanced Semiconductor Detectors and Materials (26 papers) and Terahertz technology and applications (16 papers). E. A. Klimov collaborates with scholars based in Russia, Tajikistan and Lithuania. E. A. Klimov's co-authors include Г. Б. Галиев, И. С. Васильевский, С. С. Пушкарев, P. P. Maltsev, V. A. Kulbachinskiı̆, Р. А. Хабибуллин, Д. С. Пономарев, Р. М. Имамов, V. G. Mokerov and K. Požela and has published in prestigious journals such as Journal of Applied Physics, Journal of materials research/Pratt's guide to venture capital sources and Journal of Crystal Growth.

In The Last Decade

E. A. Klimov

68 papers receiving 379 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
E. A. Klimov Russia 11 351 347 75 59 54 75 417
Г. Б. Галиев Russia 12 433 1.2× 418 1.2× 84 1.1× 70 1.2× 75 1.4× 106 519
С. С. Пушкарев Russia 10 233 0.7× 264 0.8× 59 0.8× 72 1.2× 53 1.0× 69 329
N. Chimot France 11 236 0.7× 355 1.0× 55 0.7× 66 1.1× 91 1.7× 41 419
Christophe Coinon France 11 180 0.5× 319 0.9× 95 1.3× 38 0.6× 71 1.3× 39 372
Yannick Roelens France 12 335 1.0× 417 1.2× 71 0.9× 110 1.9× 47 0.9× 39 470
M. P. Lilly United States 7 285 0.8× 229 0.7× 77 1.0× 64 1.1× 55 1.0× 11 364
C. J. Hunter United Kingdom 8 336 1.0× 266 0.8× 44 0.6× 15 0.3× 77 1.4× 11 355
Y. Roelens France 6 317 0.9× 413 1.2× 84 1.1× 127 2.2× 26 0.5× 10 439
Naofumi Shimizu Japan 12 225 0.6× 487 1.4× 41 0.5× 66 1.1× 17 0.3× 44 515
M. B. Lifshits Russia 8 282 0.8× 240 0.7× 31 0.4× 76 1.3× 61 1.1× 16 356

Countries citing papers authored by E. A. Klimov

Since Specialization
Citations

This map shows the geographic impact of E. A. Klimov's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by E. A. Klimov with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites E. A. Klimov more than expected).

Fields of papers citing papers by E. A. Klimov

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by E. A. Klimov. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by E. A. Klimov. The network helps show where E. A. Klimov may publish in the future.

Co-authorship network of co-authors of E. A. Klimov

This figure shows the co-authorship network connecting the top 25 collaborators of E. A. Klimov. A scholar is included among the top collaborators of E. A. Klimov based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with E. A. Klimov. E. A. Klimov is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Klimov, E. A., et al.. (2024). Generation of THz Radiation by (100), (110), and (111)A-Oriented Multiple Pseudomorphic InGaAs/GaAs Quantum Wells and Photoconductive Antennas. Bulletin of the Lebedev Physics Institute. 51(S4). S316–S325.
2.
Smirnov, K., et al.. (2020). Pulsed terahertz radiation from a double-barrier resonant tunneling diode biased into self-oscillation regime. Journal of Applied Physics. 128(22). 4 indexed citations
3.
Пушкарев, С. С., et al.. (2020). Photoluminescence of extended defects in heterostructures with InAlAs metamorphic buffer at different excitation wavelengths. Journal of Luminescence. 226. 117412–117412. 1 indexed citations
4.
5.
Галиев, Г. Б., E. A. Klimov, A. L. Vasiliev, et al.. (2017). Influence of arsenic flow on the crystal structure of epitaxial GaAs grown at low temperatures on GaAs (100) and (111)A substrates. Crystallography Reports. 62(1). 82–90. 4 indexed citations
6.
Мишина, Е. Д., et al.. (2017). Ultrafast carrier dynamics in LT-GaAs doped with Si delta layers. International Journal of Modern Physics B. 31(27). 1750195–1750195. 6 indexed citations
7.
Галиев, Г. Б., G. Kh. Kitaeva, E. A. Klimov, et al.. (2017). Генерация терагерцевого излучения в низкотемпературных эпитаксиальных пленках InGaAs на подложках InP с ориентациями (100) и (411) A. Физика и техника полупроводников. 51(3). 322–322.
8.
Галиев, Г. Б., E. A. Klimov, Р. М. Имамов, et al.. (2016). High-resolution X-ray diffractometry and transmission electron microscopy as applied to the structural study of InAlAs/InGaAs/InAlAs multilayer transistor nanoheterostructures. Journal of Surface Investigation X-ray Synchrotron and Neutron Techniques. 10(3). 495–509.
9.
Галиев, Г. Б., И. С. Васильевский, E. A. Klimov, et al.. (2015). Electrophysical and structural properties of the composite quantum wells In0.52Al0.48As/InxGa1−xAs/In0.52Al0.48As with ultrathin InAs inserts. Journal of materials research/Pratt's guide to venture capital sources. 30(20). 3020–3025. 4 indexed citations
10.
11.
Галиев, Г. Б., et al.. (2015). Specific features of the photoluminescence of HEMT nanoheterostructures containing a composite InAlAs/InGaAs/InAs/InGaAs/InAlAs quantum well. Semiconductors. 49(2). 234–241. 9 indexed citations
12.
13.
Галиев, Г. Б., E. A. Klimov, P. P. Maltsev, et al.. (2013). Electrical and structural characteristics of metamorphic In0.38Al0.62As/In0.37Ga0.63As/In0.38Al0.62As HEMT nanoheterostructures. Crystallography Reports. 58(6). 914–919. 2 indexed citations
14.
Галиев, Г. Б., et al.. (2013). Measurement of the concentration of 2D electrons in δ-doped InGaAs/GaAs pseudomorphic transistor structures using the photoluminescence spectroscopy. Journal of Communications Technology and Electronics. 58(3). 243–249. 3 indexed citations
15.
Хабибуллин, Р. А., Г. Б. Галиев, E. A. Klimov, et al.. (2013). Electrical and optical properties of near-surface AlGaAs/InGaAs/AlGaAs quantum wells with different quantum-well depths. Semiconductors. 47(9). 1203–1208. 6 indexed citations
16.
Хабибуллин, Р. А., et al.. (2012). The built-in electric field in P-HEMT heterostructures with near-surface quantum wells AlxGa1−xAs/InyGa1−yAs/GaAs. Journal of Physics Conference Series. 345. 12015–12015. 3 indexed citations
17.
Пономарев, Д. С., И. С. Васильевский, Г. Б. Галиев, et al.. (2012). Electron mobility and effective mass in composite InGaAs quantum wells with InAs and GaAs nanoinserts. Semiconductors. 46(4). 484–490. 16 indexed citations
18.
Васильевский, И. С., Г. Б. Галиев, Р. М. Имамов, et al.. (2011). Structural and electrical properties of quantum wells with nanoscale InAs inserts in In y Al1 − y As/In x Ga1 − x As heterostructures on InP substrates. Crystallography Reports. 56(2). 298–309. 10 indexed citations
19.
Хабибуллин, Р. А., И. С. Васильевский, Г. Б. Галиев, et al.. (2011). Scattering and electron mobility in combination-doped HFET-structures AlGaAs/InGaAs/AlGaAs with high electron density. Semiconductors. 45(10). 1321–1326. 5 indexed citations
20.
Хабибуллин, Р. А., И. С. Васильевский, Г. Б. Галиев, et al.. (2011). Effect of the built-in electric field on optical and electrical properties of AlGaAs/InGaAs/GaAs P-HEMT nanoheterostructures. Semiconductors. 45(5). 657–662. 15 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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