Tomomasa Ueda

437 total citations
21 papers, 343 citations indexed

About

Tomomasa Ueda is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Tomomasa Ueda has authored 21 papers receiving a total of 343 indexed citations (citations by other indexed papers that have themselves been cited), including 18 papers in Electrical and Electronic Engineering, 11 papers in Materials Chemistry and 3 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Tomomasa Ueda's work include Thin-Film Transistor Technologies (14 papers), Semiconductor materials and devices (9 papers) and ZnO doping and properties (5 papers). Tomomasa Ueda is often cited by papers focused on Thin-Film Transistor Technologies (14 papers), Semiconductor materials and devices (9 papers) and ZnO doping and properties (5 papers). Tomomasa Ueda collaborates with scholars based in Japan. Tomomasa Ueda's co-authors include Nobuyoshi Saito, Keiji Ikeda, Hajime Yamaguchi, Isao Amemiya, Shintaro Nakano, Tatsunori Sakano, Keiji Sugi, Yuta Sato, Hirokazu Fujiwara and Tsutomu Tezuka and has published in prestigious journals such as Journal of Applied Physics, IEEE Transactions on Electron Devices and Japanese Journal of Applied Physics.

In The Last Decade

Tomomasa Ueda

19 papers receiving 317 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Tomomasa Ueda Japan 11 256 164 105 45 45 21 343
N. Kornilios Greece 8 227 0.9× 208 1.3× 149 1.4× 67 1.5× 86 1.9× 22 349
Yoichi Nabetani Japan 7 314 1.2× 184 1.1× 164 1.6× 49 1.1× 25 0.6× 26 376
Jan D. Koenig Germany 8 169 0.7× 441 2.7× 76 0.7× 44 1.0× 43 1.0× 18 485
M.L. Locatelli France 10 228 0.9× 183 1.1× 68 0.6× 40 0.9× 151 3.4× 26 373
Edward Wrzesniewski United States 8 434 1.7× 133 0.8× 126 1.2× 28 0.6× 88 2.0× 9 470
K. P. Muthe India 13 193 0.8× 373 2.3× 132 1.3× 34 0.8× 82 1.8× 32 456
Shogo Hatayama Japan 13 455 1.8× 502 3.1× 158 1.5× 46 1.0× 62 1.4× 48 580
Ali M. Mousa Iraq 14 300 1.2× 376 2.3× 57 0.5× 42 0.9× 111 2.5× 48 480
Gentaro Ohbayashi Japan 7 227 0.9× 309 1.9× 63 0.6× 15 0.3× 89 2.0× 10 343
Sumit Vyas India 10 273 1.1× 308 1.9× 39 0.4× 32 0.7× 56 1.2× 20 415

Countries citing papers authored by Tomomasa Ueda

Since Specialization
Citations

This map shows the geographic impact of Tomomasa Ueda's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Tomomasa Ueda with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Tomomasa Ueda more than expected).

Fields of papers citing papers by Tomomasa Ueda

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Tomomasa Ueda. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Tomomasa Ueda. The network helps show where Tomomasa Ueda may publish in the future.

Co-authorship network of co-authors of Tomomasa Ueda

This figure shows the co-authorship network connecting the top 25 collaborators of Tomomasa Ueda. A scholar is included among the top collaborators of Tomomasa Ueda based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Tomomasa Ueda. Tomomasa Ueda is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Saito, Nobuyoshi, et al.. (2021). High thermal stability of doped oxide semiconductor for monolithic 3D integration. MRS Bulletin. 46(11). 1044–1052. 6 indexed citations
2.
3.
Fujiwara, Hirokazu, Yuta Sato, Nobuyoshi Saito, Tomomasa Ueda, & Keiji Ikeda. (2020). Surrounding Gate Vertical-Channel FET with Gate Length of 40 nm using BEOL Compatible High-Thermal-Tolerance In-Al-Zn Oxide Channel. 1–2. 13 indexed citations
4.
Fujiwara, Hirokazu, Yuta Sato, Nobuyoshi Saito, Tomomasa Ueda, & Keiji Ikeda. (2020). Surrounding Gate Vertical-Channel FET With a Gate Length of 40 nm Using BEOL-Compatible High-Thermal-Tolerance In-Al-Zn Oxide Channel. IEEE Transactions on Electron Devices. 67(12). 5329–5335. 43 indexed citations
5.
Saito, Nobuyoshi, et al.. (2019). High mobility (>30 cm 2  V −1  s −1 ) and low source/drain parasitic resistance In–Zn–O BEOL transistor with ultralow <10−20 A μ m −1 off-state leakage current. Japanese Journal of Applied Physics. 58(SB). SBBJ07–SBBJ07. 12 indexed citations
6.
Saito, Nobuyoshi, et al.. (2019). Tungsten/In–Sn–O stacked source/drain electrode structure of In–Ga–Zn–O thin-film transistor for low-contact resistance and suppressing channel shortening effect. Japanese Journal of Applied Physics. 58(SB). SBBJ03–SBBJ03. 8 indexed citations
7.
Saito, Nobuyoshi, et al.. (2018). High-Mobility and H2-Anneal Tolerant InGaSiO/InGaZnO/InGaSiO Double Hetero Channel Thin Film Transistor for Si-LSI Compatible Process. IEEE Journal of the Electron Devices Society. 6. 500–505. 22 indexed citations
8.
Saito, Nobuyoshi, Tomomasa Ueda, Tsutomu Tezuka, & Keiji Ikeda. (2018). Origin of High Mobility in InSnZnO MOSFETs. IEEE Journal of the Electron Devices Society. 6. 1253–1257. 13 indexed citations
9.
10.
Ueda, Tomomasa, Nobuyoshi Saito, Shintaro Nakano, et al.. (2013). Flexible AMOLED display driven by amorphous InGaZnO TFTs. 29–32. 2 indexed citations
11.
Saito, Nobuyoshi, Tomomasa Ueda, Shintaro Nakano, et al.. (2013). 70.1L: Late‐News Paper : 10.2‐inch WUXGA Flexible AMOLED Display Driven by Amorphous Oxide TFTs on Plastic Substrate. SID Symposium Digest of Technical Papers. 44(1). 443–446. 14 indexed citations
12.
Yamaguchi, Hajime, Tomomasa Ueda, Nobuyoshi Saito, et al.. (2012). 74.2L: Late‐News Paper : 11.7‐inch Flexible AMOLED Display Driven by a‐IGZO TFTs on Plastic Substrate. SID Symposium Digest of Technical Papers. 43(1). 1002–1005. 63 indexed citations
13.
Ueda, Tomomasa, Shintaro Nakano, Nobuyoshi Saito, et al.. (2011). 4.1: Low‐Temperature‐Processed IGZO TFTs for Flexible AMOLED with Integrated Gate Driver Circuits. SID Symposium Digest of Technical Papers. 42(1). 21–24. 16 indexed citations
14.
Nagamine, M., Tomomasa Ueda, H. Aikawa, et al.. (2010). Effect of Self-Heating on Time-Dependent Dielectric Breakdown in Ultrathin MgO Magnetic Tunnel Junctions for Spin Torque Transfer Switching Magnetic Random Access Memory. Japanese Journal of Applied Physics. 49(4S). 04DD15–04DD15. 25 indexed citations
15.
Ikegawa, S., H. Aikawa, Tomomasa Ueda, et al.. (2007). Temperature dependence of tunnel resistance for CoFeB∕MgO∕CoFeB magnetoresistive tunneling junctions: The role of magnon. Journal of Applied Physics. 101(9). 7 indexed citations
16.
Yoshikawa, Masatoshi, Tomomasa Ueda, H. Aikawa, et al.. (2007). Estimation of spin transfer torque effect and thermal activation effect on magnetization reversal in CoFeB∕MgO∕CoFeB magnetoresistive tunneling junctions. Journal of Applied Physics. 101(9). 13 indexed citations
17.
Akiyama, Masahiko, et al.. (2000). Preparation of Pb(Zr, Ti)O3 Thin Films on Glass Substrates. Japanese Journal of Applied Physics. 39(9S). 5408–5408. 5 indexed citations
18.
Akiyama, Masahiko, et al.. (2000). Low-Power Operation of an Image-Memory LCD using Ferroelectric Film. Molecular crystals and liquid crystals science technology. Section A, Molecular crystals and liquid crystals. 346(1). 201–207.
19.
Akiyama, Masahiko, et al.. (1999). A Low‐Power, Image‐Memory LCD using Ferroelectric Film with Gray‐Scale Capability. SID Symposium Digest of Technical Papers. 30(1). 10–13. 2 indexed citations
20.
Akiyama, Masahiko, et al.. (1999). Preparation of Pb(Zr, Ti)O3 Thin Films by Plasma-Assisted Sputtering. Japanese Journal of Applied Physics. 38(9S). 5375–5375. 6 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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