B.M. Welch

1.4k total citations
53 papers, 941 citations indexed

About

B.M. Welch is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Hardware and Architecture. According to data from OpenAlex, B.M. Welch has authored 53 papers receiving a total of 941 indexed citations (citations by other indexed papers that have themselves been cited), including 49 papers in Electrical and Electronic Engineering, 21 papers in Atomic and Molecular Physics, and Optics and 4 papers in Hardware and Architecture. Recurrent topics in B.M. Welch's work include Semiconductor materials and devices (29 papers), Advancements in Semiconductor Devices and Circuit Design (24 papers) and Integrated Circuits and Semiconductor Failure Analysis (16 papers). B.M. Welch is often cited by papers focused on Semiconductor materials and devices (29 papers), Advancements in Semiconductor Devices and Circuit Design (24 papers) and Integrated Circuits and Semiconductor Failure Analysis (16 papers). B.M. Welch collaborates with scholars based in United States. B.M. Welch's co-authors include R.C. Eden, R. Zucca, F. H. Eisen, J. W. Mayer, S.I. Long, J.E. Westmoreland, Kenji Gamo, T. Inada, James S. Harris and J.A. Higgins and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Proceedings of the IEEE.

In The Last Decade

B.M. Welch

48 papers receiving 860 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
B.M. Welch United States	19	868	394	167	102	95	53	941
D. J. Bartelink United States	15	594 0.7×	273 0.7×	55 0.3×	39 0.4×	127 1.3×	43	726
H. Pötzl Austria	14	676 0.8×	245 0.6×	116 0.7×	15 0.1×	116 1.2×	40	770
T.R. Weatherford United States	20	899 1.0×	107 0.3×	57 0.3×	103 1.0×	50 0.5×	57	953
T. Kure Japan	17	921 1.1×	218 0.6×	47 0.3×	60 0.6×	161 1.7×	69	1.0k
G. Declerck Belgium	18	1.1k 1.2×	401 1.0×	30 0.2×	14 0.1×	140 1.5×	83	1.2k
F.J. Zutavern United States	18	851 1.0×	561 1.4×	55 0.3×	89 0.9×	98 1.0×	104	1.1k
J. A. Silberman United States	18	647 0.7×	340 0.9×	50 0.3×	19 0.2×	223 2.3×	57	885
J.Y.-C. Sun United States	25	1.9k 2.2×	487 1.2×	35 0.2×	35 0.3×	215 2.3×	102	2.0k
H.C. de Graaff Netherlands	19	1.9k 2.2×	549 1.4×	18 0.1×	57 0.6×	245 2.6×	62	2.0k
P.E. Cottrell United States	19	1.1k 1.3×	142 0.4×	37 0.2×	21 0.2×	45 0.5×	40	1.2k

Countries citing papers authored by B.M. Welch

Since Specialization

Citations

This map shows the geographic impact of B.M. Welch's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by B.M. Welch with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites B.M. Welch more than expected).

Fields of papers citing papers by B.M. Welch

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by B.M. Welch. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by B.M. Welch. The network helps show where B.M. Welch may publish in the future.

Co-authorship network of co-authors of B.M. Welch

This figure shows the co-authorship network connecting the top 25 collaborators of B.M. Welch. A scholar is included among the top collaborators of B.M. Welch based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with B.M. Welch. B.M. Welch is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Wilson, Mark R., et al.. (2003). Manufacturing GaAs digital ICs with 100 mm substrates-the smooth transition. 231–234.

Wilson, Mark R., et al.. (2002). Extending the performance envelope of 0.5 μm implanted SAG-MESFET's for supercomputer applications. 189–192. 1 indexed citations

Nelson, David A., et al.. (1987). The Effects of Proton Implant on GaAs Isolation Properties. Journal of The Electrochemical Society. 134(10). 2549–2552. 7 indexed citations

Eden, R.C., et al.. (1983). Integrated circuits - The case for gallium arsenide. 20. 30–37. 14 indexed citations

Zucca, R., et al.. (1983). Recent Advances in GaAs Digital IC Technology. Japanese Journal of Applied Physics. 22(S1). 349–349.

Zucca, R., et al.. (1982). RECENT ADVANCES IN GaAs DIGITAL IC TECHNOLOGY. 1 indexed citations

Welch, B.M., R. Zucca, E. Shen, et al.. (1982). A high-speed LSI GaAs 8x8 bit parallel multiplier. IEEE Journal of Solid-State Circuits. 17(4). 638–647. 25 indexed citations

Lee, Chien-Ping, B.M. Welch, & R. Zucca. (1982). Saturated resistor load for GaAs integrated circuits. IEEE Transactions on Electron Devices. 29(7). 1103–1109. 4 indexed citations

Shen, Edward, et al.. (1982). High-Speed GaAs SDFL Divider Circuit. IEEE Transactions on Microwave Theory and Techniques. 30(7). 1020–1026. 1 indexed citations

10.

Welch, B.M., et al.. (1981). Reliability of AuGe/Pt and AuGe/Ni ohmic contacts on GaAs. Electronics Letters. 17(12). 407–408. 30 indexed citations

11.

Asbeck, P.M., et al.. (1979). WP-A2 Effects of Cr redistribution on device characteristics in ion-implanted GaAs IC's fabricated with semi-insulating GaAs. IEEE Transactions on Electron Devices. 26(11). 1853–1853. 2 indexed citations

12.

Long, S.I., et al.. (1979). MSI HIGH SPEED LOW POWER GaAs INTEGRATED CIRCUITS. 2 indexed citations

13.

Eden, R.C., B.M. Welch, & R. Zucca. (1978). Low power GaAs digital ICs using Schottky diode-FET logic. 68–69. 20 indexed citations

14.

Eden, R.C. & B.M. Welch. (1977). IVb-3 low power depletion mode ion-implanted GaAs FET integrated circuits. IEEE Transactions on Electron Devices. 24(9). 1209–1210. 8 indexed citations

15.

Higgins, J.A., B.M. Welch, F. H. Eisen, & G. D. Robinson. (1976). Performance of selenium-ion-implanted GaAs f.e.t.s. Electronics Letters. 12(18). 462–464. 2 indexed citations

16.

Higgins, J.A., B.M. Welch, F. H. Eisen, & G. D. Robinson. (1975). Performance of ion-implanted GaAs MESFETs. 21. 5–5. 1 indexed citations

17.

Welch, B.M., et al.. (1975). Tellurium-implanted N+ layers in GaAs. Solid-State Electronics. 18(11). 977–981. 9 indexed citations

18.

Welch, B.M., F. H. Eisen, & J.A. Higgins. (1974). Gallium arsenide field-effect transistors by ion implantation. Journal of Applied Physics. 45(8). 3685–3687. 17 indexed citations

19.

Harris, James S., et al.. (1972). Influence of implantation temperature and surface protection on tellurium implantation in GaAs. Applied Physics Letters. 21(12). 601–603. 60 indexed citations

20.

Eisen, F. H. & B.M. Welch. (1971). Flux and fluence dependence of disorder produced during implantation of¹¹B in silicon. Radiation Effects. 7(1-2). 143–148. 42 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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