Stephen Eglash

2.1k citations

42 papers · 1.6k indexed · 1 hit paper · h-index 18

Atomic and Molecular Physics, and Optics top 2%
- Semiconductor Quantum Structures and Devices 31
- Semiconductor materials and interfaces 15
Spectroscopy top 2%
- Spectroscopy and Laser Applications 6
Electrical and Electronic Engineering top 5%
- Semiconductor materials and devices 14
- Semiconductor Lasers and Optical Devices 13
- Advanced Semiconductor Detectors and Materials 10
Surfaces, Coatings and Films top 10%
- Electron and X-Ray Spectroscopy Techniques 4
Condensed Matter Physics top 10%
- GaN-based semiconductor devices and materials 4

Co-authors: Lawrence C. West H. K. Choi G. W. Turner W. E. Spicer E. R. Brown I. Lindau N. Newman Shihui Pan
Cited by: Atomic and Molecular Physics, and Optics Spectroscopy Electrical and Electronic Engineering
Journals: Applied Physics Letters (8 papers)Journal of Applied Physics (3 papers)Journal of Crystal Growth (3 papers)
Partner nations: United States Russia

In The Last Decade

Stephen Eglash

39 papers receiving 1.5k citations

Hit Papers

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Peers

Countries citing papers authored by Stephen Eglash

Since Specialization

Citations

This map shows the geographic impact of Stephen Eglash's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Stephen Eglash with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Stephen Eglash more than expected).

Fields of papers citing papers by Stephen Eglash

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Stephen Eglash. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Stephen Eglash. The network helps show where Stephen Eglash may publish in the future.

Co-authorship network

The 25 scholars most cited alongside Stephen Eglash, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Stephen Eglash Line = papers co-authored together Stephen Eglash links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Mid-infrared diode lasers Stephen Eglash,H. K. Choi	2005	0
2	Double-heterostructure diode lasers emitting at 3 μm with a metastable GaInAsSb active layer and AlGaAsSb cladding layers Applied Physics Letters ·H. K. Choi,Stephen Eglash,G. W. Turner	1994	51
3	High-power GaInAsSb-AlGaAsSb multiple-quantum-well diode lasers emitting at 1.9 /spl mu/m IEEE Photonics Technology Letters ·H. K. Choi,G. W. Turner,Stephen Eglash	1994	59
4	InAsSb/AlAsSb double-heterostructure diode lasers emitting at 4 μm Applied Physics Letters ·Stephen Eglash,H. K. Choi	1994	30
5	Band offsets in GaSb/AlGaAsSb: Correlation with the Schottky barrier height and the depth of native acceptors Solid-State Electronics ·A. Y. Polyakov,A. G. Milnes,Stephen Eglash,Margaret Calverley,Yaw-Tseng Tseng	1993	6
6	The influence of hydrogen plasma treatment and proton implantation of electrical properties of AlGaAsSb Journal of Applied Physics ·A. Y. Polyakov,Stephen Eglash,A. G. Milnes,Margaret Calverley,S. J. Pearton,R. G. Wilson	1993	2
7	High-power multiple-quantum-well GaInAsSb/AlGaAsSb diode lasers emitting at 2.1 μm with low threshold current density Applied Physics Letters ·H. K. Choi,Stephen Eglash	1992	96
8	High-efficiency high-power GaInAsSb-AlGaAsSb double-heterostructure lasers emitting at 2.3 mu m IEEE Journal of Quantum Electronics ·H. K. Choi,Stephen Eglash	1991	37
9	MBE growth of GaInAsSb/AlGaAsSb double heterostructures for infrared diode lasers Journal of Crystal Growth ·Stephen Eglash,H. K. Choi,G. W. Turner	1991	34
10	Room-temperature cw operation at 2.2 μm of GaInAsSb/AlGaAsSb diode lasers grown by molecular beam epitaxy Applied Physics Letters ·H. K. Choi,Stephen Eglash	1991	52
11	Efficient GaInAsSb/AlGaAsSb diode lasers emitting at 2.29 μm Applied Physics Letters ·Stephen Eglash,H. K. Choi	1990	43
12	MBE Growth of GaInAsSb/A1GaAsSb Double Heterostructures for Diode Lasers Emitting Beyond 2 μm MRS Proceedings ·Stephen Eglash,H. K. Choi,G. W. Turner,YJ Wu	1990	1
13	Monolithic GaAs/Si Integration MRS Proceedings ·G. W. Turner,H. K. Choi,J.P. Mattia,Feifei Ran,Stephen Eglash,B-Y. Tsaur	1988	2
14	Monolithic GaAs/Si Integration MRS Proceedings ·G. W. Turner,H. K. Choi,J.P. Mattia,Feifei Ran,Stephen Eglash,B-Y. Tsaur	1988	6
15	Metallic and atomic approximations at the Schottky barrier interfaces Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ·W. E. Spicer,Shihui Pan,D. Mo,N. Newman,P. H. Mahowald,T. Kendelewicz,Stephen Eglash	1984	21
16	Barrier heights from ohmic to bandgap: Modified Al:GaAs Schottky diodes by MBE Stephen Eglash,N. Newman,Daisy Pelletier,W. E. Spicer,D. M. Collins,J. A. Betbese	1983	3
17	Reply to “surface photovoltage measurements and Fermi level pinning: comments on ‘development and confirmation of the unified model for Schottky barrier formation and MOS interface states on III-V compounds’” Thin Solid Films ·Stephen Eglash,W. E. Spicer,I. Lindau	1982	6
18	IVB-10 engineered Al - GaAs Schottky barrier heights by MBE IEEE Transactions on Electron Devices ·Stephen Eglash,Pieter D. H. Prins,W. E. Spicer,D. M. Collins	1982	2
19	Effect of low-intensity laser radiation during oxidation of the GaAs(110) surface Journal of Vacuum Science and Technology ·W Petro,Isao Hino,Stephen Eglash,I. Lindau,Chung‐Yi Su,W. E. Spicer	1982	43
20	New considerations of 3-5 MOS and other device considerations W. E. Spicer,I. Lindau,Stephen Eglash,W Petro,Perry Skeath,Cheng‐Yong Su	1981	1

About Stephen Eglash

Stephen Eglash is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Surfaces, Coatings and Films, Spectroscopy and Condensed Matter Physics, having authored 42 papers that have together received 1.6k indexed citations. Recurring topics across this work include Semiconductor Quantum Structures and Devices (31 papers), Semiconductor materials and interfaces (15 papers), Semiconductor materials and devices (14 papers), Semiconductor Lasers and Optical Devices (13 papers), Advanced Semiconductor Detectors and Materials (10 papers), Spectroscopy and Laser Applications (6 papers), Electron and X-Ray Spectroscopy Techniques (4 papers) and GaN-based semiconductor devices and materials (4 papers). The work is most often cited by research in Atomic and Molecular Physics, and Optics (1.4k citations), Spectroscopy (371 citations), Electrical and Electronic Engineering (1.3k citations), Surfaces, Coatings and Films (57 citations) and Condensed Matter Physics (85 citations). Stephen Eglash has collaborated with scholars based in United States and Russia. Frequent co-authors include Lawrence C. West, H. K. Choi, G. W. Turner, W. E. Spicer, E. R. Brown, I. Lindau, N. Newman, Shihui Pan, Ching‐Yuan Su and Perry Skeath. Their work appears in journals such as Applied Physics Letters, Journal of Applied Physics, Journal of Crystal Growth, Thin Solid Films and IEEE Transactions on Electron Devices.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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