P. H. Mahowald

884 total citations
26 papers, 737 citations indexed

About

P. H. Mahowald is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Surfaces, Coatings and Films. According to data from OpenAlex, P. H. Mahowald has authored 26 papers receiving a total of 737 indexed citations (citations by other indexed papers that have themselves been cited), including 22 papers in Atomic and Molecular Physics, and Optics, 13 papers in Electrical and Electronic Engineering and 11 papers in Surfaces, Coatings and Films. Recurrent topics in P. H. Mahowald's work include Semiconductor materials and interfaces (15 papers), Semiconductor materials and devices (12 papers) and Electron and X-Ray Spectroscopy Techniques (11 papers). P. H. Mahowald is often cited by papers focused on Semiconductor materials and interfaces (15 papers), Semiconductor materials and devices (12 papers) and Electron and X-Ray Spectroscopy Techniques (11 papers). P. H. Mahowald collaborates with scholars based in United States. P. H. Mahowald's co-authors include I. Lindau, W. E. Spicer, T. Kendelewicz, C. E. McCants, N. Newman, R. Cao, K. E. Miyano, Z. Liliental‐Weber, E. R. Weber and K. A. Bertness and has published in prestigious journals such as Physical review. B, Condensed matter, Surface Science and Applied Physics A.

In The Last Decade

P. H. Mahowald

24 papers receiving 700 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
P. H. Mahowald United States 12 558 489 208 166 78 26 737
R. Cao United States 14 549 1.0× 621 1.3× 169 0.8× 166 1.0× 89 1.1× 37 812
Hirohiko Sugahara Japan 12 509 0.9× 445 0.9× 133 0.6× 140 0.8× 71 0.9× 27 646
C. E. McCants United States 12 480 0.9× 471 1.0× 132 0.6× 115 0.7× 64 0.8× 21 623
Jia-Fa Fan Japan 8 607 1.1× 536 1.1× 118 0.6× 215 1.3× 93 1.2× 13 752
M. Alonso Spain 12 367 0.7× 411 0.8× 197 0.9× 192 1.2× 71 0.9× 40 636
M. del Giudice United States 15 267 0.5× 465 1.0× 257 1.2× 182 1.1× 90 1.2× 28 660
R. E. Viturro United States 18 460 0.8× 527 1.1× 209 1.0× 165 1.0× 88 1.1× 42 713
G.M. Guichar France 17 277 0.5× 474 1.0× 306 1.5× 149 0.9× 110 1.4× 23 667
Keung L. Luke United States 12 416 0.7× 302 0.6× 102 0.5× 119 0.7× 64 0.8× 27 527
Satoshi Maeyama Japan 12 315 0.6× 282 0.6× 164 0.8× 136 0.8× 46 0.6× 52 501

Countries citing papers authored by P. H. Mahowald

Since Specialization
Citations

This map shows the geographic impact of P. H. Mahowald's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by P. H. Mahowald with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites P. H. Mahowald more than expected).

Fields of papers citing papers by P. H. Mahowald

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by P. H. Mahowald. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by P. H. Mahowald. The network helps show where P. H. Mahowald may publish in the future.

Co-authorship network of co-authors of P. H. Mahowald

This figure shows the co-authorship network connecting the top 25 collaborators of P. H. Mahowald. A scholar is included among the top collaborators of P. H. Mahowald based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with P. H. Mahowald. P. H. Mahowald is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Ardehali, M., P. H. Mahowald, & I. Lindau. (1989). Electronic structure of the Ag/Si interface: Angle-resolved, energy-dependent, photoemission study. Physical review. B, Condensed matter. 39(12). 8107–8114. 3 indexed citations
2.
Bertness, K. A., J. J. Yeh, D. J. Friedman, et al.. (1988). Growth structure of chemisorbed oxygen on GaAs(110) and InP(110) surfaces. Physical review. B, Condensed matter. 38(8). 5406–5421. 53 indexed citations
3.
Bertness, K. A., P. H. Mahowald, C. E. McCants, et al.. (1988). Photoenhancement mechanism for oxygen chemisorption on GaAs(110) using visible light. Applied Physics A. 47(3). 219–228. 19 indexed citations
4.
McCants, C. E., T. Kendelewicz, P. H. Mahowald, et al.. (1988). Chemical and electrical properties at the annealed Ti/GaAs(110) interface. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 6(3). 1466–1472. 11 indexed citations
5.
Mahowald, P. H. & W. E. Spicer. (1988). Fermi-level pinning and heavily doped overlayers. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 6(3). 1539–1542. 6 indexed citations
6.
Miyano, K. E., R. Cao, T. Kendelewicz, et al.. (1988). A substrate doping variation study of the pinning states at metal/GaAs(110) interfaces. Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena. 6(4). 1403–1408. 6 indexed citations
7.
McCants, C. E., Tom Kendelewicz, K. A. Bertness, et al.. (1987). Chemical and electronic properties of the Pt/GaAs(110) interface. Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena. 5(4). 1068–1074. 13 indexed citations
8.
Mahowald, P. H., et al.. (1987). Computer program for photoemission data analysis and display. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 5(5). 2982–2985. 74 indexed citations
9.
Bertness, K. A., C. E. McCants, P. H. Mahowald, et al.. (1987). Comparative uptake kinetics of N2O and O2 chemisorption on GaAs(110). Surface Science. 185(3). 544–558. 18 indexed citations
10.
List, R. S., et al.. (1987). The Si/GaAs(110) heterojunction discontinuity: Amorphous versus crystalline overlayers. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 5(4). 1459–1463. 8 indexed citations
11.
Kendelewicz, Tom, et al.. (1987). Chemical reaction and Schottky barrier formation at the Ti/InP(110) and Sn/InP(110) interfaces: Reactive versus nonreactive cases. Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena. 5(4). 1033–1038. 5 indexed citations
12.
Mahowald, P. H., Tom Kendelewicz, K. A. Bertness, et al.. (1987). Valence-band discontinuity at the Ge/InP(110) interface. Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena. 5(4). 1258–1262. 4 indexed citations
13.
List, R. S., et al.. (1986). The Si/GaAs(110) heterojunction. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 4(3). 1391–1395. 8 indexed citations
14.
Bertness, K. A., et al.. (1986). Oxygen chemisorption on GaAs(110): Surface or subsurface growth?. Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena. 4(4). 1102–1108. 15 indexed citations
15.
Mahowald, P. H., et al.. (1986). Si/InP(110) heterojunction. Physical review. B, Condensed matter. 34(10). 7069–7075. 5 indexed citations
16.
Katnani, A. D., et al.. (1985). Effect of an Al interlayer on the GaAs/Ge(100) heterojunction formation. Physical review. B, Condensed matter. 32(6). 4071–4076. 11 indexed citations
17.
Chin, Ken K., Shihui Pan, D. Mo, et al.. (1985). Electronic structure and Schottky-barrier formation of Ag onn-type GaAs(110). Physical review. B, Condensed matter. 32(2). 918–923. 28 indexed citations
18.
Mahowald, P. H., R. S. List, W. E. Spicer, J. C. Woicik, & P. Pianetta. (1985). Heterojunction band discontinuity at the Si–Ge(111) interface. Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena. 3(4). 1252–1255. 28 indexed citations
19.
Eglash, Stephen, M. D. Williams, P. H. Mahowald, et al.. (1984). Aluminum Schottky barrier formation on arsenic capped and heat cleaned MBE GaAs(100). Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena. 2(3). 481–485. 14 indexed citations
20.
Spicer, W. E., Shihui Pan, D. Mo, et al.. (1984). Metallic and atomic approximations at the Schottky barrier interfaces. Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena. 2(3). 476–480. 21 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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