Salvatore Bellone

979 citations

61 papers · 787 indexed · h-index 18

Co-authors: Luigi Di Benedetto Gian Domenico Licciardo Francesco G. Della Corte Alfredo Rubino P. Spirito H. C. Neitzert F. Pezzimenti Roberta Nipoti
Topics: Silicon Carbide Semiconductor Technologies (35 papers)Advancements in Semiconductor Devices and Circuit Design (30 papers)Semiconductor materials and devices (23 papers)
Cited by: Electrical and Electronic Engineering Polymers and Plastics Atomic and Molecular Physics, and Optics
Journals: Journal of Applied Physics Macromolecules IEEE Transactions on Power Electronics
Partner nations: Italy Germany United States

In The Last Decade

Salvatore Bellone

59 papers receiving 776 citations

Peers

Countries citing papers authored by Salvatore Bellone

Since Specialization

Citations

This map shows the geographic impact of Salvatore Bellone's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Salvatore Bellone with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Salvatore Bellone more than expected).

Fields of papers citing papers by Salvatore Bellone

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Salvatore Bellone. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Salvatore Bellone. The network helps show where Salvatore Bellone may publish in the future.

Co-authorship network of co-authors of Salvatore Bellone

This figure shows the co-authorship network connecting the top 25 collaborators of Salvatore Bellone. A scholar is included among the top collaborators of Salvatore Bellone based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Salvatore Bellone. Salvatore Bellone is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Analytical Model and Design of 4H-SiC Planar and Trenched JBS Diodes 2016 ·IEEE Transactions on Electron Devices ·Luigi Di Benedetto,Gian Domenico Licciardo,Tobias Erlbacher,Anton J. Bauer,Salvatore Bellone	26
2	Analytical Model of the Forward Operation of 4H-SiC Vertical DMOSFET in the Safe Operating Temperature Range 2014 ·IEEE Transactions on Power Electronics ·Gian Domenico Licciardo,Salvatore Bellone,Luigi Di Benedetto	31
3	A Quasi-One-Dimensional Model of the Potential Barrier and Carrier Density in the Channel of Si and 4H-SiC BSITs 2012 ·IEEE Transactions on Electron Devices ·Salvatore Bellone,Luigi Di Benedetto,Gian Domenico Licciardo	13
4	A model of the voltage barrier in the channel of 4H-SiC normally-off JFET's 2012 ·Luigi Di Benedetto,Salvatore Bellone	4
5	A self-consistent model of the static and switching behaviour of 4H-SiC diodes 2010 ·Salvatore Bellone,Francesco G. Della Corte,Luigi Di Benedetto,(unknown),Gian Domenico Licciardo	5
6	A Self-Consistent Model of the OCVD Behavior of Si and 4H-SiC $\hbox{p}^{+}\hbox{-n-n}^{+}$ Diodes 2009 ·IEEE Transactions on Electron Devices ·Salvatore Bellone,(unknown),Gian Domenico Licciardo	14
7	Switching Device Based on a Thin Film of an Azo-Containing Polymer for Application in Memory Cells 2008 ·IEEE Electron Device Letters ·(unknown),(unknown),Paolo Vacca,Simona Concilio,Pio Iannelli,Alfredo Rubino,Salvatore Bellone	32
8	An Analytical Model of an OCVD-Based Measurement Technique of the Local Carrier Lifetime 2007 ·IEEE Transactions on Electron Devices ·Salvatore Bellone,Gian Domenico Licciardo,(unknown),Alfredo Rubino	5
9	Modelling and characterisation of the OCVD response at an arbitrary time and injection level 2004 ·Solid-State Electronics ·Salvatore Bellone,H. C. Neitzert,Gian Domenico Licciardo	13
10	Synthesis and Characterization of a New Class of Nematic Photoluminescent Oxadiazole-Containing Polyethers 2003 ·Macromolecules ·Domenico Acierno,Eugenio Amendola,Salvatore Bellone,Simona Concilio,Pio Iannelli,H. C. Neitzert,Alfredo Rubino,Fulvia Villani	28
11	A new test structure for in-depth lifetime profiling of thin Si epitaxial layers 2003 ·P. Spirito,Salvatore Bellone,C. Ransom,G. Busatto,G. Cocorullo	1
12	Modelling and characterisation of the input I–V curves of bipolar JFET structures showing a negative resistance behaviour 2001 ·Solid-State Electronics ·Salvatore Bellone,Santolo Daliento,A. Sanseverino	3
13	A measurement method of the ideal I–V characteristics of diodes up to the built-in voltage limit 1999 ·Solid-State Electronics ·Salvatore Bellone,Santolo Daliento,A. Sanseverino	6
14	Test structure design for the evaluation of carrier-carrier scattering effect on hole and electron mobilities 1997 ·IEEE Transactions on Semiconductor Manufacturing ·G.V. Persiano,Salvatore Bellone	2
15	A two-dimensional analytical model of homojunction GaAs BMFET structures 1996 ·Solid-State Electronics ·Salvatore Bellone,N. Rinaldi,Gianpaolo Vitale,G. Cocorullo,(unknown),H.L. Hartnagel	6
16	Analytical model of the effective recombination velocity of diffused p−p+ (n−n+) high-low junctions at arbitrary injection level 1994 ·Solid-State Electronics ·Salvatore Bellone,(unknown)	5
17	Recombination measurement of n-type heavily doped layer in high/low silicon junctions 1991 ·IEEE Transactions on Electron Devices ·Salvatore Bellone,G. Busatto,C. Ransom	6
18	A new test structure for recombination measurements in thin si layers for VLSI structures 1990 ·European Transactions on Telecommunications ·Salvatore Bellone,P. Spirito	4
19	Recombination lifetime profiling in very thin Si epitaxial layers used for bipolar VLSI 1989 ·IEEE Electron Device Letters ·P. Spirito,Salvatore Bellone,C. Ransom,G. Busatto,G. Cocorullo	7
20	An analysis of thermal behavior of bipolar-mode JFET's 1983 ·IEEE Electron Device Letters ·Salvatore Bellone,(unknown),(unknown),P. Spirito,Gianpaolo Vitale	7

About Salvatore Bellone

Salvatore Bellone is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Polymers and Plastics, having authored 61 papers that have together received 787 indexed citations. Recurring topics across this work include Silicon Carbide Semiconductor Technologies (35 papers), Advancements in Semiconductor Devices and Circuit Design (30 papers) and Semiconductor materials and devices (23 papers). The work is most often cited by research in Electrical and Electronic Engineering (732 citations), Polymers and Plastics (98 citations) and Atomic and Molecular Physics, and Optics (186 citations). Salvatore Bellone has collaborated with scholars based in Italy, Germany and United States. Frequent co-authors include Luigi Di Benedetto, Gian Domenico Licciardo, Francesco G. Della Corte, Alfredo Rubino, P. Spirito, H. C. Neitzert, F. Pezzimenti, Roberta Nipoti, Pio Iannelli and Simona Concilio. Their work appears in journals such as Journal of Applied Physics, Macromolecules and IEEE Transactions on Power Electronics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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