N. Rinaldi

2.2k total citations
123 papers, 1.8k citations indexed

About

N. Rinaldi is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, N. Rinaldi has authored 123 papers receiving a total of 1.8k indexed citations (citations by other indexed papers that have themselves been cited), including 114 papers in Electrical and Electronic Engineering, 24 papers in Atomic and Molecular Physics, and Optics and 20 papers in Materials Chemistry. Recurrent topics in N. Rinaldi's work include Advancements in Semiconductor Devices and Circuit Design (84 papers), Silicon Carbide Semiconductor Technologies (59 papers) and Semiconductor materials and devices (38 papers). N. Rinaldi is often cited by papers focused on Advancements in Semiconductor Devices and Circuit Design (84 papers), Silicon Carbide Semiconductor Technologies (59 papers) and Semiconductor materials and devices (38 papers). N. Rinaldi collaborates with scholars based in Italy, Netherlands and Germany. N. Rinaldi's co-authors include Vincenzo d’Alessandro, Alessandro Magnani, Lorenzo Codecasa, Giovanni Breglio, Lis K. Nanver, P. Spirito, P.J. Zampardi, L. La Spina, Salvatore Russo and N. Nenadović and has published in prestigious journals such as IEEE Transactions on Electron Devices, Schizophrenia Research and Electronics Letters.

In The Last Decade

N. Rinaldi

122 papers receiving 1.7k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
N. Rinaldi Italy 24 1.5k 289 257 213 204 123 1.8k
V. Székely Hungary 16 992 0.6× 207 0.7× 281 1.1× 37 0.2× 117 0.6× 57 1.2k
Shuji Nakamura Japan 15 239 0.2× 175 0.6× 79 0.3× 126 0.6× 559 2.7× 56 759
P.J. Zampardi United States 18 982 0.6× 61 0.2× 68 0.3× 38 0.2× 212 1.0× 115 1.1k
Guangyao Li Australia 16 252 0.2× 249 0.9× 83 0.3× 106 0.5× 466 2.3× 59 841
James Christofferson United States 16 294 0.2× 445 1.5× 58 0.2× 38 0.2× 152 0.7× 48 743
J.L. Prince United States 21 1.7k 1.1× 53 0.2× 58 0.2× 38 0.2× 407 2.0× 143 1.8k
Ruth V. Sabariego Belgium 14 657 0.4× 26 0.1× 277 1.1× 55 0.3× 145 0.7× 129 887
U. Ghoshal United States 13 275 0.2× 207 0.7× 178 0.7× 41 0.2× 80 0.4× 41 622
Frédéric Bouillault France 18 667 0.4× 93 0.3× 336 1.3× 13 0.1× 135 0.7× 103 1.1k
André Nicolet France 19 582 0.4× 37 0.1× 158 0.6× 50 0.2× 420 2.1× 67 974

Countries citing papers authored by N. Rinaldi

Since Specialization
Citations

This map shows the geographic impact of N. Rinaldi's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by N. Rinaldi with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites N. Rinaldi more than expected).

Fields of papers citing papers by N. Rinaldi

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by N. Rinaldi. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by N. Rinaldi. The network helps show where N. Rinaldi may publish in the future.

Co-authorship network of co-authors of N. Rinaldi

This figure shows the co-authorship network connecting the top 25 collaborators of N. Rinaldi. A scholar is included among the top collaborators of N. Rinaldi based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with N. Rinaldi. N. Rinaldi is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
d’Alessandro, Vincenzo, et al.. (2018). Analysis of Electrothermal and Impact-Ionization Effects in Bipolar Cascode Amplifiers. IEEE Transactions on Electron Devices. 65(2). 431–439. 8 indexed citations
2.
Codecasa, Lorenzo, Robin Bornoff, J. Dyson, et al.. (2018). Versatile MOR-based boundary condition independent compact thermal models with multiple heat sources. Microelectronics Reliability. 87. 194–205. 15 indexed citations
3.
Codecasa, Lorenzo, Eric Monier-Vinard, Olivier Daniel, et al.. (2018). Multi-port dynamic compact thermal models of dual-chip package using model order reduction and metaheuristic optimization. Microelectronics Reliability. 87. 222–231. 19 indexed citations
4.
d’Alessandro, Vincenzo, Antonio Pio Catalano, Alessandro Magnani, et al.. (2017). Simulation comparison of InGaP/GaAs HBT thermal performance in wire-bonding and flip-chip technologies. Microelectronics Reliability. 78. 233–242. 22 indexed citations
5.
Catalano, Antonio Pio, Alessandro Magnani, Vincenzo d’Alessandro, et al.. (2017). Influence of layout and technology parameters on the thermal behavior of InGaP/GaAs HBTs. Virtual Community of Pathological Anatomy (University of Castilla La Mancha). 233–236. 12 indexed citations
6.
d’Alessandro, Vincenzo, Alessandro Magnani, Lorenzo Codecasa, N. Rinaldi, & Klaus Aufinger. (2016). Advanced thermal simulation of SiGe:C HBTs including back-end-of-line. Microelectronics Reliability. 67. 38–45. 17 indexed citations
7.
d’Alessandro, Vincenzo, et al.. (2016). Experimental DC Extraction of the Base Resistance of Bipolar Transistors: Application to SiGe:C HBTs. IEEE Transactions on Electron Devices. 63(7). 2691–2699. 8 indexed citations
8.
Magnani, Alessandro, et al.. (2015). Advanced thermal resistance simulation of SiGe HBTs including backend cooling effect. Virtual Community of Pathological Anatomy (University of Castilla La Mancha). 1–5. 3 indexed citations
9.
Codecasa, Lorenzo, Vincenzo d’Alessandro, Alessandro Magnani, & N. Rinaldi. (2014). Compact Dynamic Modeling for Fast Simulation of Nonlinear Heat Conduction in Ultra-Thin Chip Stacking Technology. IEEE Transactions on Components Packaging and Manufacturing Technology. 4(11). 1785–1795. 37 indexed citations
10.
Metzger, A., Vincenzo d’Alessandro, N. Rinaldi, & P.J. Zampardi. (2013). Evaluation of thermal balancing techniques in InGaP/GaAs HBT power arrays for wireless handset power amplifiers. Microelectronics Reliability. 53(9-11). 1471–1475. 11 indexed citations
11.
Rinaldi, N., et al.. (2011). Physical and Electrical Performance Limits of High-Speed Si GeC HBTs—Part II: Lateral Scaling. IEEE Transactions on Electron Devices. 58(11). 3697–3706. 36 indexed citations
12.
Rinaldi, N., et al.. (2004). Optimizing the numerical procedure of temperature evaluating from the heat diffusion equation. International Conference on Modern Problems of Radio Engineering, Telecommunications and Computer Science. 526–528. 1 indexed citations
13.
Nenadović, N., et al.. (2004). Modeling of thermal resistance dependence on design parameters in silicon-on-glass bipolar transistors. 1. 257–260. 2 indexed citations
14.
15.
Rinaldi, N.. (2000). Thermal analysis of solid-state devices and circuits: an analytical approach. Solid-State Electronics. 44(10). 1789–1798. 50 indexed citations
16.
Rinaldi, N.. (1999). A simple analytical model of thermal oxidation of silicon. Solid-State Electronics. 43(2). 409–411. 1 indexed citations
17.
Rinaldi, N.. (1997). On the modeling of polysilicon emitter bipolar transistors. IEEE Transactions on Electron Devices. 44(3). 395–403. 21 indexed citations
18.
Rinaldi, N.. (1995). All-Injection Modeling of Collector Current and Transit Time in SiGe Bipolar Transistors. European Solid-State Device Research Conference. 785–788. 3 indexed citations
19.
Rinaldi, N.. (1995). Validity range estimate of the asymptotic expansion approach for the modeling of minority-carrier injection into heavily doped emitters. IEEE Transactions on Electron Devices. 42(5). 1011–1013. 3 indexed citations
20.
Daliento, Santolo, N. Rinaldi, A. Sanseverino, & P. Spirito. (1995). Two-dimensional analysis of a test structure for lifetime profile measurements. IEEE Transactions on Electron Devices. 42(11). 1924–1928. 7 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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