B.A. Joyce

8.0k total citations · 2 hit papers
116 papers, 6.1k citations indexed

About

B.A. Joyce is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Materials Chemistry. According to data from OpenAlex, B.A. Joyce has authored 116 papers receiving a total of 6.1k indexed citations (citations by other indexed papers that have themselves been cited), including 90 papers in Atomic and Molecular Physics, and Optics, 65 papers in Electrical and Electronic Engineering and 27 papers in Materials Chemistry. Recurrent topics in B.A. Joyce's work include Semiconductor Quantum Structures and Devices (61 papers), Semiconductor materials and devices (38 papers) and Surface and Thin Film Phenomena (28 papers). B.A. Joyce is often cited by papers focused on Semiconductor Quantum Structures and Devices (61 papers), Semiconductor materials and devices (38 papers) and Surface and Thin Film Phenomena (28 papers). B.A. Joyce collaborates with scholars based in United Kingdom, Finland and Netherlands. B.A. Joyce's co-authors include J.H. Neave, Peter J. Dobson, C. T. Foxon, Nicholas G. Norton, Jing Zhang, J. J. Harris, P.K. Larsen, Dimitri D. Vvedensky, C. E. C. Wood and John A. Harvey and has published in prestigious journals such as Physical Review Letters, Physical review. B, Condensed matter and Applied Physics Letters.

In The Last Decade

B.A. Joyce

115 papers receiving 5.7k citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Dynamics of film growth of GaAs by MBE from Rheed observations

1983 734 citations J.H. Neave, B.A. Joyce et al. Applied Physics A profile →
Reflection high-energy electron diffraction oscillations from vicinal surfaces—a new approach to surface diffusion measurements

1985 614 citations J.H. Neave, Peter J. Dobson et al. Applied Physics Letters profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
B.A. Joyce United Kingdom	37	4.5k	3.3k	1.9k	1.1k	948	116	6.1k
J.H. Neave United Kingdom	36	3.6k 0.8×	2.4k 0.7×	1.4k 0.7×	1.1k 1.0×	820 0.9×	111	4.8k
M. Henzler Germany	42	4.3k 1.0×	2.3k 0.7×	1.9k 1.0×	1.3k 1.2×	654 0.7×	165	6.1k
Thomas Fauster Germany	46	4.4k 1.0×	2.0k 0.6×	2.1k 1.1×	1.5k 1.4×	546 0.6×	160	6.1k
E. Bauer United States	36	3.5k 0.8×	1.6k 0.5×	2.0k 1.0×	1.3k 1.1×	773 0.8×	121	5.5k
M. G. Lagally United States	33	2.6k 0.6×	1.4k 0.4×	896 0.5×	612 0.5×	604 0.6×	97	3.7k
W. F. Egelhoff United States	43	4.5k 1.0×	1.8k 0.6×	2.2k 1.1×	1.1k 1.0×	1.2k 1.2×	193	6.2k
D. E. Jesson United States	30	1.8k 0.4×	1.6k 0.5×	1.6k 0.9×	702 0.6×	605 0.6×	110	4.0k
Y. W. Mo United States	19	3.2k 0.7×	1.8k 0.5×	1.0k 0.5×	317 0.3×	424 0.4×	39	3.9k
P. I. Cohen United States	28	1.8k 0.4×	1.1k 0.3×	988 0.5×	675 0.6×	752 0.8×	88	3.0k
Shozo Ino Japan	30	2.2k 0.5×	762 0.2×	1.3k 0.7×	932 0.8×	477 0.5×	80	3.6k

Countries citing papers authored by B.A. Joyce

Since Specialization

Citations

This map shows the geographic impact of B.A. Joyce's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by B.A. Joyce with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites B.A. Joyce more than expected).

Fields of papers citing papers by B.A. Joyce

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by B.A. Joyce. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by B.A. Joyce. The network helps show where B.A. Joyce may publish in the future.

Co-authorship network of co-authors of B.A. Joyce

This figure shows the co-authorship network connecting the top 25 collaborators of B.A. Joyce. A scholar is included among the top collaborators of B.A. Joyce based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with B.A. Joyce. B.A. Joyce is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

Miura, Makoto, J. Hartmann, Junqiu Zhang, B.A. Joyce, & Y. Shiraki. (2000). Formation process and ordering of self-assembled Ge islands. Thin Solid Films. 369(1-2). 104–107. 14 indexed citations

Tok, Eng Soon, J.H. Neave, J. Zhang, B.A. Joyce, & T.S. Jones. (1997). Arsenic incorporation kinetics in GaAs(001) homoepitaxy revisited. Surface Science. 374(1-3). 397–405. 72 indexed citations

Tok, E. S., J.H. Neave, M.R. Fahy, et al.. (1997). Influence of arsenic incorporation on surface morphology and Si doping in GaAs(110) homoepitaxy. Microelectronics Journal. 28(8-10). 833–839. 11 indexed citations

Hart, L., et al.. (1994). Room temperature photoluminescence in the 1 μm region from InAs monolayer structures. Journal of Applied Physics. 75(12). 8066–8070. 3 indexed citations

Dawson, P., et al.. (1993). Optical studies of the growth of single monolayer wide InAs quantum wells on GaAs by MBE. Journal of Crystal Growth. 127(1-4). 579–583. 11 indexed citations

Shitara, T., Dimitri D. Vvedensky, Mark Richard Wilby, et al.. (1992). Morphological model of reflection high-energy electron-diffraction intensity oscillations during epitaxial growth on GaAs(001). Applied Physics Letters. 60(12). 1504–1506. 47 indexed citations

Yuen, Peter, et al.. (1991). The growth and electronic properties of α-Sn thin films grown on InSb(100) and () substrates by molecular beam epitaxy (MBE). Journal of Crystal Growth. 111(1-4). 943–947. 5 indexed citations

Oliveira, Admilton Gonçalves de, S.D. Parker, R. Droopad, & B.A. Joyce. (1990). A generalized model for the reconstruction of {001} surfaces of III–V compound semiconductors based on a RHEED study of InSb(001). Surface Science. 227(1-2). 150–156. 25 indexed citations

Foxon, C. T., et al.. (1990). Gallium desorption from GaAs and (Al,Ga)As during molecular beam epitaxy growth at high temperatures. Applied Physics Letters. 57(12). 1203–1205. 34 indexed citations

10.

Yuen, Peter, et al.. (1990). RHEED studies of the surface morphology of α-Sn pseudomorphically grown on InSb(100) by MBE-a new kind of non-polar/polar system. Semiconductor Science and Technology. 5(5). 373–384. 17 indexed citations

11.

Joyce, B.A., Jianping Zhang, J.H. Neave, & Peter J. Dobson. (1988). The application of RHEED intensity effects to interrupted growth and interface formation during MBE growth of GaAs/(Al, Ga)As structures. Applied Physics A. 45(3). 255–260. 23 indexed citations

12.

Egdell, R.G., et al.. (1987). Application of high-resolution electron-energy-loss spectroscopy to MBE grown GaAs(100). Surface Science. 186(3). 482–498. 49 indexed citations

13.

Egdell, R.G., et al.. (1987). Surface and interface phonon and plasmon excitations in iii-v semiconductor materials. Journal of Electron Spectroscopy and Related Phenomena. 45. 177–187. 17 indexed citations

14.

Pond, R.C., J. P. Gowers, & B.A. Joyce. (1985). Surface structure and the origin of antisite domains in GaAs:Ge epitaxial films. Surface Science. 152-153. 1191–1196. 16 indexed citations

15.

Pond, R.C., J. P. Gowers, D. B. Holt, et al.. (1983). A General Treatment of Antiphase Domain Formation and Identification at Polar-Nonpolar Semiconductor Interfaces.. MRS Proceedings. 25. 7 indexed citations

16.

Joyce, B.A.. (1979). Present status and future directions for MBE. Surface Science. 86. 92–101. 5 indexed citations

17.

Foxon, C. T. & B.A. Joyce. (1977). Interaction kinetics of As2 and Ga on {100} GaAs surfaces. Surface Science. 64(1). 293–304. 256 indexed citations

18.

Joyce, B.A. & C. T. Foxon. (1977). Invited: Growth and Doping Kinetics in Molecular Beam Epitaxy. Japanese Journal of Applied Physics. 16(S1). 17–17. 18 indexed citations

19.

Foxon, C. T., et al.. (1974). Evaluation of surface kinetic data by the transform analysis of modulated molecular beam measurements. Surface Science. 44(1). 69–92. 115 indexed citations

20.

Joyce, B.A., et al.. (1965). Impurity Redistribution Processes in Epitaxial Silicon Layers. Journal of The Electrochemical Society. 112(11). 1100–1100. 12 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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