Ryusuke Nebashi

1000 citations

50 papers · 762 indexed · h-index 12

Impact in

Hardware and Architecture top 5%
Electrical and Electronic Engineering top 10%
- Advanced Memory and Neural Computing
- Ferroelectric and Negative Capacitance Devices
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Energy Harvesting in Wireless Networks

Papers in

Electrical and Electronic Engineering 45
- Advanced Memory and Neural Computing 27
- Ferroelectric and Negative Capacitance Devices 19
- Semiconductor materials and devices 19
- Advancements in Semiconductor Devices and Circuit Design 7
- Low-power high-performance VLSI design 3
Hardware and Architecture 5

Co-authors: Tadahiko Sugibayashi Noboru Sakimura N. Kasai H. Honjo S. Miura Hideo Ohno Y. Tsuji Takahiro Hanyu
Journals: Japanese Journal of Applied Physics (7 papers)Journal of Applied Physics (7 papers)IEEE Journal of Solid-State Circuits (3 papers)IEEE Transactions on Magnetics (3 papers)IEEE Micro (1 paper)
Partner nations: Japan United States South Korea

In The Last Decade

Ryusuke Nebashi

48 papers receiving 742 citations

Peers

Countries citing papers authored by Ryusuke Nebashi

Since Specialization

Citations

This map shows the geographic impact of Ryusuke Nebashi's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Ryusuke Nebashi with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Ryusuke Nebashi more than expected).

Fields of papers citing papers by Ryusuke Nebashi

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Ryusuke Nebashi. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Ryusuke Nebashi. The network helps show where Ryusuke Nebashi may publish in the future.

Co-authors

The 25 scholars most cited alongside Ryusuke Nebashi, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Ryusuke Nebashi Line = papers co-authored together Ryusuke Nebashi links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	A 0.11pJ/bit Read Energy Embedded NanoBridge NVM and its Integration in a 28nm 32-bit RISC-V MCU Е.В. Лесных, Ryusuke Nebashi, Sawaki Miho, Paula Arriagada, Koichiro Okamoto, Hideaki Numata, Noriyuki Iguchi, Toshitsugu Sakamoto, Munehiro Tada	2023	1
2	A 0.11pJ/bit read energy embedded NanoBridge non-volatile memory and its integration in a 28 nm 32 bit RISC-V microcontroller units Japanese Journal of Applied Physics ·Е.В. Лесных, Ryusuke Nebashi, Sawaki Miho, Paula Arriagada, Koichiro Okamoto, Hideaki Numata, Noriyuki Iguchi, Toshitsugu Sakamoto, Munehiro Tada	2023	2
3	Via-Switch FPGA: 65-nm CMOS Implementation and Evaluation IEEE Journal of Solid-State Circuits ·Е.В. Лесных, Naoki Banno, Sawaki Miho, Ryusuke Nebashi, Koichiro Okamoto, Hideaki Numata, Noriyuki Iguchi, Masanori Hashimoto, Tadahiko Sugibayashi, Toshitsugu Sakamoto, Munehiro Tada	2021	4
4	3x Improved Set-voltage Variability of Cu Atom Switch with Split-electrode for Very Large Scale Integration Leonardo Correia Santana Decanio, M. Antony Robert Raj, Hideaki Numata, JOHN T. KELLER, M. Titcat, Ryusuke Nebashi, Chunhua Xiong, H. Hada, Tadahiko Sugibayashi, T. Sakamoto, Aurélie Métayer	2019	1
5	Three-fold improved set-voltage variability of a Cu atom switch with a split electrode for very-large-scale integration Japanese Journal of Applied Physics ·Naoki Banno, Koichiro Okamoto, Hideaki Numata, Noriyuki Iguchi, M. Titcat, Ryusuke Nebashi, Xu Bai, H. Hada, Tadahiko Sugibayashi, Toshitsugu Sakamoto, Munehiro Tada	2019	2
6	An atom-switch-based field-programmable gate array with optimized driving capability buffer Japanese Journal of Applied Physics ·Е.В. Лесных, Sawaki Miho, Ryusuke Nebashi, A. Morioka, Naoki Banno, Koichiro Okamoto, Hideaki Numata, H. Hada, Tadahiko Sugibayashi, Toshitsugu Sakamoto, Munehiro Tada	2019	1
7	A low-power Cu atom switch programmable logic fabricated in a 40nm-node CMOS technology Е.В. Лесных, Toshitsugu Sakamoto, Munehiro Tada, Miharu Miyamura, Y. Tsuji, A. Morioka, Ryusuke Nebashi, Naoki Banno, K. Okamoto, Hedvig M C D Landenius Enegren, Retor Aw Kaligis, Tadahiko Sugibayashi	2017	7
8	Architecture optimization of nanobridge-based field-programmable gate array and its evaluation Japanese Journal of Applied Physics ·Е.В. Лесных, Toshitsugu Sakamoto, Y. Tsuji, Sawaki Miho, A. Morioka, Ryusuke Nebashi, Munehiro Tada, Naoki Banno, Koichiro Okamoto, Noriyuki Iguchi, H. Hada, Tadahiko Sugibayashi	2017	2
9	Complementary 5T-4MTJ nonvolatile TCAM cell circuit with phase-selective parallel writing scheme IEICE Electronics Express ·Shoun Matsunaga, Akira Mochizuki, Noboru Sakimura, Ryusuke Nebashi, Tadahiko Sugibayashi, Tetsuo Endoh, Hideo Ohno, Takahiro Hanyu	2014	7
10	Analysis of single-event upset of magnetic tunnel junction used in spintronic circuits caused by radiation-induced current Journal of Applied Physics ·Noboru Sakimura, Ryusuke Nebashi, Masanori Natsui, Hideo Ohno, Tadahiko Sugibayashi, Takahiro Hanyu	2014	4
11	Fabrication of a 99%-Energy-Less Nonvolatile Multi-Functional CAM Chip Using Hierarchical Power Gating for a Massively-Parallel Full-Text-Search Engine Satoru Matsunaga, Noboru Sakimura, Ryusuke Nebashi, (unknown), (unknown), (unknown), (unknown), (unknown), (unknown), (unknown), (unknown), (unknown), (unknown), (unknown), (unknown), (unknown), (unknown)	2013	26
12	Nonvolatile logic-in-memory array processor in 90nm MTJ/MOS achieving 75% leakage reduction using cycle-based power gating Masanori Natsui, Daisuke Suzuki, Noboru Sakimura, Ryusuke Nebashi, Y. Tsuji, A. Morioka, Tadahiko Sugibayashi, S. Miura, H. Honjo, Keizo Kinoshita, Shoji Ikeda, Tetsuo Endoh, Hideo Ohno, Takahiro Hanyu	2013	55
13	Spintronics primitive gate with high error correction efficiency 6(P<inf>error</inf>)<sup>2</sup> for logic-in memory architecture Y. Tsuji, Ryusuke Nebashi, Noboru Sakimura, A. Morioka, H. Honjo, K. Tokutome, S. Miura, Tetsuya Suzuki, Shunsuke Fukami, K. Kinoshita, Takahiro Hanyu, Tetsuo Endoh, N. Kasai, Hideo Ohno, Tadahiko Sugibayashi	2012	11
14	Improvement of Thermal Stability of Magnetoresistive Random Access Memory Device with SiN Protective Film Deposited by High-Density Plasma Chemical Vapor Deposition Japanese Journal of Applied Physics ·Alessia Francone, Mona A. Allam, Hiroaki Utsumi, H. Honjo, Ryusuke Nebashi, Iwid Hidayah Putri, Norikazu Ohshima, Tadahiko Sugibayashi, H. Hada, Y. Shimomura, Yasmin Lima Backsmann, Masahiko Inoue, N. Kasai	2008	25
15	Nonvolatile Magnetic Flip-Flop for standby-power-free SoCs Noboru Sakimura, Tadahiko Sugibayashi, Ryusuke Nebashi, N. Kasai	2008	48
16	Performance of write-line inserted magnetic tunneling junction for low-write-current magnetic random access memory cell Journal of Applied Physics ·H. Honjo, Ryusuke Nebashi, T. Suzuki, Shunsuke Fukami, N. Ishiwata, Tadahiko Sugibayashi, N. Kasai	2008	9
17	Magnetic Properties and Writing Characteristics of Magnetic Clad Lines in Magnetoresistive Random Access Memory Devices Japanese Journal of Applied Physics ·Norikazu Ohshima, Kenichi Shimura, S. Miura, Tetsuhiro Suzuki, Ryusuke Nebashi, H. Hada	2008	9
18	Low Current Perpendicular Domain Wall Motion Cell for Scalable High-Speed MRAM Symposium on VLSI Technology ·Shunsuke Fukami, Tetsuya Suzuki, K. Nagahara, Norikazu Ohshima, G Flore, S. Saito, Ryusuke Nebashi, Noboru Sakimura, H. Honjo, K. Mori, Anita Mellmer, S. Miura, N. Ishiwata, Tadahiko Sugibayashi	2006	48
19	Magnetic and Writing Properties of Clad Lines Used in a Toggle MRAM IEEE Transactions on Magnetics ·Kei Shimura, Norikazu Ohshima, S. Miura, Ryusuke Nebashi, T. Suzuki, H. Hada, S. Tahara, H. Aikawa, Tetsuzo Ueda, T. Kajiyama, H. Yoda	2006	6
20	Toggling cell with four antiferromagnetically coupled ferromagnetic layers for high density MRAM with low switching current Tetsuya Suzuki, Yoshiyuki Fukumoto, K. Mori, H. Honjo, Ryusuke Nebashi, S. Miura, K. Nagahara, S. Saito, Hideaki Numata, Kunihiro Tsuji, Tadahiko Sugibayashi, H. Hada, N. Ishiwata, Agarwal Ir, S. Ikegawa, H. Yoda, S. Tahara	2005	7

About Ryusuke Nebashi

Ryusuke Nebashi is a scholar working on Electrical and Electronic Engineering, Hardware and Architecture, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials and Cellular and Molecular Neuroscience, having authored 50 papers that have together received 762 indexed citations. Recurring topics across this work include Advanced Memory and Neural Computing (27 papers), Magnetic properties of thin films (22 papers), Ferroelectric and Negative Capacitance Devices (19 papers), Semiconductor materials and devices (19 papers), Advancements in Semiconductor Devices and Circuit Design (7 papers), Magnetic Properties and Applications (5 papers), Low-power high-performance VLSI design (3 papers) and Neuroscience and Neural Engineering (3 papers). The work is most often cited by research in Hardware and Architecture (112 citations), Electrical and Electronic Engineering (644 citations), Atomic and Molecular Physics, and Optics (341 citations), Electronic, Optical and Magnetic Materials (67 citations) and Computer Networks and Communications (82 citations). Ryusuke Nebashi has collaborated with scholars based in Japan, United States and South Korea. Frequent co-authors include Tadahiko Sugibayashi, Noboru Sakimura, N. Kasai, H. Honjo, S. Miura, Hideo Ohno, Y. Tsuji, Takahiro Hanyu, Tetsuo Endoh and Shunsuke Fukami. Their work appears in journals such as Japanese Journal of Applied Physics, Journal of Applied Physics, IEEE Journal of Solid-State Circuits, IEEE Transactions on Magnetics and IEEE Micro.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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