H. Honjo

3.6k total citations · 1 hit paper
124 papers, 2.7k citations indexed

About

H. Honjo is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, H. Honjo has authored 124 papers receiving a total of 2.7k indexed citations (citations by other indexed papers that have themselves been cited), including 84 papers in Atomic and Molecular Physics, and Optics, 63 papers in Electrical and Electronic Engineering and 34 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in H. Honjo's work include Magnetic properties of thin films (84 papers), Advanced Memory and Neural Computing (34 papers) and Ferroelectric and Negative Capacitance Devices (29 papers). H. Honjo is often cited by papers focused on Magnetic properties of thin films (84 papers), Advanced Memory and Neural Computing (34 papers) and Ferroelectric and Negative Capacitance Devices (29 papers). H. Honjo collaborates with scholars based in Japan, United Kingdom and United States. H. Honjo's co-authors include Yasuji Sawada, Mitsugu Matsushita, Tetsuo Endoh, Masaki Sano, Y. Hayakawa, Shoji Ikeda, Hideo Ohno, S. Miura, I. Kodama and Takahiro Hanyu and has published in prestigious journals such as Physical Review Letters, The Journal of Chemical Physics and Applied Physics Letters.

In The Last Decade

H. Honjo

119 papers receiving 2.6k citations

Hit Papers

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What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Fractal Structures of Zinc Metal Leaves Grown by Electrodeposition

1984 585 citations H. Honjo et al. profile →

Peers

Countries citing papers authored by H. Honjo

Since Specialization

Citations

This map shows the geographic impact of H. Honjo's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by H. Honjo with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites H. Honjo more than expected).

Fields of papers citing papers by H. Honjo

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by H. Honjo. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by H. Honjo. The network helps show where H. Honjo may publish in the future.

Co-authorship network of co-authors of H. Honjo

This figure shows the co-authorship network connecting the top 25 collaborators of H. Honjo. A scholar is included among the top collaborators of H. Honjo based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with H. Honjo. H. Honjo is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Ultrafast spin–orbit torque-induced magnetization switching in a 75°-canted magnetic tunnel junction 2024 ·AIP Advances ·T. V. A. Nguyen, Hiroshi Naganuma, H. Honjo, Shoji Ikeda, Tetsuo Endoh	2
2	Influence of Iridium Sputtering Conditions on the Magnetic Properties of Co/Pt-Based Iridium-Synthetic Antiferromagnetic Coupling Reference Layer 2022 ·IEEE Transactions on Magnetics ·H. Honjo, Hiroshi Naganuma, K. Nishioka, T. V. A. Nguyen, M. Yasuhira, Shoji Ikeda, Tetsuo Endoh	3
3	First Demonstration of 25-nm Quad Interface p-MTJ Device With Low Resistance-Area Product MgO and Ten Years Retention for High Reliable STT-MRAM 2021 ·IEEE Transactions on Electron Devices ·K. Nishioka, S. Miura, H. Honjo, Hiroshi Inoue, (unknown), T. Nasuno, Hiroshi Naganuma, T. V. A. Nguyen, Y. Noguchi, M. Yasuhira, Shoji Ikeda, Tetsuo Endoh	13
4	Enhancement of magnetic coupling and magnetic anisotropy in MTJs with multiple CoFeB/MgO interfaces for high thermal stability 2021 ·AIP Advances ·K. Nishioka, H. Honjo, Hiroshi Naganuma, T. V. A. Nguyen, M. Yasuhira, Shoji Ikeda, Tetsuo Endoh	7
5	Effect of surface modification treatment on top-pinned MTJ with perpendicular easy axis 2021 ·AIP Advances ·H. Honjo, Hiroshi Naganuma, T. V. A. Nguyen, Hiroshi Inoue, M. Yasuhira, Shoji Ikeda, Tetsuo Endoh	3
6	Structural Analysis of CoFeB/MgO-Based Perpendicular MTJs With Junction Size of 20 nm by STEM Tomography 2020 ·IEEE Transactions on Magnetics ·M. Niwa, Kosuke Kimura, (unknown), (unknown), (unknown), Hiroshi Inoue, H. Honjo, Shoji Ikeda, Tetsuo Endoh	0
7	Influence of Hard Mask Materials on the Magnetic Properties of Perpendicular MTJs With Double CoFeB/MgO Interface 2020 ·IEEE Transactions on Magnetics ·H. Honjo, M. Niwa, K. Nishioka, T. V. A. Nguyen, Hiroshi Naganuma, Yasushi Endo, M. Yasuhira, Shoji Ikeda, Tetsuo Endoh	6
8	Novel Quad-Interface MTJ Technology and its First Demonstration With High Thermal Stability Factor and Switching Efficiency for STT-MRAM Beyond 2X nm 2020 ·IEEE Transactions on Electron Devices ·K. Nishioka, H. Honjo, Shoji Ikeda, (unknown), S. Miura, Hiroshi Inoue, T. Tanigawa, Y. Noguchi, M. Yasuhira, H. Sato, Tetsuo Endoh	22
9	Scalability of Quad Interface p-MTJ for 1X nm STT-MRAM With 10-ns Low Power Write Operation, 10 Years Retention and Endurance > 10¹¹ 2020 ·IEEE Transactions on Electron Devices ·S. Miura, K. Nishioka, Hiroshi Naganuma, T. V. A. Nguyen, H. Honjo, Shoji Ikeda, (unknown), Hirofumi Inoue, M. Niwa, (unknown), Y. Noguchi, (unknown), M. Yasuhira, Tetsuo Endoh	30
10	40 nm 1T–1MTJ 128 Mb STT-MRAM With Novel Averaged Reference Voltage Generator Based on Detailed Analysis of Scaled-Down Memory Cell Array Design 2020 ·IEEE Transactions on Magnetics ·Hiroki Koike, (unknown), (unknown), T. Nasuno, Y. Noguchi, M. Yasuhira, (unknown), Yitao Ma, H. Honjo, K. Nishioka, S. Miura, Hirofumi Inoue, Shoji Ikeda, Tetsuo Endoh	5
11	Dual-Port SOT-MRAM Achieving 90-MHz Read and 60-MHz Write Operations Under Field-Assistance-Free Condition 2020 ·IEEE Journal of Solid-State Circuits ·Masanori Natsui, (unknown), H. Honjo, (unknown), T. Nasuno, Chaoliang Zhang, (unknown), Hirofumi Inoue, M. Niwa, (unknown), Y. Noguchi, M. Yasuhira, Yitao Ma, (unknown), Shunsuke Fukami, H. Sato, Shoji Ikeda, Hideo Ohno, Tetsuo Endoh, Takahiro Hanyu	42
12	Effect of metallic Mg insertion in CoFeB/MgO interface perpendicular magnetic tunnel junction on tunnel magnetoresistance ratio observed by Synchrotron x-ray diffraction 2020 ·Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ·M. Niwa, H. Honjo, L. S. R. Kumara, Hirofumi Inoue, Shoji Ikeda, Hiroo Tajiri, Tetsuo Endoh	1
13	Critical Role of W Insertion Layer Sputtering Condition for Reference Layer on Magnetic and Transport Properties of Perpendicular-Anisotropy Magnetic Tunnel Junction 2019 ·IEEE Transactions on Magnetics ·H. Honjo, Shoji Ikeda, H. Sato, M. Yasuhira, Tetsuo Endoh	0
14	Change in chemical bonding state by thermal treatment in MgO-based magnetic tunnel junction observed by angle-resolved hard X-ray photoelectron spectroscopy 2019 ·Journal of Applied Physics ·M. Niwa, Akira Yasui, Eiji Ikenaga, H. Honjo, Shoji Ikeda, Tetsuya Nakamura, Tetsuo Endoh	7
15	Insertion Layer Thickness Dependence of Magnetic and Electrical Properties for Double-CoFeB/MgO-Interface Magnetic Tunnel Junctions 2019 ·IEEE Transactions on Magnetics ·S. Miura, T. V. A. Nguyen, Y. Endoh, Haruhiko Sato, Shoji Ikeda, K. Nishioka, H. Honjo, Tetsuo Endoh	14
16	A 47.14-$\mu\text{W}$ 200-MHz MOS/MTJ-Hybrid Nonvolatile Microcontroller Unit Embedding STT-MRAM and FPGA for IoT Applications 2019 ·IEEE Journal of Solid-State Circuits ·Masanori Natsui, Y. Noguchi, M. Yasuhira, H. Sato, Shoji Ikeda, Hideo Ohno, Tetsuo Endoh, Takahiro Hanyu, Daisuke Suzuki, (unknown), (unknown), H. Honjo, Hiroki Koike, T. Nasuno, Yitao Ma, (unknown)	41
17	Effect of surface modification treatment of buffer layer on thermal tolerance of synthetic ferrimagnetic reference layer in perpendicular-anisotropy magnetic tunnel junctions 2019 ·Journal of Applied Physics ·H. Honjo, Shoji Ikeda, H. Sato, M. Yasuhira, Tetsuo Endoh	7
18	A Recent Progress of Spintronics Devices for Integrated Circuit Applications 2018 ·Journal of Low Power Electronics and Applications ·Tetsuo Endoh, H. Honjo	47
19	Impact of Tungsten Sputtering Condition on Magnetic and Transport Properties of Double-MgO Magnetic Tunneling Junction With CoFeB/W/CoFeB Free Layer 2017 ·IEEE Transactions on Magnetics ·H. Honjo, Shoji Ikeda, H. Sato, K. Nishioka, T. Watanabe, S. Miura, T. Nasuno, Y. Noguchi, M. Yasuhira, T. Tanigawa, Hiroki Koike, Hiroshi Inoue, M. Muraguchi, M. Niwa, Hideo Ohno, Tetsuo Endoh	21
20	Novel Method of Evaluating Accurate Thermal Stability for MTJs Using Thermal Disturbance and its Demonstration for Single-/Double-Interface p-MTJ 2017 ·IEEE Transactions on Magnetics ·Takashi Saito, Kenchi Ito, H. Honjo, Shoji Ikeda, Tetsuo Endoh	7

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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