J.M. Nel

1.1k total citations
71 papers, 967 citations indexed

About

J.M. Nel is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, J.M. Nel has authored 71 papers receiving a total of 967 indexed citations (citations by other indexed papers that have themselves been cited), including 52 papers in Electrical and Electronic Engineering, 38 papers in Materials Chemistry and 31 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in J.M. Nel's work include ZnO doping and properties (31 papers), Semiconductor materials and interfaces (29 papers) and Semiconductor materials and devices (23 papers). J.M. Nel is often cited by papers focused on ZnO doping and properties (31 papers), Semiconductor materials and interfaces (29 papers) and Semiconductor materials and devices (23 papers). J.M. Nel collaborates with scholars based in South Africa, Zimbabwe and Germany. J.M. Nel's co-authors include F.D. Auret, W.E. Meyer, Mmantsae Diale, M. Hayes, P.J. Janse van Rensburg, W. Mtangi, A. Chawanda, C. Nyamhere, M. J. Legodi and Benard S. Mwankemwa and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Sensors and Actuators B Chemical.

In The Last Decade

J.M. Nel

69 papers receiving 939 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
J.M. Nel South Africa 19 669 627 301 215 93 71 967
P. D. Maryanchuk Ukraine 20 803 1.2× 681 1.1× 257 0.9× 85 0.4× 131 1.4× 108 1.1k
Soner Özen Türkiye 18 543 0.8× 628 1.0× 121 0.4× 162 0.8× 158 1.7× 81 968
Harald B. Profijt Netherlands 10 1.2k 1.7× 773 1.2× 181 0.6× 175 0.8× 33 0.4× 17 1.3k
Charles W. Teplin United States 22 1.1k 1.7× 919 1.5× 275 0.9× 155 0.7× 154 1.7× 72 1.4k
M.J. Thwaites United Kingdom 14 375 0.6× 418 0.7× 181 0.6× 225 1.0× 73 0.8× 29 720
S. Fernández Spain 18 578 0.9× 660 1.1× 122 0.4× 214 1.0× 66 0.7× 85 969
Tae-Yeon Seong South Korea 18 557 0.8× 510 0.8× 168 0.6× 199 0.9× 134 1.4× 52 788
N.B. Ibrahim Malaysia 16 470 0.7× 341 0.5× 133 0.4× 221 1.0× 80 0.9× 53 621
Florian Ruske Germany 25 1.6k 2.3× 1.2k 2.0× 199 0.7× 193 0.9× 116 1.2× 81 1.8k
V. Osinniy Poland 16 628 0.9× 783 1.2× 129 0.4× 293 1.4× 50 0.5× 48 1.0k

Countries citing papers authored by J.M. Nel

Since Specialization
Citations

This map shows the geographic impact of J.M. Nel's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J.M. Nel with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J.M. Nel more than expected).

Fields of papers citing papers by J.M. Nel

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J.M. Nel. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J.M. Nel. The network helps show where J.M. Nel may publish in the future.

Co-authorship network of co-authors of J.M. Nel

This figure shows the co-authorship network connecting the top 25 collaborators of J.M. Nel. A scholar is included among the top collaborators of J.M. Nel based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J.M. Nel. J.M. Nel is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Auret, F.D., et al.. (2024). A DLTS analysis of alpha particle irradiated commercial 4H-SiC Schottky barrier diodes. Journal of Materials Science Materials in Electronics. 35(27). 1 indexed citations
2.
Nel, J.M., et al.. (2024). Structural and Electrical Characterization of Solution‐Deposited β‐Ga2O3:Al. physica status solidi (b). 262(8). 1 indexed citations
3.
Nel, J.M., et al.. (2023). Insecticide Monitoring in Cattle Dip with an E-Nose System and Room Temperature Screen-Printed ZnO Gas Sensors. Agriculture. 13(8). 1483–1483. 4 indexed citations
5.
Nel, J.M., et al.. (2023). Structural and optical characterization of beta-gallium oxide. Journal of Materials Science Materials in Electronics. 34(34). 3 indexed citations
7.
Auret, F.D., et al.. (2019). In Situ Study of Low-Temperature Irradiation-Induced Defects in Silicon Carbide. Journal of Electronic Materials. 48(6). 3849–3853. 1 indexed citations
8.
Meyer, W.E., et al.. (2018). Structural, optical and electrical properties of a Schottky diode fabricated on Ce doped ZnO nanorods grown using a two step chemical bath deposition. Materials Science in Semiconductor Processing. 87. 187–194. 22 indexed citations
9.
Auret, F.D., et al.. (2017). Electrical characterization of defects induced by electron beam exposure in low doped n-GaAs. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 409. 36–40. 10 indexed citations
10.
Nel, J.M., et al.. (2015). Role of substrate and annealing temperature on the structure of ZnO and AlxZn1−xO thin films for solar cell applications. Physica B Condensed Matter. 480. 72–79. 7 indexed citations
11.
Mtangi, W., Matthias Schmidt, F.D. Auret, et al.. (2013). A study of the T2 defect and the emission properties of the E3 deep level in annealed melt grown ZnO single crystals. Journal of Applied Physics. 113(12). 9 indexed citations
12.
Meyer, W.E., et al.. (2011). Characterization of AlGaN-based metal–semiconductor solar-blind UV photodiodes with IrO2 Schottky contacts. Physica B Condensed Matter. 407(10). 1529–1532. 6 indexed citations
13.
Mtangi, W., J.M. Nel, F.D. Auret, et al.. (2011). Annealing and surface conduction on Hydrogen peroxide treated bulk melt-grown, single crystal ZnO. Physica B Condensed Matter. 407(10). 1624–1627. 9 indexed citations
14.
Chawanda, A., et al.. (2011). Electrical characterisation of ruthenium Schottky contacts on n-Ge (100). Physica B Condensed Matter. 407(10). 1570–1573. 4 indexed citations
15.
Chawanda, A., J.M. Nel, F.D. Auret, et al.. (2010). Correlation Between Barrier Heights and Ideality Factors of Ni/n-Ge (100) Schottky Barrier Diodes. Journal of the Korean Physical Society. 57(6(1)). 1970–1975. 10 indexed citations
16.
Mtangi, W., P.J. Janse van Rensburg, Mmantsae Diale, et al.. (2010). Analysis of current–voltage measurements on Au/Ni/n-GaN Schottky contacts in a wide temperature range. Materials Science and Engineering B. 171(1-3). 1–4. 26 indexed citations
17.
Nel, J.M., et al.. (2009). Adult septic arthritis in a tertiary setting : a retrospective analysis. The South African Orthopaedic Journal (SAOJ). 8(3). 53–58. 2 indexed citations
18.
Chawanda, A., C. Nyamhere, F.D. Auret, et al.. (2009). Thermal stability study of palladium and cobalt Schottky contacts on n-Ge (100) and defects introduced during contacts fabrication and annealing process. Physica B Condensed Matter. 404(22). 4482–4484. 11 indexed citations
19.
Auret, F.D., S.M.M. Coelho, M. Hayes, W.E. Meyer, & J.M. Nel. (2008). Electrical characterization of defects introduced in Ge during electron beam deposition of different metals. physica status solidi (a). 205(1). 159–161. 10 indexed citations
20.
Wenckstern, Holger von, G. Biehne, Michael Lorenz, et al.. (2008). Dependence of Trap Concentrations in ZnO Thin Films on Annealing Conditions. Journal of the Korean Physical Society. 53(9(5)). 2861–2863. 16 indexed citations

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