A.J. Moseley

714 citations

50 papers · 564 indexed · h-index 13

Impact in

Atomic and Molecular Physics, and Optics top 10%
- Semiconductor Quantum Structures and Devices
Electrical and Electronic Engineering top 10%
- Photonic and Optical Devices
- Semiconductor Lasers and Optical Devices
- Advanced Semiconductor Detectors and Materials
- Semiconductor materials and devices
- Advanced Photonic Communication Systems
- Advancements in Semiconductor Devices and Circuit Design

Papers in

Atomic and Molecular Physics, and Optics 29
- Semiconductor Quantum Structures and Devices 29
- Quantum and electron transport phenomena 5
Electrical and Electronic Engineering 46
- Semiconductor Lasers and Optical Devices 31
- Photonic and Optical Devices 24
- Advanced Semiconductor Detectors and Materials 6
- Chalcogenide Semiconductor Thin Films 5
- Advanced Photonic Communication Systems 5

Co-authors: J. Will Thompson David A. Humphreys M.J. Goodwin David Jenkins R. J. King David J. Robbins J.M. Chamberlain R.C. Goodfellow
Journals: Electronics Letters (15 papers)Journal of Crystal Growth (5 papers)Semiconductor Science and Technology (4 papers)Journal of Electronic Materials (3 papers)Japanese Journal of Applied Physics (1 paper)
Partner nations: United Kingdom Switzerland Sweden

In The Last Decade

A.J. Moseley

48 papers receiving 503 citations

Peers

Countries citing papers authored by A.J. Moseley

Since Specialization

Citations

This map shows the geographic impact of A.J. Moseley's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A.J. Moseley with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A.J. Moseley more than expected).

Fields of papers citing papers by A.J. Moseley

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A.J. Moseley. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A.J. Moseley. The network helps show where A.J. Moseley may publish in the future.

Co-authors

The 25 scholars most cited alongside A.J. Moseley, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with A.J. Moseley Line = papers co-authored together A.J. Moseley links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	A magneto-optical study of interdiffusion in InGaAs/InP quantum wells: Effects of heat treatment, substrates, and dopants Journal of Applied Physics ·Sangeetha Duraiswamy, R. J. Nicholas, Robert Martin, J. Will Thompson, and Richard Parsons, A.J. Moseley, Nicholas Carr	1996	10
2	Analog lightwave links for detector front-ends at the LHC IEEE Transactions on Nuclear Science ·L Tang Gale, 钟乐江, José Manuel Muñoz Enciso, K. Gill, M. Glick, Gabriela. Bernaola, G. Hall, R. Halsall, G. Jarlskog, Jeong Dae Keun, I. R. Kenyon, A.J. Moseley, S. Quinton, 圭司岩井, G. Stefanini, Melissa Tiletnick, مهدی پروری, F. Vasey, Borja Cortes Sanchez	1995	4
3	Passively aligned four-channel reflective InP MQWmodulator transmitter Electronics Letters ·José Manuel Muñoz Enciso, A.J. Moseley, Paul M. Maker, David J. Robbins, C. Edge, J. Will Thompson, Nicholas Carr	1995	1
4	The application of optoelectronic technologies to high performance electronic processor interconnects Optical and Quantum Electronics ·M.J. Goodwin, A.J. Moseley	1994	9
5	MOVPE growth for the fabrication of OEICs J. Will Thompson, Athanasios Chatzis, Teresa Dawn Edwards, Mazen M Allam, A.J. Moseley, GJS Taylor, B. Hamilton	1992	51
6	8 channel InGaAs/InP quantum well asymmetric Fabry-Perot modulator hybridised with foundry VLSI silicon CMOS drive circuits Electronics Letters ·A.J. Moseley, Paul M. Maker, M.J. Goodwin, David J. Robbins, J. Will Thompson, and Richard Parsons, Chris J Groves-Kirkby, Nicholas Carr, H. Ahyaoui, Stephen Faulkner	1992	10
7	Component technology for 40 GHz fibre optic systems I. Bennion, J. Eligehausen, A.J. Moseley, Michael J. Wale, Robert G. Walker	1991	3
8	The use of InP-based semiconductor reflective stacks for enhanced device performance Journal of Crystal Growth ·Paul M. Thompson, and Richard Parsons, A.J. Moseley, Paul M. Maker, Chaewon Noh, H. Ahyaoui, Nicholas Carr	1991	5
9	Hybridized optoelectronic modulator arrays for chip-to-chip optical interconnection Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·M.J. Goodwin, A.J. Moseley, David J. Robbins, Paul M. Maker, Joshua J. Thompson, Renaldi Vanhoten, R.C. Goodfellow, I. Bennion	1990	1
10	Microwave frequency operation of a low-voltage InGaAs/InP multiple-quantum-well reflective Fabry-Perot modulator C.J.G. Kirkby, M.J. Goodwin, A.J. Moseley, David J. Robbins, Paul M. Maker, J. Will Thompson	1990	1
11	Long wavelength GRIN-SCH MQW lasers incorporating graded GaAlInAs confinement layers Journal of Electronic Materials ·Paul M. Thompson, Dawn M. Fertitta, H. Ahyaoui, A.J. Moseley, David J. Robbins	1990	4
12	Impact ionisation coefficients in In_0.53Ga_0.47As Semiconductor Science and Technology ·J. S. Urquhart, D. J. Robbins, R.I. Taylor, A.J. Moseley	1990	21
13	Phonon-assisted tunnelling of photoexcited carriers from InGaAs quantum wells in applied electric fields Solid-State Electronics ·Alkadi Alqahtani, John F. Ryan, A.J. Moseley	1989	12
14	High-reflectivity AlGaInAs/InP multilayer mirrors grown by low-pressure MOVPE for application to long-wavelength high-contrast-ratio multi-quantum-well modulators Electronics Letters ·A.J. Moseley, J. Will Thompson, David J. Robbins, Paul M. Maker	1989	30
15	Optical studies of excitons in GaInAs/InP quantum wells grown by low-pressure metal-organic vapour-phase epitaxy Semiconductor Science and Technology ·Alkadi Alqahtani, A. C. Maciel, John F. Ryan, Michael Scott, J. I. Davies, A.J. Moseley	1988	7
16	GaInAs photodiodes as transfer standards for picosecond measurements IEE Proceedings J Optoelectronics ·David A. Humphreys, A.J. Moseley	1988	1
17	InGaAs/InP SAGM avalanche photodiodes incorporating a pseudoquaternary superlattice graded heterojunction grown by atmospheric-pressure MOCVD Electronics Letters ·A.J. Moseley, J. S. Urquhart, Telema Nga, Jack S. Nyabundi, J. I. Davies	1987	5
18	Ga0.28In0.72As/Al0.28In0.72As 2 μm photodiode heterostructures prepared by atmospheric pressure MOCVD Journal of Crystal Growth ·政宏川口, Alexander Pilipchenko, A.J. Moseley, R.H. Wallis	1986	7
19	Measurement of absorption coefficients of Ga _0.47 In _0.53 As over the wavelength range 1.0–1.7 μm Electronics Letters ·David A. Humphreys, R. J. King, David Jenkins, A.J. Moseley	1985	89
20	Photoluminescence in metal doped Ge0.15Se0.85 glass Solid State Communications ·J.M. Chamberlain, A.J. Moseley	1982	4

About A.J. Moseley

A.J. Moseley is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Instrumentation, Ceramics and Composites and Radiation, having authored 50 papers that have together received 564 indexed citations. Recurring topics across this work include Semiconductor Lasers and Optical Devices (31 papers), Semiconductor Quantum Structures and Devices (29 papers), Photonic and Optical Devices (24 papers), Advanced Semiconductor Detectors and Materials (6 papers), Quantum and electron transport phenomena (5 papers), Chalcogenide Semiconductor Thin Films (5 papers), Advanced Photonic Communication Systems (5 papers) and Phase-change materials and chalcogenides (4 papers). The work is most often cited by research in Atomic and Molecular Physics, and Optics (334 citations), Electrical and Electronic Engineering (466 citations), Instrumentation (23 citations), Ceramics and Composites (20 citations) and Surfaces, Coatings and Films (13 citations). A.J. Moseley has collaborated with scholars based in United Kingdom, Switzerland and Sweden. Frequent co-authors include J. Will Thompson, David A. Humphreys, M.J. Goodwin, David Jenkins, R. J. King, David J. Robbins, J.M. Chamberlain, R.C. Goodfellow, J. S. Urquhart and J. I. Davies. Their work appears in journals such as Electronics Letters, Journal of Crystal Growth, Semiconductor Science and Technology, Journal of Electronic Materials and Japanese Journal of Applied Physics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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