M.E. Kim

516 total citations
20 papers, 289 citations indexed

About

M.E. Kim is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics. According to data from OpenAlex, M.E. Kim has authored 20 papers receiving a total of 289 indexed citations (citations by other indexed papers that have themselves been cited), including 19 papers in Electrical and Electronic Engineering, 10 papers in Atomic and Molecular Physics, and Optics and 4 papers in Condensed Matter Physics. Recurrent topics in M.E. Kim's work include Radio Frequency Integrated Circuit Design (13 papers), Semiconductor Quantum Structures and Devices (9 papers) and Advancements in Semiconductor Devices and Circuit Design (8 papers). M.E. Kim is often cited by papers focused on Radio Frequency Integrated Circuit Design (13 papers), Semiconductor Quantum Structures and Devices (9 papers) and Advancements in Semiconductor Devices and Circuit Design (8 papers). M.E. Kim collaborates with scholars based in United States. M.E. Kim's co-authors include A.K. Oki, D.K. Umemoto, M. Hafizi, K.W. Kobayashi, D.C. Streit, L. M. Pawlowicz, L.T. Tran, R. Esfandiari, C.R. Crowell and B. Nelson and has published in prestigious journals such as IEEE Transactions on Microwave Theory and Techniques, IEEE Transactions on Electron Devices and IEEE Transactions on Nuclear Science.

In The Last Decade

M.E. Kim

17 papers receiving 268 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
M.E. Kim United States	9	284	115	44	41	7	20	289
B. Nelson United States	9	243 0.9×	73 0.6×	46 1.0×	37 0.9×	21 3.0×	25	254
R. Esfandiari United States	9	285 1.0×	107 0.9×	53 1.2×	25 0.6×	11 1.6×	27	295
L.K. Hanes United States	10	306 1.1×	103 0.9×	28 0.6×	73 1.8×	11 1.6×	17	326
L.D. Reynolds United States	10	397 1.4×	165 1.4×	39 0.9×	65 1.6×	20 2.9×	16	416
J.L. Vorhaus United States	10	346 1.2×	149 1.3×	34 0.8×	55 1.3×	23 3.3×	19	368
Y. Amamiya Japan	10	286 1.0×	65 0.6×	38 0.9×	14 0.3×	3 0.4×	40	289
D.R. Pehlke United States	9	407 1.4×	56 0.5×	49 1.1×	34 0.8×	3 0.4×	24	409
Chinchun Meng Taiwan	13	395 1.4×	83 0.7×	58 1.3×	79 1.9×	21 3.0×	63	417
W.J. Ho United States	11	414 1.5×	175 1.5×	33 0.8×	106 2.6×	5 0.7×	48	417
A. Scuderi Italy	12	605 2.1×	33 0.3×	66 1.5×	64 1.6×	5 0.7×	52	611

Countries citing papers authored by M.E. Kim

Since Specialization

Citations

This map shows the geographic impact of M.E. Kim's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M.E. Kim with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M.E. Kim more than expected).

Fields of papers citing papers by M.E. Kim

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M.E. Kim. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M.E. Kim. The network helps show where M.E. Kim may publish in the future.

Co-authorship network of co-authors of M.E. Kim

This figure shows the co-authorship network connecting the top 25 collaborators of M.E. Kim. A scholar is included among the top collaborators of M.E. Kim based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M.E. Kim. M.E. Kim is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

Kim, M.E., A.K. Oki, P.D. Chow, et al.. (2003). 12-40 GHz low harmonic distortion and phase noise performance of GaAs heterojunction bipolar transistors. 117–120. 9 indexed citations

Oki, A.K., et al.. (2003). High-performance GaAs heterojunction bipolar transistor logarithmic IF amplifier. 41–45. 5 indexed citations

Hafizi, M., M.E. Kim, A.K. Oki, et al.. (2003). Modeling and analysis of GaAs/AlGaAs heterojunction bipolar transistors for improved current gain and f/sub T/. 24. 70–73.

Nelson, B., et al.. (2003). High-linearity, low DC power GaAs HBT broadband amplifiers to 11 GHz. 79–82. 3 indexed citations

Oki, A.K., et al.. (2003). A GaAs HBT ultra-linear video amplifier gain cell. 23. 128–130.

Song, Yu, et al.. (2003). Radiation hardness characteristics of GaAs/AlGaAs heterojunction bipolar transistors. 1. 155–158. 1 indexed citations

Kobayashi, K.W., et al.. (2003). GaAs heterojunction bipolar transistor MMIC DC to 10 GHz direct-coupled feedback amplifier. 33. 87–90. 5 indexed citations

Oki, A.K., et al.. (2003). A GaAs HBT monolithic logarithmic IF (0.5 to 1.5 GHz) amplifier with 60 dB dynamic range and 400 mW power consumption. IEEE MTT-S International Microwave Symposium digest. 27. 537–540. 3 indexed citations

Oki, A.K., et al.. (2003). A GaAs HBT monolithic microwave switched-gain amplifier with +31 dB to -31 dB gain in 2 dB increments. 83–86.

10.

Oki, A.K., et al.. (2002). A monolithic GaAs HBT upconverter. 77–80. 8 indexed citations

11.

Nelson, B., et al.. (2002). High-linearity, low DC power monolithic GaAs HBT broadband amplifiers to 11 GHz. 38. 15–18. 20 indexed citations

12.

Kobayashi, K.W., D.K. Umemoto, R. Esfandiari, et al.. (2002). GaAs HBT MMIC broadband amplifiers from DC to 20 GHz. 33. 19–22. 8 indexed citations

13.

Hafizi, M., L. M. Pawlowicz, L.T. Tran, et al.. (2002). Reliability analysis of GaAs/AlGaAs HBTs under forward current/temperature stress. 329–332. 17 indexed citations

14.

Kobayashi, K.W., et al.. (2002). GaAs HBT wideband and low power consumption amplifiers to 24 GHz. 85–88. 6 indexed citations

15.

Viswanathan, C.R., et al.. (1991). DC conduction and low-frequency noise characteristics of GaAlAs/GaAs single heterojunction bipolar transistors at room temperature and low temperatures. IEEE Transactions on Microwave Theory and Techniques. 39(6). 1054–1058. 6 indexed citations

16.

Kobayashi, K.W., R. Esfandiari, M. Hafizi, et al.. (1991). GaAs HBT wideband matrix distributed and Darlington feedback amplifiers to 24 GHz. IEEE Transactions on Microwave Theory and Techniques. 39(12). 2001–2009. 38 indexed citations

17.

Hafizi, M., C.R. Crowell, L. M. Pawlowicz, & M.E. Kim. (1990). Improved current gain and f/sub T/ through doping profile selection in linearly graded heterojunction bipolar transistors. IEEE Transactions on Electron Devices. 37(8). 1779–1788. 16 indexed citations

18.

Kim, M.E., et al.. (1989). GaAs heterojunction bipolar transistor device and IC technology for high-performance analog and microwave applications. IEEE Transactions on Microwave Theory and Techniques. 37(9). 1286–1303. 106 indexed citations

19.

Song, Yu, et al.. (1989). Effects of neutron irradiation on GaAs/AlGaAs heterojunction bipolar transistors. IEEE Transactions on Nuclear Science. 36(6). 2155–2160. 23 indexed citations

20.

Oki, A.K., et al.. (1988). High-performance GaAs heterojunction bipolar transistor monolithic logarithmic IF amplifiers. IEEE Transactions on Microwave Theory and Techniques. 36(12). 1958–1965. 15 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact