R.D. Underwood

560 total citations
13 papers, 475 citations indexed

About

R.D. Underwood is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, R.D. Underwood has authored 13 papers receiving a total of 475 indexed citations (citations by other indexed papers that have themselves been cited), including 9 papers in Condensed Matter Physics, 9 papers in Electrical and Electronic Engineering and 3 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in R.D. Underwood's work include GaN-based semiconductor devices and materials (9 papers), Semiconductor materials and devices (5 papers) and Semiconductor Quantum Structures and Devices (3 papers). R.D. Underwood is often cited by papers focused on GaN-based semiconductor devices and materials (9 papers), Semiconductor materials and devices (5 papers) and Semiconductor Quantum Structures and Devices (3 papers). R.D. Underwood collaborates with scholars based in United States and Japan. R.D. Underwood's co-authors include D. Kapolnek, Umesh K. Mishra, S. Keller, P. Kozodoy, R. Vetury, Steven P. DenBaars, B.P. Keller, Roseanne Warren, Zahra Karimi and S. Keller and has published in prestigious journals such as Applied Physics Letters, Electrochimica Acta and Journal of Crystal Growth.

In The Last Decade

R.D. Underwood

13 papers receiving 460 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
R.D. Underwood United States	8	385	209	198	197	126	13	475
Brendan Gunning United States	17	569 1.5×	215 1.0×	366 1.8×	245 1.2×	101 0.8×	47	684
Z. L. Xie China	14	412 1.1×	280 1.3×	161 0.8×	259 1.3×	79 0.6×	52	552
R. Jagannathan United States	6	231 0.6×	196 0.9×	132 0.7×	118 0.6×	29 0.2×	6	402
Jairo Arbey Rodríguez Mártinez Colombia	13	271 0.7×	383 1.8×	199 1.0×	287 1.5×	76 0.6×	72	590
K. Kłosek Poland	13	363 0.9×	273 1.3×	175 0.9×	232 1.2×	74 0.6×	35	493
Marta Sobańska Poland	15	423 1.1×	328 1.6×	218 1.1×	266 1.4×	86 0.7×	52	597
Yoshiki Iwazaki Japan	12	139 0.4×	322 1.5×	140 0.7×	91 0.5×	86 0.7×	22	450
Guijuan Zhao China	12	293 0.8×	308 1.5×	128 0.6×	163 0.8×	80 0.6×	54	478
H. S. Craft United States	11	187 0.5×	241 1.2×	226 1.1×	155 0.8×	33 0.3×	22	397
P. Chou United States	12	247 0.6×	269 1.3×	191 1.0×	154 0.8×	42 0.3×	39	466

Countries citing papers authored by R.D. Underwood

Since Specialization

Citations

This map shows the geographic impact of R.D. Underwood's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by R.D. Underwood with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites R.D. Underwood more than expected).

Fields of papers citing papers by R.D. Underwood

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by R.D. Underwood. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by R.D. Underwood. The network helps show where R.D. Underwood may publish in the future.

Co-authorship network of co-authors of R.D. Underwood

This figure shows the co-authorship network connecting the top 25 collaborators of R.D. Underwood. A scholar is included among the top collaborators of R.D. Underwood based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with R.D. Underwood. R.D. Underwood is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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13 of 13 papers shown

Underwood, R.D., et al.. (2021). Dissolvable conducting polymer supercapacitor for transient electronics. Organic Electronics. 101. 106412–106412. 14 indexed citations

Underwood, R.D., et al.. (2018). MOF-Derived Carbons As Ordered Isoreticular Structures for High Performance Sodium-Ion Battery Anode. ECS Meeting Abstracts. MA2018-01(3). 445–445. 1 indexed citations

Karimi, Zahra, et al.. (2018). Metal organic framework-derived carbon structures for sodium-ion battery anodes. Electrochimica Acta. 297. 129–136. 45 indexed citations

Katona, Thomas, Mathew C. Schmidt, Tal Margalith, et al.. (2003). 336 nm ultraviolet LEDs grown with AlN interlayers for strain reduction. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 2206–2209. 1 indexed citations

Kapolnek, D., S. Keller, R.D. Underwood, Steven P. DenBaars, & Umesh K. Mishra. (1998). Spatial control of InGaN luminescence by MOCVD selective epitaxy. Journal of Crystal Growth. 189-190. 83–86. 17 indexed citations

Underwood, R.D., P. Kozodoy, S. Keller, Steven P. DenBaars, & Umesh K. Mishra. (1998). Piezoelectric surface barrier lowering applied to InGaN/GaN field emitter arrays. Applied Physics Letters. 73(3). 405–407. 19 indexed citations

Underwood, R.D., S. Keller, U. K. Mishra, et al.. (1998). GaN field emitter array diode with integrated anode. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 16(2). 822–825. 31 indexed citations

Underwood, R.D., D. Kapolnek, S. Keller, et al.. (1997). GaN FEA diode with integrated anode. 1 indexed citations

Kapolnek, D., R.D. Underwood, B.P. Keller, et al.. (1997). Selective area epitaxy of GaN for electron field emission devices. Journal of Crystal Growth. 170(1-4). 340–343. 39 indexed citations

10.

Underwood, R.D., D. Kapolnek, B.P. Keller, et al.. (1997). Selective-area regrowth of GaN field emission tips. Solid-State Electronics. 41(2). 243–245. 47 indexed citations

11.

Kapolnek, D., S. Keller, R. Vetury, et al.. (1997). Anisotropic epitaxial lateral growth in GaN selective area epitaxy. Applied Physics Letters. 71(9). 1204–1206. 254 indexed citations

12.

Underwood, R.D., D. Kapolnek, S. Keller, et al.. (1997). GaN FEA diode with integrated anode. 3. 132–136. 1 indexed citations

13.

Jiang, Weilin, Nam Nguyen, R.D. Underwood, Umesh K. Mishra, & R. G. Wilson. (1995). Tellurium-doped Al0.43Ga0.57As/(In0.2)GaAs modulation doped heterostructures by molecular-beam-epitaxy. Applied Physics Letters. 66(7). 845–847. 5 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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