R. E. Kremer

422 total citations
20 papers, 358 citations indexed

About

R. E. Kremer is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Materials Chemistry. According to data from OpenAlex, R. E. Kremer has authored 20 papers receiving a total of 358 indexed citations (citations by other indexed papers that have themselves been cited), including 14 papers in Atomic and Molecular Physics, and Optics, 14 papers in Electrical and Electronic Engineering and 7 papers in Materials Chemistry. Recurrent topics in R. E. Kremer's work include Semiconductor Quantum Structures and Devices (7 papers), Advanced Semiconductor Detectors and Materials (7 papers) and Semiconductor materials and devices (5 papers). R. E. Kremer is often cited by papers focused on Semiconductor Quantum Structures and Devices (7 papers), Advanced Semiconductor Detectors and Materials (7 papers) and Semiconductor materials and devices (5 papers). R. E. Kremer collaborates with scholars based in United States. R. E. Kremer's co-authors include J. K. Furdyna, J. S. Blakemore, Marek Skowroński, M. Ç. Arikan, Fred G. Moore, Kevin Burke, Yang Tang, R. G. Downing, R. C. Bowman and Timothy A. Miller and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

R. E. Kremer

20 papers receiving 331 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
R. E. Kremer United States 9 256 222 129 66 28 20 358
M. G. Mier United States 8 247 1.0× 244 1.1× 71 0.6× 73 1.1× 33 1.2× 22 342
A. Pesek Austria 12 208 0.8× 203 0.9× 156 1.2× 61 0.9× 28 1.0× 27 331
D. Ferré France 12 176 0.7× 194 0.9× 112 0.9× 49 0.7× 14 0.5× 32 337
A.M. Keir United Kingdom 11 244 1.0× 202 0.9× 126 1.0× 81 1.2× 31 1.1× 30 353
G. Neuhold Germany 10 163 0.6× 322 1.5× 164 1.3× 94 1.4× 52 1.9× 21 438
C. J. Spindt United States 11 290 1.1× 303 1.4× 90 0.7× 38 0.6× 12 0.4× 14 398
F. Voillot France 14 288 1.1× 344 1.5× 189 1.5× 44 0.7× 30 1.1× 36 453
M. Baudet France 12 337 1.3× 463 2.1× 151 1.2× 57 0.9× 20 0.7× 25 526
R. W. Streater Canada 12 250 1.0× 250 1.1× 105 0.8× 37 0.6× 25 0.9× 31 359
W. Nijman Netherlands 8 245 1.0× 246 1.1× 100 0.8× 37 0.6× 14 0.5× 12 347

Countries citing papers authored by R. E. Kremer

Since Specialization
Citations

This map shows the geographic impact of R. E. Kremer's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by R. E. Kremer with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites R. E. Kremer more than expected).

Fields of papers citing papers by R. E. Kremer

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by R. E. Kremer. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by R. E. Kremer. The network helps show where R. E. Kremer may publish in the future.

Co-authorship network of co-authors of R. E. Kremer

This figure shows the co-authorship network connecting the top 25 collaborators of R. E. Kremer. A scholar is included among the top collaborators of R. E. Kremer based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with R. E. Kremer. R. E. Kremer is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Skowroński, Marek & R. E. Kremer. (1991). Effects of thermal annealing on oxygen related centers in GaAs. Journal of Applied Physics. 69(11). 7825–7830. 10 indexed citations
2.
Skowroński, Marek, et al.. (1991). Calibration of the isolated oxygen interstitial localized vibrational mode absorption line in GaAs. Applied Physics Letters. 58(14). 1545–1547. 7 indexed citations
3.
Skowroński, Marek, et al.. (1990). Location of energy levels of oxygen-vacancy complex in GaAs. Applied Physics Letters. 57(9). 902–904. 54 indexed citations
4.
Kremer, R. E., et al.. (1990). Low dislocation density GaAs grown by the vertical Bridgman technique. Journal of materials research/Pratt's guide to venture capital sources. 5(7). 1468–1474. 7 indexed citations
5.
Blakemore, J. S., et al.. (1989). Undoped semi-insulating GaAs grown by a vertical Bridgman method: Electrical property analysis using a simple ambipolar correction. Journal of Applied Physics. 66(11). 5428–5434. 4 indexed citations
6.
Bowman, R. C., et al.. (1988). Distribution of Boron Atoms in Ion Implanted Compound Semiconductors. MRS Proceedings. 126. 2 indexed citations
7.
Kremer, R. E., et al.. (1988). Deep levels in CdTe. Journal of Crystal Growth. 86(1-4). 490–496. 27 indexed citations
8.
Kremer, R. E., Yang Tang, & Fred G. Moore. (1988). Thermal annealing of narrow-gap HgTe-based alloys. Journal of Crystal Growth. 86(1-4). 797–803. 4 indexed citations
9.
Kremer, R. E. & J. K. Furdyna. (1988). Helicon-excited electron paramagnetic resonance inHg1xMnxSe. Physical review. B, Condensed matter. 37(10). 4875–4885. 6 indexed citations
10.
Kremer, R. E., et al.. (1988). Vertical Bridgman Growth of GaAs. MRS Proceedings. 144. 3 indexed citations
11.
Moore, Fred G. & R. E. Kremer. (1988). Lateral diffusion of mercury during laser annealing of HgMnTe and other HgTe-based materials. Applied Physics Letters. 52(16). 1314–1316. 6 indexed citations
12.
Kremer, R. E., et al.. (1987). Transient photoconductivity measurements in semi-insulating GaAs. II. A digital approach. Journal of Applied Physics. 62(6). 2432–2438. 39 indexed citations
13.
Kremer, R. E., et al.. (1987). Transient photoconductivity measurements in semi-insulating GaAs. I. An analog approach. Journal of Applied Physics. 62(6). 2424–2431. 83 indexed citations
14.
Kremer, R. E. & J. S. Blakemore. (1986). Comparison of approaches for achieving very high speed in GaAs VLSI devices. Superlattices and Microstructures. 2(1). 69–73. 1 indexed citations
15.
Kremer, R. E., et al.. (1986). Composition gradients in bridgman-grown Hg1−xMnxTe. Materials Letters. 4(2). 90–92. 2 indexed citations
16.
Kremer, R. E., et al.. (1986). Composition gradients and segregation in Hg1−Mn Te. Journal of Crystal Growth. 75(3). 415–420. 9 indexed citations
17.
Kremer, R. E., et al.. (1986). Deep Level Defects in CdTe. MRS Proceedings. 90. 2 indexed citations
18.
Kremer, R. E. & J. K. Furdyna. (1985). Dependence of EPR in diluted magnetic semiconductors on the host lattice. Physical review. B, Condensed matter. 31(1). 1–4. 47 indexed citations
19.
Kremer, R. E. & J. K. Furdyna. (1985). Investigation of EPR inCd1xMnxTe by microwave Faraday effect. Physical review. B, Condensed matter. 32(9). 5591–5599. 32 indexed citations
20.
Kremer, R. E. & J. K. Furdyna. (1983). EPR measurements in Cd1−xMnxTe under extreme line broadening using microwave Faraday rotation. Journal of Magnetism and Magnetic Materials. 40(1-2). 185–189. 13 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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