J. S. Blakemore

6.1k total citations · 2 hit papers
91 papers, 4.8k citations indexed

About

J. S. Blakemore is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, J. S. Blakemore has authored 91 papers receiving a total of 4.8k indexed citations (citations by other indexed papers that have themselves been cited), including 56 papers in Electrical and Electronic Engineering, 51 papers in Atomic and Molecular Physics, and Optics and 18 papers in Materials Chemistry. Recurrent topics in J. S. Blakemore's work include Semiconductor Quantum Structures and Devices (28 papers), Semiconductor materials and devices (26 papers) and Semiconductor materials and interfaces (23 papers). J. S. Blakemore is often cited by papers focused on Semiconductor Quantum Structures and Devices (28 papers), Semiconductor materials and devices (26 papers) and Semiconductor materials and interfaces (23 papers). J. S. Blakemore collaborates with scholars based in United States, Australia and Ireland. J. S. Blakemore's co-authors include V.I. Fistul, H.K. Henisch, Katsuya Nomura, R. E. Kremer, D. C. Look, M. Ç. Arikan, L.J. Sargent, Roger Messenger, R. Y. Koyama and J. Kennewell and has published in prestigious journals such as Physical Review Letters, The Journal of Chemical Physics and Physical review. B, Condensed matter.

In The Last Decade

J. S. Blakemore

91 papers receiving 4.5k citations

Hit Papers

Semiconducting and other major properties of gallium arse... 1969 2026 1988 2007 1982 1969 500 1000 1.5k
What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

  1. Semiconducting and other major properties of gallium arsenide
    1982 2.0k citations J. S. Blakemore Journal of Applied Physics profile →
  2. Heavily Doped Semiconductors
    1969 417 citations J. S. Blakemore et al. profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
J. S. Blakemore United States 24 2.8k 2.7k 1.6k 473 448 91 4.8k
H. J. Levinstein United States 37 3.0k 1.1× 2.7k 1.0× 2.1k 1.3× 498 1.1× 711 1.6× 126 5.2k
T. S. Moss United States 25 4.1k 1.5× 2.5k 0.9× 3.5k 2.2× 472 1.0× 486 1.1× 90 6.2k
Otfried Madelung Germany 17 2.5k 0.9× 2.2k 0.8× 2.5k 1.6× 516 1.1× 495 1.1× 38 4.6k
Benjamin Lax United States 35 2.4k 0.9× 3.4k 1.2× 1.3k 0.8× 521 1.1× 462 1.0× 101 4.8k
A. K. Ramdas United States 34 2.6k 0.9× 2.5k 0.9× 2.3k 1.5× 471 1.0× 271 0.6× 158 4.4k
P. N. Keating United Kingdom 14 1.2k 0.4× 1.7k 0.6× 1.9k 1.2× 501 1.1× 438 1.0× 32 3.4k
Jun‐ichi Nishizawa Japan 36 4.3k 1.5× 2.5k 0.9× 1.2k 0.8× 416 0.9× 474 1.1× 369 5.1k
E. G. Spencer United Kingdom 28 1.6k 0.6× 1.5k 0.6× 1.2k 0.8× 347 0.7× 511 1.1× 88 3.0k
G. Ottaviani Italy 38 4.0k 1.4× 2.6k 0.9× 1.5k 1.0× 216 0.5× 645 1.4× 122 5.5k
W. L. Bond United States 24 1.6k 0.6× 1.6k 0.6× 1.7k 1.1× 268 0.6× 558 1.2× 44 3.8k

Countries citing papers authored by J. S. Blakemore

Since Specialization
Citations

This map shows the geographic impact of J. S. Blakemore's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. S. Blakemore with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. S. Blakemore more than expected).

Fields of papers citing papers by J. S. Blakemore

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. S. Blakemore. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. S. Blakemore. The network helps show where J. S. Blakemore may publish in the future.

Co-authorship network of co-authors of J. S. Blakemore

This figure shows the co-authorship network connecting the top 25 collaborators of J. S. Blakemore. A scholar is included among the top collaborators of J. S. Blakemore based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J. S. Blakemore. J. S. Blakemore is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Blakemore, J. S., et al.. (1993). Melt-grown p-type GaAs with iron doping. Journal of Applied Physics. 73(11). 7416–7421. 4 indexed citations
2.
Sargent, L.J., et al.. (1990). Properties of semi-insulating GaAs grown by a vertical molten zone method. Journal of Applied Physics. 67(2). 852–858. 2 indexed citations
3.
Sargent, L.J., et al.. (1988). EL2 distributions in vertical gradient freeze GaAs crystals. Journal of Applied Physics. 63(12). 5689–5693. 8 indexed citations
4.
Blakemore, J. S.. (1987). Mid-infrared dispersion of the refractive index and reflectivity for GaAs. Journal of Applied Physics. 62(11). 4528–4532. 18 indexed citations
5.
Kremer, R. E. & J. S. Blakemore. (1986). Comparison of approaches for achieving very high speed in GaAs VLSI devices. Superlattices and Microstructures. 2(1). 69–73. 1 indexed citations
6.
Blakemore, J. S., et al.. (1985). GaAs field-effect transistor properties, as influenced by the local concentrations of midgap native donors and dislocations. Applied Physics Letters. 47(6). 602–604. 43 indexed citations
7.
Look, D. C. & J. S. Blakemore. (1984). Semi-Insulating III-V Materials: Kah-Nee-Ta 1984. Journal of Bioresource Management. 52 indexed citations
8.
Balachandran, U., et al.. (1983). Conductivity of Strongly Reduced and Quenched Ceramic La‐Doped SrTiO 3 Oregon Graduate Center, Beaverton, OR 97006. Journal of the American Ceramic Society. 66(2). 9 indexed citations
9.
Blakemore, J. S.. (1982). Semiconducting and other major properties of gallium arsenide. Journal of Applied Physics. 53(10). R123–R181. 1968 indexed citations breakdown →
10.
Balachandran, U., et al.. (1982). Electronic conduction in quenched ceramic samples of highly reduced lanthanum doped SrTiO3. Materials Research Bulletin. 17(2). 199–208. 23 indexed citations
11.
Blakemore, J. S.. (1981). Compensator inhomogeneity in an extrinsic semiconductor. Journal of Applied Physics. 52(2). 840–847. 5 indexed citations
12.
Blakemore, J. S.. (1980). Improved characterization of impurities in semiconductors from thermal carrier measurements. Journal of Applied Physics. 51(2). 1054–1059. 3 indexed citations
13.
Blakemore, J. S., et al.. (1972). Transport and Photoelectrical Properties of Gallium Arsenide Containing Deep Acceptors. Journal of Applied Physics. 43(5). 2242–2246. 51 indexed citations
14.
Blakemore, J. S., et al.. (1970). Computer Fitting of Germanium Thermometer Characteristics. Review of Scientific Instruments. 41(6). 835–842. 15 indexed citations
15.
Blakemore, J. S.. (1970). The Portevin-Le Chatelier Effect in hydrogenated nickel. Metallurgical Transactions. 1(1). 145–149. 46 indexed citations
16.
Blakemore, J. S., et al.. (1968). Photoconductivity Associated with Indium Acceptors in Silicon. Physical Review. 173(3). 767–774. 16 indexed citations
17.
Blakemore, J. S.. (1967). Radiative Capture by Impurities in Semiconductors. Physical Review. 163(3). 809–815. 20 indexed citations
18.
Blakemore, J. S.. (1962). Design of Germanium for Thermometric Applications. Review of Scientific Instruments. 33(1). 106–112. 12 indexed citations
19.
Blakemore, J. S.. (1958). The Fermi Level in Germanium at High Temperatures. Proceedings of the Physical Society. 71(4). 692–694. 7 indexed citations
20.
Blakemore, J. S.. (1952). The Parameters of Partially Degenerate Semiconductors. Proceedings of the Physical Society Section A. 65(6). 460–461. 14 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

Breakdown of academic impact, for papers by H. J. Levinstein Breakdown of academic impact, for papers by T. S. Moss Breakdown of academic impact, for papers by Otfried Madelung Breakdown of academic impact, for papers by Benjamin Lax Breakdown of academic impact, for papers by A. K. Ramdas Breakdown of academic impact, for papers by P. N. Keating Breakdown of academic impact, for papers by Jun‐ichi Nishizawa Breakdown of academic impact, for papers by E. G. Spencer Breakdown of academic impact, for papers by G. Ottaviani Breakdown of academic impact, for papers by W. L. Bond
Rankless by CCL
2026