G. Neuhold

499 total citations
21 papers, 438 citations indexed

About

G. Neuhold is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Surfaces, Coatings and Films. According to data from OpenAlex, G. Neuhold has authored 21 papers receiving a total of 438 indexed citations (citations by other indexed papers that have themselves been cited), including 18 papers in Atomic and Molecular Physics, and Optics, 12 papers in Electrical and Electronic Engineering and 8 papers in Surfaces, Coatings and Films. Recurrent topics in G. Neuhold's work include Surface and Thin Film Phenomena (11 papers), Electron and X-Ray Spectroscopy Techniques (8 papers) and Semiconductor materials and devices (7 papers). G. Neuhold is often cited by papers focused on Surface and Thin Film Phenomena (11 papers), Electron and X-Ray Spectroscopy Techniques (8 papers) and Semiconductor materials and devices (7 papers). G. Neuhold collaborates with scholars based in Germany, United Kingdom and Switzerland. G. Neuhold's co-authors include K. Horn, J. J. Paggel, Stefan Zollner, Henrik Haak, M. Cardona, M. Garriga, J. Kircher, J. Humlı́ček, Wolfgang Theis and D. A. Evans and has published in prestigious journals such as Physical Review Letters, Physical review. B, Condensed matter and Journal of Applied Physics.

In The Last Decade

G. Neuhold

21 papers receiving 430 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
G. Neuhold Germany 10 322 164 163 94 62 21 438
M. M. R. Evans United States 12 363 1.1× 147 0.9× 139 0.9× 65 0.7× 75 1.2× 21 458
K. Garrison United States 9 231 0.7× 80 0.5× 126 0.8× 75 0.8× 54 0.9× 12 315
G. E. Franklin United States 12 467 1.5× 112 0.7× 197 1.2× 72 0.8× 124 2.0× 17 547
R.E. Perälä Finland 14 390 1.2× 145 0.9× 157 1.0× 143 1.5× 54 0.9× 44 487
J. Viernow United States 9 393 1.2× 193 1.2× 221 1.4× 68 0.7× 35 0.6× 10 539
M. Ozeki Japan 12 364 1.1× 130 0.8× 396 2.4× 105 1.1× 55 0.9× 36 487
F. Voillot France 14 344 1.1× 189 1.2× 288 1.8× 44 0.5× 40 0.6× 36 453
E. S. Hirschorn United States 9 386 1.2× 148 0.9× 185 1.1× 33 0.4× 69 1.1× 18 472
C. Domke Germany 12 366 1.1× 127 0.8× 291 1.8× 40 0.4× 28 0.5× 15 479
G. W. Anderson Canada 12 282 0.9× 108 0.7× 160 1.0× 26 0.3× 61 1.0× 18 352

Countries citing papers authored by G. Neuhold

Since Specialization
Citations

This map shows the geographic impact of G. Neuhold's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by G. Neuhold with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites G. Neuhold more than expected).

Fields of papers citing papers by G. Neuhold

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by G. Neuhold. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by G. Neuhold. The network helps show where G. Neuhold may publish in the future.

Co-authorship network of co-authors of G. Neuhold

This figure shows the co-authorship network connecting the top 25 collaborators of G. Neuhold. A scholar is included among the top collaborators of G. Neuhold based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with G. Neuhold. G. Neuhold is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Wolfframm, D., D. A. Evans, G. Neuhold, & K. Horn. (2000). Gold and silver Schottky barriers on ZnS(110). Journal of Applied Physics. 87(8). 3905–3911. 7 indexed citations
2.
Barman, S. R., Sunan Ding, G. Neuhold, et al.. (1998). Electronic band structure of zinc blende. Physical review. B, Condensed matter. 58(11). 7053–7058. 6 indexed citations
3.
Magnusson, Karin, G. Neuhold, K. Horn, & D. A. Evans. (1998). Electronic band structure of cubic CdSe determined by angle-resolved photoemission: Cd4dand valence-level states. Physical review. B, Condensed matter. 57(15). 8945–8950. 7 indexed citations
4.
Neuhold, G., S. R. Barman, K. Horn, et al.. (1998). Enhanced surface metallic density of states in icosahedral quasicrystals. Physical review. B, Condensed matter. 58(2). 734–738. 38 indexed citations
5.
Paggel, J. J., G. Neuhold, Henrik Haak, & K. Horn. (1998). Growth morphology and electronic structure of Na films on Si(111)-(7×7) and Si(111)-Na(3×1). Surface Science. 414(1-2). 221–235. 21 indexed citations
6.
Neuhold, G., Ludwig Bartels, J. J. Paggel, & K. Horn. (1997). Thickness-dependent morphologies of thin Ag films on GaAs(110) as revealed by LEED and STM. Surface Science. 376(1-3). 1–12. 26 indexed citations
7.
Chassé, T., G. Neuhold, J. J. Paggel, & K. Horn. (1997). Investigation of the Sn/GaP(110) interface by core level photoemission: interface reaction, growth morphology and surface photovoltage effects. Applied Surface Science. 115(4). 326–335. 3 indexed citations
8.
Neuhold, G. & K. Horn. (1997). Depopulation of the Ag(111) Surface State Assigned to Strain in Epitaxial Films. Physical Review Letters. 78(7). 1327–1330. 107 indexed citations
9.
Neuhold, G., et al.. (1996). Observation of a Cs-induced state in the band gap of GaP(110): Alkali-metal bonding and Fermi-level pinning. Physical review. B, Condensed matter. 54(12). 8623–8626. 5 indexed citations
10.
Wolfframm, D., Paul Bailey, D. A. Evans, G. Neuhold, & K. Horn. (1996). Zinc sulfide on GaP(110): Characterization of epitaxial growth and electronic structure. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 14(3). 844–848. 6 indexed citations
11.
Ding, Sunan, G. Neuhold, J. H. Weaver, et al.. (1996). Electronic structure of cubic gallium nitride films grown on GaAs. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 14(3). 819–824. 44 indexed citations
12.
Neuhold, G., et al.. (1995). Evidence for surface derelaxation induced by metals on III-V compound semiconductors: Cs/InP(110). Surface Science. 331-333. 528–533. 4 indexed citations
13.
Paggel, J. J., G. Neuhold, Henrik Haak, & K. Horn. (1995). Scanning-tunneling-microscopy and photoemission study of an alkali-metal-induced structural phase transition: Si(111)-(7×7) into Si(111)-Na(3×1). Physical review. B, Condensed matter. 52(8). 5813–5823. 40 indexed citations
14.
Neuhold, G., K. Horn, Karin Magnusson, & D. A. Evans. (1995). Zincblende–CdSe on GaSb(110): Characterization of epitaxial growth and electronic structure. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 13(3). 666–671. 11 indexed citations
15.
Chassé, T., G. Neuhold, & K. Horn. (1995). Investigation of the As/InP(110) interface by high resolution photoemission. Surface Science. 331-333. 511–516. 15 indexed citations
16.
Paggel, J. J., et al.. (1994). Photoemission study of the Cs⧸GaP(110) interface at low temperatures. Surface Science. 307-309. 295–302. 6 indexed citations
17.
Neuhold, G., L. Ley, Jordi Fraxedas, et al.. (1994). Conduction-band states and surface core excitons in InSb(110) and other III-V compounds. Physical review. B, Condensed matter. 50(11). 7384–7388. 2 indexed citations
18.
Zollner, Stefan, M. Garriga, J. Kircher, et al.. (1993). Temperature dependence of the dielectric function and the interband critical-point parameters of GaP. Physical review. B, Condensed matter. 48(11). 7915–7929. 69 indexed citations
19.
Neuhold, G., L. Ley, Jordi Fraxedas, et al.. (1993). Conduction-band states in GaSb(110) and GaP(110) at the Brillouin-zone center. Physical review. B, Condensed matter. 48(19). 14301–14308. 3 indexed citations
20.
Neuhold, G., L. Ley, Jordi Fraxedas, et al.. (1993). Determination of conduction-band states in GaAs(110), InP(110), and InAs(110). Physical review. B, Condensed matter. 47(19). 12625–12635. 7 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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