D. Venables

743 total citations
44 papers, 549 citations indexed

About

D. Venables is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Biomedical Engineering. According to data from OpenAlex, D. Venables has authored 44 papers receiving a total of 549 indexed citations (citations by other indexed papers that have themselves been cited), including 36 papers in Electrical and Electronic Engineering, 18 papers in Atomic and Molecular Physics, and Optics and 6 papers in Biomedical Engineering. Recurrent topics in D. Venables's work include Silicon and Solar Cell Technologies (19 papers), Integrated Circuits and Semiconductor Failure Analysis (15 papers) and Semiconductor materials and devices (14 papers). D. Venables is often cited by papers focused on Silicon and Solar Cell Technologies (19 papers), Integrated Circuits and Semiconductor Failure Analysis (15 papers) and Semiconductor materials and devices (14 papers). D. Venables collaborates with scholars based in United States, Germany and Taiwan. D. Venables's co-authors include K. S. Jones, D. M. Maher, David C. Collins, Eric M. Vogel, John R. Hauser, J. J. Wortman, Mingzhen Xu, Ranju Venables, W.K. Henson and Khaled Ahmed and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

D. Venables

39 papers receiving 523 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
D. Venables United States 12 492 171 115 99 97 44 549
Shigemitsu Maruno Japan 13 404 0.8× 209 1.2× 232 2.0× 42 0.4× 57 0.6× 53 531
D. Loretto United States 10 233 0.5× 283 1.7× 92 0.8× 35 0.4× 96 1.0× 22 383
B. van Someren Netherlands 8 156 0.3× 98 0.6× 81 0.7× 152 1.5× 192 2.0× 22 389
Naoaki Aizaki Japan 14 584 1.2× 316 1.8× 259 2.3× 57 0.6× 93 1.0× 37 709
N. Natsuaki Japan 13 555 1.1× 184 1.1× 102 0.9× 207 2.1× 27 0.3× 48 647
E. F. Krimmel Germany 12 295 0.6× 55 0.3× 131 1.1× 220 2.2× 45 0.5× 43 383
Dan Herr United States 10 206 0.4× 97 0.6× 131 1.1× 65 0.7× 76 0.8× 68 389
Patricia G. Blauner United States 10 243 0.5× 37 0.2× 87 0.8× 188 1.9× 117 1.2× 30 374
Yoshihiko Yuba Japan 11 312 0.6× 150 0.9× 60 0.5× 132 1.3× 60 0.6× 52 368
Naruhisa Miura Japan 17 769 1.6× 248 1.5× 127 1.1× 37 0.4× 26 0.3× 60 935

Countries citing papers authored by D. Venables

Since Specialization
Citations

This map shows the geographic impact of D. Venables's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by D. Venables with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites D. Venables more than expected).

Fields of papers citing papers by D. Venables

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by D. Venables. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by D. Venables. The network helps show where D. Venables may publish in the future.

Co-authorship network of co-authors of D. Venables

This figure shows the co-authorship network connecting the top 25 collaborators of D. Venables. A scholar is included among the top collaborators of D. Venables based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with D. Venables. D. Venables is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Hempel, Martin, et al.. (2015). Long-Term Aging and Quick Stress Testing of 980-nm Single-Spatial Mode Lasers. Journal of Lightwave Technology. 33(21). 4450–4456. 3 indexed citations
2.
Hempel, Martin, et al.. (2015). Analysis of 980nm emitting single-spatial mode diode lasers at high power levels by complementary imaging techniques. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 9348. 93480N–93480N. 3 indexed citations
3.
Cheng, Ming-Te, L. M. F. Chirovsky, C. M. Ciesla, et al.. (2007). A Non-Oxide 850 nm VCSEL for High-Speed Datacom Applications. 1–3. 1 indexed citations
4.
Diebold, Alain C., D. Venables, Yves J. Chabal, et al.. (1999). Characterization and production metrology of thin transistor gate oxide films. Materials Science in Semiconductor Processing. 2(2). 103–147. 44 indexed citations
5.
Henson, W.K., Khaled Ahmed, Eric M. Vogel, et al.. (1999). Estimating oxide thickness of tunnel oxides down to 1.4 nm using conventional capacitance-voltage measurements on MOS capacitors. IEEE Electron Device Letters. 20(4). 179–181. 131 indexed citations
6.
Venables, D., et al.. (1998). Factors affecting two-dimensional dopant profiles obtained by transmission electron microscopy of etched p-n junctions in Si. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 16(1). 471–475. 5 indexed citations
7.
Venables, D.. (1998). Scanning Electron Microscopy of Dopants in Semiconductors. Microscopy and Microanalysis. 4(S2). 644–645.
8.
Venables, D., et al.. (1998). Secondary electron imaging as a two-dimensional dopant profiling technique: Review and update. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 16(1). 362–366. 68 indexed citations
9.
Ukraintsev, Vladimir A., R. S. List, Mi-Chang Chang, et al.. (1998). Dopant characterization round-robin study performed on two-dimensional test structures fabricated at Texas Instruments. 741–745. 1 indexed citations
10.
Venables, D., et al.. (1997). The Role of Vacancies and Interstitials in Transient Enhanced Diffusion of Arsenic Implanted into Silicon. MRS Proceedings. 469. 3 indexed citations
11.
Krishnamoorthy, V., et al.. (1997). Effect of End-of-Range Defects, Arsenic Clustering and Precipitation on Transient Enhanced Diffusion in As+ Implanted Si. MRS Proceedings. 469. 1 indexed citations
12.
Venables, D., et al.. (1997). Mapping two-dimensional arsenic distributions in silicon using dopant-selective chemical etching technique. Journal of Applied Physics. 82(11). 5811–5815. 5 indexed citations
13.
Hu, Yi, et al.. (1995). A study of silicon epitaxial growth on silicon substrates exposed to Ar electron cyclotron resonance plasmas. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 13(4). 1442–1446. 3 indexed citations
14.
Dietz, N., et al.. (1995). Migration-enhanced pulsed chemical beam epitaxy of GaP on Si(001). Journal of Crystal Growth. 150. 691–695. 15 indexed citations
15.
Venables, D., et al.. (1993). Stacking fault pyramid formation and energetics in silicon-on-insulator material formed by multiple cycles of oxygen implantation and annealing. Applied Physics Letters. 63(24). 3330–3332. 5 indexed citations
16.
Venables, D. & K. S. Jones. (1993). Defect formation in high dose oxygen implanted silicon. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 74(1-2). 65–69. 14 indexed citations
17.
Venables, D., et al.. (1991). Strain Relief and Defect Formation in High Dose Oxygen Implanted Silicon. MRS Proceedings. 235. 12 indexed citations
18.
Jones, K. S. & D. Venables. (1991). The effect of implant energy, dose, and dynamic annealing on end-of-range damage in Ge+-implanted silicon. Journal of Applied Physics. 69(5). 2931–2937. 57 indexed citations
19.
Jones, K. S., S.G. Prussin, & D. Venables. (1988). The Effect of Implant Species on the Stability of Ion Implantation Damage. MRS Proceedings. 100. 3 indexed citations
20.
Langan, Timothy, et al.. (1988). Simulation of the Crack Tip Chemistry of Stress Corrosion Cracks in 7XXX Aluminum Powder Alloys. CORROSION. 44(3). 165–169. 5 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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