J. Auleytner

444 total citations
92 papers, 331 citations indexed

About

J. Auleytner is a scholar working on Electrical and Electronic Engineering, Computational Mechanics and Materials Chemistry. According to data from OpenAlex, J. Auleytner has authored 92 papers receiving a total of 331 indexed citations (citations by other indexed papers that have themselves been cited), including 41 papers in Electrical and Electronic Engineering, 39 papers in Computational Mechanics and 32 papers in Materials Chemistry. Recurrent topics in J. Auleytner's work include Ion-surface interactions and analysis (30 papers), Silicon and Solar Cell Technologies (27 papers) and Integrated Circuits and Semiconductor Failure Analysis (16 papers). J. Auleytner is often cited by papers focused on Ion-surface interactions and analysis (30 papers), Silicon and Solar Cell Technologies (27 papers) and Integrated Circuits and Semiconductor Failure Analysis (16 papers). J. Auleytner collaborates with scholars based in Poland, Czechia and Ukraine. J. Auleytner's co-authors include D. Klinger, A. Ślebarski, K. Ławniczak‐Jabłońska, M. Toulemonde, M. F. Beaufort, J. Dural, C. Blanchard, J. F. Hamet, G. Nouet and E. Zipper and has published in prestigious journals such as Physical review. B, Condensed matter, Journal of Applied Physics and Surface Science.

In The Last Decade

J. Auleytner

84 papers receiving 312 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
J. Auleytner Poland 8 186 152 131 78 42 92 331
A.P. Pogany Australia 10 210 1.1× 115 0.8× 164 1.3× 109 1.4× 50 1.2× 30 421
A. V. Drigo Italy 11 183 1.0× 163 1.1× 193 1.5× 118 1.5× 20 0.5× 23 373
I. Jenčič Slovenia 9 205 1.1× 154 1.0× 184 1.4× 83 1.1× 34 0.8× 20 376
R. Shimizu Japan 10 160 0.9× 192 1.3× 96 0.7× 47 0.6× 38 0.9× 23 312
J. Corno France 9 112 0.6× 120 0.8× 118 0.9× 197 2.5× 48 1.1× 26 389
Karuppanan Sekar India 11 282 1.5× 95 0.6× 204 1.6× 224 2.9× 83 2.0× 40 478
R. Danielou France 12 265 1.4× 89 0.6× 290 2.2× 114 1.5× 14 0.3× 25 432
P. D. Augustus United Kingdom 14 315 1.7× 56 0.4× 135 1.0× 273 3.5× 36 0.9× 27 450
G. Langouche Belgium 11 136 0.7× 78 0.5× 103 0.8× 235 3.0× 28 0.7× 39 345
R. Gröetzschel Germany 12 200 1.1× 97 0.6× 149 1.1× 151 1.9× 19 0.5× 41 337

Countries citing papers authored by J. Auleytner

Since Specialization
Citations

This map shows the geographic impact of J. Auleytner's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Auleytner with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Auleytner more than expected).

Fields of papers citing papers by J. Auleytner

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Auleytner. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Auleytner. The network helps show where J. Auleytner may publish in the future.

Co-authorship network of co-authors of J. Auleytner

This figure shows the co-authorship network connecting the top 25 collaborators of J. Auleytner. A scholar is included among the top collaborators of J. Auleytner based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J. Auleytner. J. Auleytner is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Wierzchowski, W., et al.. (2004). Synchrotron X-ray diffraction studies of silicon implanted with high-energy Ar ions after thermal annealing. Journal of Alloys and Compounds. 382(1-2). 146–152. 1 indexed citations
2.
Auleytner, J.. (2002). Instytut Spraw Społecznych (1931-1939). Polityka Społeczna. 19–22.
3.
Auleytner, J., et al.. (2002). Nanostructure of Thin Gold Films Investigated by Means of Atomic Force Microscopy and X-Ray Reflectometry Methods. Acta Physica Polonica A. 102(2). 289–294. 1 indexed citations
4.
Auleytner, J.. (2001). Polskie Towarzystwo Polityki Społecznej w latach 1924-1948 : Z historii polityki społecznej. Polityka Społeczna. 20–24. 1 indexed citations
5.
Auleytner, J., et al.. (2000). Sytuacja dzieci obszaru pogranicza wschodniego. Wiadomości Statystyczne The Polish Statistician. 27–31. 1 indexed citations
6.
Dmitruk, Igor, et al.. (1999). Comparative studies of Si single crystal surface disorder by using various methods of electromagnetic wave scattering. Journal of Alloys and Compounds. 286(1-2). 302–308. 1 indexed citations
7.
Cobianu, C., Samuel A. Nastase, Costel Flueraru, et al.. (1999). Phase and surface roughness evolution for as-deposited LPCVD silicon films. Journal de Physique IV (Proceedings). 9(PR8). Pr8–1083. 7 indexed citations
8.
Pełka, J.B., J. Auleytner, J. Z. Domagała, Z. Werner, & M. Janik‐Czachor. (1999). Study of near-surface layers modified by ion implantation in Si wafers by grazing incidence X-ray reflectometry. Journal of Alloys and Compounds. 286(1-2). 337–342. 1 indexed citations
9.
Auleytner, J., et al.. (1997). X-Ray Structure Perfection Diagnostics of Slightly Distorted Silicon Crystals in the Bragg Case of Diffraction. Acta Physica Polonica A. 91(5). 981–985. 2 indexed citations
10.
Auleytner, J.. (1989). X-ray and electromicroscopic investigation of defects induced in silicon by 42 MeV/n Kr ions. Radiation effects and defects in solids. 110(1-2). 207–210.
11.
Auleytner, J., et al.. (1988). Extended x-ray bremsstrahlung isochromat of Pd. Physical review. B, Condensed matter. 37(11). 6251–6255. 8 indexed citations
12.
Auleytner, J., et al.. (1982). X‐Ray topographic study of the influence of thermal annealing on the bending of 49BF2+‐implanted Si wafers. Crystal Research and Technology. 17(9). 1167–1175. 1 indexed citations
13.
Wieluński, M., et al.. (1982). Influence of non‐uniformity of laser beam intensity on the surface layer structure of implanted silicon crystals. Crystal Research and Technology. 17(2). 197–203. 2 indexed citations
14.
Auleytner, J., et al.. (1980). The influence of the dislocation density on the sulphur segregation at the Ni(110) surface in the course of heating. Kristall und Technik. 15(3). 305–312. 2 indexed citations
15.
Ślebarski, A., et al.. (1979). Soft X-Ray Emission Spectra of Aluminium and Manganese from Gd(Al1−xMnx)2 Intermetallic Compounds. physica status solidi (a). 54(1). 79–83. 6 indexed citations
16.
Auleytner, J., et al.. (1976). Changes of X-ray topographic contrast due to annealing of boron-implanted silicon. physica status solidi (a). 36(1). 209–215. 7 indexed citations
17.
Auleytner, J.. (1967). X-ray methods in the study of defects in single crystals. Pergamon Press eBooks. 9 indexed citations
18.
Auleytner, J., et al.. (1967). Investigation of the Real Structures of Cds Crystals in Connection with the Shift of Exciton Lines. physica status solidi (b). 24(2). 7 indexed citations
19.
Auleytner, J., et al.. (1963). Schwenkfilm‐Methode und ihre Anwendung bei Untersuchungen dynamischer Effekte der Röntgenstrahlstreuung im Kristallgitter. physica status solidi (b). 3(10). 1846–1850. 4 indexed citations
20.
Auleytner, J.. (1958). DETERMINATION OF THE ORIENTATION OF MOSAIC BLOCKS BY MEANS OF A FINE-FOCUS X-RAY TUBE. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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