A. Vapaille

995 total citations · 1 hit paper
16 papers, 840 citations indexed

About

A. Vapaille is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, A. Vapaille has authored 16 papers receiving a total of 840 indexed citations (citations by other indexed papers that have themselves been cited), including 15 papers in Electrical and Electronic Engineering, 12 papers in Atomic and Molecular Physics, and Optics and 6 papers in Materials Chemistry. Recurrent topics in A. Vapaille's work include Semiconductor materials and interfaces (12 papers), Silicon and Solar Cell Technologies (8 papers) and Semiconductor materials and devices (7 papers). A. Vapaille is often cited by papers focused on Semiconductor materials and interfaces (12 papers), Silicon and Solar Cell Technologies (8 papers) and Semiconductor materials and devices (7 papers). A. Vapaille collaborates with scholars based in France. A. Vapaille's co-authors include R. Castagné, C. Barret, P. Hesto, J. Gutiérrez, J.C. Dupuy and F. Meyer and has published in prestigious journals such as Journal of Applied Physics, Surface Science and Thin Solid Films.

In The Last Decade

A. Vapaille

16 papers receiving 786 citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Description of the SiO2Si interface properties by means of very low frequency MOS capacitance measurements

1971 444 citations R. Castagné, A. Vapaille Surface Science profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
A. Vapaille France	10	798	587	195	52	41	16	840
H. L. Evans United States	11	474 0.6×	293 0.5×	132 0.7×	27 0.5×	22 0.5×	25	519
F.D. King Canada	8	579 0.7×	461 0.8×	180 0.9×	82 1.6×	38 0.9×	14	674
K.H. Zaininger United States	15	587 0.7×	225 0.4×	189 1.0×	34 0.7×	47 1.1×	31	652
T. Sudersena Rao Canada	10	284 0.4×	187 0.3×	168 0.9×	94 1.8×	74 1.8×	39	410
S. Brehme Germany	13	514 0.6×	212 0.4×	376 1.9×	61 1.2×	36 0.9×	36	589
S. Guerri Italy	11	340 0.4×	199 0.3×	128 0.7×	40 0.8×	45 1.1×	25	444
R R Varma United Kingdom	11	367 0.5×	287 0.5×	124 0.6×	32 0.6×	20 0.5×	15	449
B. Gruzza France	12	434 0.5×	385 0.7×	104 0.5×	41 0.8×	22 0.5×	31	478
J.H. Mazur United States	7	266 0.3×	224 0.4×	98 0.5×	51 1.0×	26 0.6×	19	351
Antonio Rotondaro United States	16	927 1.2×	150 0.3×	223 1.1×	49 0.9×	75 1.8×	54	974

Countries citing papers authored by A. Vapaille

Since Specialization

Citations

This map shows the geographic impact of A. Vapaille's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. Vapaille with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. Vapaille more than expected).

Fields of papers citing papers by A. Vapaille

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. Vapaille. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. Vapaille. The network helps show where A. Vapaille may publish in the future.

Co-authorship network of co-authors of A. Vapaille

This figure shows the co-authorship network connecting the top 25 collaborators of A. Vapaille. A scholar is included among the top collaborators of A. Vapaille based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with A. Vapaille. A. Vapaille is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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16 of 16 papers shown

1.

Vapaille, A., et al.. (1993). Antimony δ doping by low energy implantation in molecular-beam epitaxy Si layers. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 11(5). 1793–1797. 1 indexed citations

2.

Gutiérrez, J., et al.. (1990). Steep doping profiles obtained by low-energy implantation of arsenic in silicon MBE layers. Thin Solid Films. 184(1-2). 37–45. 3 indexed citations

3.

Gutiérrez, J., et al.. (1987). Silicon molecular beam epitaxy: Use of a microion source for doping by low-energy implantation. Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena. 5(2). 515–517. 4 indexed citations

4.

Vapaille, A., et al.. (1986). Instabilities in silicon devices : silicon passivation and related instabilities. Elsevier eBooks. 77 indexed citations

5.

Barret, C., et al.. (1983). Study of metal-semiconductor interface states using Schottky capacitance spectroscopy. Journal of Physics C Solid State Physics. 16(12). 2421–2438. 46 indexed citations

6.

Barret, C., et al.. (1983). A study of interface states in metal-GaAs 〈110〉 structures by Schottky capacitance spectroscopy. Journal of Applied Physics. 54(11). 6474–6480. 49 indexed citations

7.

Barret, C., et al.. (1983). Corrélations entre méthode de préparation, hauteur de barrière et états d'interface dans les contacts métal-GaAs. Revue de Physique Appliquée. 18(11). 695–702. 2 indexed citations

8.

Barret, C. & A. Vapaille. (1979). Interface states in a cleaved metal-silicon junction. Journal of Applied Physics. 50(6). 4217–4222. 39 indexed citations

9.

Barret, C. & A. Vapaille. (1978). Study of PtGaAs interface states. Solid-State Electronics. 21(10). 1209–1212. 16 indexed citations

10.

Barret, C. & A. Vapaille. (1976). Interfacial states spectrum of a metal-silicon junction. Solid-State Electronics. 19(1). 73–75. 46 indexed citations

11.

Barret, C. & A. Vapaille. (1975). Determination of the density and the relaxation time of silicon-metal interfacial states. Solid-State Electronics. 18(1). 25–27. 54 indexed citations

12.

Meyer, F., et al.. (1974). Effects of crystal orientation on the state density at the interface between anodically grown silicon dioxide and silicon. Surface Science. 41(2). 595–600. 2 indexed citations

13.

Castagné, R., P. Hesto, & A. Vapaille. (1973). Surface conductivity of the insulator of an MIS or MIM device. Thin Solid Films. 17(3). 253–264. 17 indexed citations

14.

Castagné, R. & A. Vapaille. (1971). Aspects particuliers des courbes C(V) et de la densite apparente d'etats a l'interface SiO2 thermique — Si des structures mos d'orientation superficielle 〈111〉.. Solid State Communications. 9(16). 1347–1351. 1 indexed citations

15.

Castagné, R. & A. Vapaille. (1971). Description of the SiO2Si interface properties by means of very low frequency MOS capacitance measurements. Surface Science. 28(1). 157–193. 444 indexed citations breakdown →

16.

Castagné, R. & A. Vapaille. (1970). Apparent interface state density introduced by the spatial fluctuations of surface potential in an m.o.s. structure. Electronics Letters. 6(22). 691–694. 39 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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