H. M. Macksey

704 total citations
51 papers, 543 citations indexed

About

H. M. Macksey is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics. According to data from OpenAlex, H. M. Macksey has authored 51 papers receiving a total of 543 indexed citations (citations by other indexed papers that have themselves been cited), including 48 papers in Electrical and Electronic Engineering, 29 papers in Atomic and Molecular Physics, and Optics and 16 papers in Condensed Matter Physics. Recurrent topics in H. M. Macksey's work include Radio Frequency Integrated Circuit Design (26 papers), Semiconductor Quantum Structures and Devices (24 papers) and GaN-based semiconductor devices and materials (16 papers). H. M. Macksey is often cited by papers focused on Radio Frequency Integrated Circuit Design (26 papers), Semiconductor Quantum Structures and Devices (24 papers) and GaN-based semiconductor devices and materials (16 papers). H. M. Macksey collaborates with scholars based in United States, Russia and Uzbekistan. H. M. Macksey's co-authors include N. Holonyak, Russell D. Dupuis, H.Q. Tserng, D. R. Scifres, Joe C. Campbell, M. G. Craford, W.R. Wisseman, G. G. Kleiman, W. O. Groves and C. B. Duke and has published in prestigious journals such as Physical Review Letters, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

H. M. Macksey

47 papers receiving 490 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
H. M. Macksey United States	14	466	370	115	71	43	51	543
T.J. Zamerowski United States	12	366 0.8×	352 1.0×	37 0.3×	80 1.1×	31 0.7×	18	454
H. Shen United States	12	499 1.1×	552 1.5×	93 0.8×	110 1.5×	30 0.7×	22	624
B. de Crémoux France	16	637 1.4×	556 1.5×	41 0.4×	110 1.5×	61 1.4×	48	742
Y. F. Lin United States	11	541 1.2×	451 1.2×	50 0.4×	98 1.4×	85 2.0×	21	643
Steven Groves United States	6	286 0.6×	356 1.0×	47 0.4×	127 1.8×	19 0.4×	6	459
D. L. Keune United States	19	693 1.5×	705 1.9×	112 1.0×	185 2.6×	77 1.8×	51	854
J. Komeno Japan	17	550 1.2×	586 1.6×	117 1.0×	192 2.7×	13 0.3×	60	727
R. E. Mallard Canada	12	438 0.9×	390 1.1×	86 0.7×	122 1.7×	17 0.4×	38	524
Avid Kamgar United States	15	517 1.1×	460 1.2×	87 0.8×	168 2.4×	18 0.4×	43	751
A. G. Thompson United States	8	289 0.6×	336 0.9×	72 0.6×	156 2.2×	12 0.3×	11	469

Countries citing papers authored by H. M. Macksey

Since Specialization

Citations

This map shows the geographic impact of H. M. Macksey's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by H. M. Macksey with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites H. M. Macksey more than expected).

Fields of papers citing papers by H. M. Macksey

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by H. M. Macksey. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by H. M. Macksey. The network helps show where H. M. Macksey may publish in the future.

Co-authorship network of co-authors of H. M. Macksey

This figure shows the co-authorship network connecting the top 25 collaborators of H. M. Macksey. A scholar is included among the top collaborators of H. M. Macksey based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with H. M. Macksey. H. M. Macksey is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Macksey, H. M., et al.. (2005). S-Band GaAs Power FET. 82. 150–152. 1 indexed citations

Tserng, H.Q. & H. M. Macksey. (2005). Microwave GaAs Power FET Amplifiers with Lumped-Element Impedance Matching Networks. 78. 282–284. 3 indexed citations

Macksey, H. M., et al.. (1987). mm-wave monolithic GaAs power FET amplifiers. Microwave journal. 30. 153. 17 indexed citations

Macksey, H. M., et al.. (1987). Improved GaAs power FET Performance using Be Co-implantation. IEEE Electron Device Letters. 8(3). 116–117. 10 indexed citations

Macksey, H. M.. (1986). Optimization of the n⁺ledge channel structure for GaAs power FET's. IEEE Transactions on Electron Devices. 33(11). 1818–1824. 7 indexed citations

Macksey, H. M., et al.. (1985). Fabrication of n ⁺ ledge channel structure for GaAs FETs with a single lithography step. Electronics Letters. 21(21). 955–957. 5 indexed citations

Macksey, H. M.. (1981). Reliability evaluation of GaAs FETS. Defense Technical Information Center (DTIC). 1 indexed citations

Macksey, H. M., et al.. (1981). GaAs power FET for K-band operation. 27. 70–71. 7 indexed citations

Tserng, H.Q. & H. M. Macksey. (1980). Ultra-wideband medium-power GaAs MESFET amplifiers. 166–167. 2 indexed citations

10.

Tserng, H.Q., et al.. (1980). 2 W, 8–12 GHz GaAs f.e.t. amplifier. Electronics Letters. 16(17). 680–681. 1 indexed citations

11.

Macksey, H. M., et al.. (1979). Ion-implanted GaAs X-band power f.e.t.s. Electronics Letters. 15(18). 576–578. 4 indexed citations

12.

Macksey, H. M., et al.. (1977). GaAs power f.e.t.s with electron-beam-defined gates. Electronics Letters. 13(11). 312–313. 6 indexed citations

13.

Macksey, H. M., Don W. Shaw, & W.R. Wisseman. (1976). GaAs power f.e.t.s with semi-insulated gates. Electronics Letters. 12(8). 192–193. 7 indexed citations

14.

Tserng, H.Q., et al.. (1976). Microwave Power GaAs FET Amplifiers. IEEE Transactions on Microwave Theory and Techniques. 24(12). 936–943. 14 indexed citations

15.

Macksey, H. M., et al.. (1975). Fabrication processes for GaAs power FET's. 255–264. 2 indexed citations

16.

Holonyak, N., Russell D. Dupuis, H. M. Macksey, M. G. Craford, & W. O. Groves. (1972). Spontaneous and stimulated photoluminescence on nitrogen A-line and NN-pair line transitions in GaAs1−x Px : N. Journal of Applied Physics. 43(10). 4148–4153. 46 indexed citations

17.

Holonyak, N., D. R. Scifres, H. M. Macksey, & Russell D. Dupuis. (1972). Long-Wavelength Shift in the Operation of Lightly Doped Semiconductor Lasers. Journal of Applied Physics. 43(5). 2302–2306. 4 indexed citations

18.

Scifres, D. R., N. Holonyak, H. M. Macksey, et al.. (1972). Stimulated Emission and Laser Operation (cw, 77°K) of Direct and Indirect GaAs1−xPx on Nitrogen Isoelectronic Trap Transitions. Journal of Applied Physics. 43(5). 2368–2375. 8 indexed citations

19.

Macksey, H. M., et al.. (1972). Zn-diffused laser junctions in InxGa1−xAs and InAsxP1−x grown from In solution at constant temperature. Journal of Applied Physics. 43(8). 3533–3537. 13 indexed citations

20.

Burnham, R. D., et al.. (1971). Double Heterojunction AlGaAsP Quaternary Lasers. Applied Physics Letters. 19(2). 25–28. 18 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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