D. V. Yurasov

490 total citations
71 papers, 378 citations indexed

About

D. V. Yurasov is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, D. V. Yurasov has authored 71 papers receiving a total of 378 indexed citations (citations by other indexed papers that have themselves been cited), including 60 papers in Electrical and Electronic Engineering, 46 papers in Atomic and Molecular Physics, and Optics and 43 papers in Materials Chemistry. Recurrent topics in D. V. Yurasov's work include Silicon Nanostructures and Photoluminescence (39 papers), Photonic and Optical Devices (34 papers) and Semiconductor Quantum Structures and Devices (30 papers). D. V. Yurasov is often cited by papers focused on Silicon Nanostructures and Photoluminescence (39 papers), Photonic and Optical Devices (34 papers) and Semiconductor Quantum Structures and Devices (30 papers). D. V. Yurasov collaborates with scholars based in Russia, Japan and Germany. D. V. Yurasov's co-authors include А. В. Новиков, М. Н. Дроздов, Yu. N. Drozdov, М. В. Шалеев, P. A. Yunin, Z. F. Krasilnik, Artem N. Yablonskiy, Е. В. Скороходов, Д. Н. Лобанов and А. В. Антонов and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Optics Express.

In The Last Decade

D. V. Yurasov

67 papers receiving 370 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
D. V. Yurasov Russia 10 289 230 178 69 56 71 378
N. Taylor United States 11 380 1.3× 243 1.1× 147 0.8× 85 1.2× 27 0.5× 20 457
H.P. Zeindl Germany 12 283 1.0× 231 1.0× 144 0.8× 38 0.6× 61 1.1× 33 387
S. M. Newstead United Kingdom 11 305 1.1× 217 0.9× 134 0.8× 48 0.7× 50 0.9× 28 367
Nguyen Hong Ky Switzerland 15 430 1.5× 289 1.3× 79 0.4× 56 0.8× 32 0.6× 33 494
A. I. Nikiforov Russia 13 330 1.1× 503 2.2× 310 1.7× 119 1.7× 21 0.4× 58 622
G. M. Gur’yanov United States 12 313 1.1× 228 1.0× 85 0.5× 22 0.3× 34 0.6× 23 383
G. Hadjisavvas Greece 12 251 0.9× 145 0.6× 280 1.6× 153 2.2× 23 0.4× 19 419
A. Bärwolff Germany 13 347 1.2× 273 1.2× 63 0.4× 42 0.6× 66 1.2× 26 423
Andrew M. Carlin United States 12 241 0.8× 243 1.1× 101 0.6× 124 1.8× 26 0.5× 23 413
Cristina Santinelli France 10 305 1.1× 294 1.3× 78 0.4× 40 0.6× 25 0.4× 19 349

Countries citing papers authored by D. V. Yurasov

Since Specialization
Citations

This map shows the geographic impact of D. V. Yurasov's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by D. V. Yurasov with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites D. V. Yurasov more than expected).

Fields of papers citing papers by D. V. Yurasov

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by D. V. Yurasov. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by D. V. Yurasov. The network helps show where D. V. Yurasov may publish in the future.

Co-authorship network of co-authors of D. V. Yurasov

This figure shows the co-authorship network connecting the top 25 collaborators of D. V. Yurasov. A scholar is included among the top collaborators of D. V. Yurasov based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with D. V. Yurasov. D. V. Yurasov is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Yurasov, D. V., Sergey A. Dyakov, S. G. Tikhodeev, et al.. (2024). Symmetry breaking of bound states in the continuum in luminescence response of photonic crystal slabs with embedded Ge nanoislands. Applied Physics Letters. 125(2). 3 indexed citations
2.
Yablonskiy, Artem N., М. В. Степихова, D. V. Yurasov, et al.. (2024). Light-emitting diodes with Ge(Si) nanoislands embedded in photonic crystals. Nanotechnology. 35(16). 165203–165203. 2 indexed citations
3.
Yablonskiy, Artem N., В. А. Захаров, D. V. Yurasov, et al.. (2024). Silicon-based light-emitting transistor with Ge(Si) nanoislands embedded in a photonic crystal: Control of the spectrum and spatial distribution of the emission. Applied Physics Letters. 125(23).
4.
Dyakov, Sergey A., et al.. (2023). Purcell effect in two-dimensional photonic crystal slabs with triangular lattice. Physical review. B.. 108(15). 1 indexed citations
5.
Гусейнов, Д. В., et al.. (2023). Impact of spin-flip scattering on spin current and inverse Spin-Hall effect in silicon doped by bismuth, antimony or phosphorus. Physica B Condensed Matter. 674. 415551–415551.
6.
Yurasov, D. V., М. В. Степихова, М. В. Шалеев, et al.. (2023). Tuning the Luminescence Response of an Air-Hole Photonic Crystal Slab Using Etching Depth Variation. Nanomaterials. 13(10). 1678–1678. 4 indexed citations
7.
Fedotov, А.К., В.А. Скуратов, D. V. Yurasov, et al.. (2021). Influence of irradiation by Swift Heavy Ions (SHI) on electronic magnetotransport in Sb δ -layer in silicon. Physica E Low-dimensional Systems and Nanostructures. 138. 115047–115047. 1 indexed citations
8.
Nguyen, Van Hoang, А. В. Новиков, М. В. Шалеев, et al.. (2020). Impact of Ge deposition temperature on parameters of c-Si solar cells with surface texture formed by etching of Si using SiGe islands as a mask. Materials Science in Semiconductor Processing. 114. 105065–105065. 5 indexed citations
9.
Yurasov, D. V., А. В. Новиков, М. В. Шалеев, et al.. (2019). Impact of size distributions of Ge islands as etching masks for anisotropic etching on formation of anti-reflection structures. Japanese Journal of Applied Physics. 58(4). 45505–45505. 9 indexed citations
10.
Новиков, А. В., D. V. Yurasov, B. A. Andreev, et al.. (2019). Comparative Analysis of the Luminescence of Ge:Sb Layers Grown on Ge(001) and Si(001) Substrates. Semiconductors. 53(10). 1318–1323. 1 indexed citations
11.
Степихова, М. В., А. В. Новиков, Artem N. Yablonskiy, et al.. (2018). Light emission from Ge(Si)/SOI self-assembled nanoislands embedded in photonic crystal slabs of various periods with and without cavities. Semiconductor Science and Technology. 34(2). 24003–24003. 20 indexed citations
12.
Yurasov, D. V., А. В. Новиков, P. A. Yunin, et al.. (2018). Influence of thermal annealing on the electrical and luminescent properties of heavily Sb-doped Ge/Si(001) layers. Semiconductor Science and Technology. 33(12). 124019–124019. 6 indexed citations
13.
Дроздов, М. Н., Yu. N. Drozdov, А. В. Новиков, P. A. Yunin, & D. V. Yurasov. (2018). A New Limitation of the Depth Resolution in TOF-SIMS Elemental Profiling: the Influence of a Probing Ion Beam. Technical Physics Letters. 44(4). 320–323. 1 indexed citations
14.
Baidus, N. V., V. Ya. Aleshkin, А. А. Дубинов, et al.. (2017). Peculiarities of growing InGaAs/GaAs/AlGaAs laser structures by MOCVD on Ge/Si substrates. Semiconductors. 51(11). 1527–1530. 4 indexed citations
15.
Дроздов, М. Н., Yu. N. Drozdov, А. В. Новиков, P. A. Yunin, & D. V. Yurasov. (2016). Nonlinear calibration curves in secondary ion mass spectrometry for quantitative analysis of gesi heterostructures with nanoclusters. Technical Physics Letters. 42(3). 243–247. 2 indexed citations
17.
Волков, П. В., et al.. (2012). Optical monitoring of technological parameters during molecular-beam epitaxy. Semiconductors. 46(12). 1471–1475. 16 indexed citations
18.
Drozdov, Yu. N., А. В. Новиков, D. V. Yurasov, & P. A. Yunin. (2012). New approach to the X-ray diffraction analysis of test structures during flow calibration in epitaxial growth reactors. Journal of Surface Investigation X-ray Synchrotron and Neutron Techniques. 6(3). 494–497. 2 indexed citations
19.
Drozdov, Yu. N., М. Н. Дроздов, А. В. Новиков, P. A. Yunin, & D. V. Yurasov. (2012). Layer-by-layer analysis of structures containing δ-layers by secondary ion mass spectrometry taking into account the TOF.SIMS-5 depth resolution function. Journal of Surface Investigation X-ray Synchrotron and Neutron Techniques. 6(4). 574–577. 1 indexed citations
20.
Drozdov, Yu. N., А. В. Новиков, М. В. Шалеев, & D. V. Yurasov. (2010). Study of the transition of the epitaxial Ge film from layer-to-layer to three-dimensional growth in heterostructures with strained SiGe sublayers. Semiconductors. 44(4). 519–524. 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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