A. Nitayama

2.5k total citations · 1 hit paper
71 papers, 1.7k citations indexed

About

A. Nitayama is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Computer Networks and Communications. According to data from OpenAlex, A. Nitayama has authored 71 papers receiving a total of 1.7k indexed citations (citations by other indexed papers that have themselves been cited), including 62 papers in Electrical and Electronic Engineering, 11 papers in Atomic and Molecular Physics, and Optics and 9 papers in Computer Networks and Communications. Recurrent topics in A. Nitayama's work include Semiconductor materials and devices (44 papers), Advancements in Semiconductor Devices and Circuit Design (37 papers) and Ferroelectric and Negative Capacitance Devices (18 papers). A. Nitayama is often cited by papers focused on Semiconductor materials and devices (44 papers), Advancements in Semiconductor Devices and Circuit Design (37 papers) and Ferroelectric and Negative Capacitance Devices (18 papers). A. Nitayama collaborates with scholars based in Japan, South Korea and United States. A. Nitayama's co-authors include M. Kido, Y. Fukuzumi, Hideaki Aochi, K. Hieda, F. Horiguchi, H. Takato, F. Masuoka, H. Aochi, K. Sunouchi and M. Kito and has published in prestigious journals such as Journal of Applied Physics, IEEE Journal of Solid-State Circuits and IEEE Transactions on Electron Devices.

In The Last Decade

A. Nitayama

64 papers receiving 1.6k citations

Hit Papers

Bit Cost Scalable Technology with Punch and Plug Process ... 2007 2026 2013 2019 2007 100 200 300 400

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
A. Nitayama Japan 18 1.4k 436 219 184 162 71 1.7k
F. Masuoka Japan 21 1.5k 1.0× 414 0.9× 207 0.9× 90 0.5× 211 1.3× 115 1.7k
Chih‐Yuan Lu Taiwan 22 1.8k 1.3× 412 0.9× 487 2.2× 271 1.5× 122 0.8× 166 2.1k
Hang-Ting Lue Taiwan 24 2.0k 1.4× 723 1.7× 546 2.5× 132 0.7× 211 1.3× 168 2.3k
J.E. Brewer United States 13 671 0.5× 158 0.4× 124 0.6× 108 0.6× 105 0.6× 33 837
Myounggon Kang South Korea 23 1.5k 1.1× 544 1.2× 209 1.0× 94 0.5× 120 0.7× 159 1.8k
Chih-Yuan Lu Taiwan 20 1.4k 1.0× 467 1.1× 301 1.4× 81 0.4× 82 0.5× 172 1.6k
Kuang-Yeu Hsieh Taiwan 21 1.3k 0.9× 436 1.0× 324 1.5× 57 0.3× 90 0.6× 102 1.4k
Praveen Raghavan Belgium 19 1.5k 1.0× 285 0.7× 199 0.9× 138 0.8× 230 1.4× 142 1.7k
Hyungcheol Shin South Korea 18 892 0.6× 398 0.9× 83 0.4× 91 0.5× 92 0.6× 92 1.0k
G. Van den bosch Belgium 23 2.0k 1.4× 314 0.7× 419 1.9× 96 0.5× 103 0.6× 198 2.1k

Countries citing papers authored by A. Nitayama

Since Specialization
Citations

This map shows the geographic impact of A. Nitayama's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. Nitayama with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. Nitayama more than expected).

Fields of papers citing papers by A. Nitayama

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. Nitayama. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. Nitayama. The network helps show where A. Nitayama may publish in the future.

Co-authorship network of co-authors of A. Nitayama

This figure shows the co-authorship network connecting the top 25 collaborators of A. Nitayama. A scholar is included among the top collaborators of A. Nitayama based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with A. Nitayama. A. Nitayama is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Nitayama, A. & Hideaki Aochi. (2013). Bit Cost Scalable (BiCS) technology for future ultra high density storage memories. Symposium on VLSI Technology. 6576685. 7 indexed citations
2.
Fukuzumi, Y., et al.. (2010). Reduction of Bipolar Disturb of Floating-Body Cell (FBC) by Silicide and Thin Silicon Film Formed at Source and Drain Regions. IEEE Transactions on Electron Devices. 57(8). 1781–1788.
3.
4.
Takashima, D., S. Shiratake, H. Shiga, et al.. (2009). A 64-Mb Chain FeRAM With Quad BL Architecture and 200 MB/s Burst Mode. IEEE Transactions on Very Large Scale Integration (VLSI) Systems. 18(12). 1745–1752. 17 indexed citations
6.
Shino, T., Takashi Ohsawa, Tatsuya Higashi, et al.. (2008). Scaling scenario of floating body cell (FBC) suppressing V<inf>th</inf> variation due to random dopant fluctuation. 33–34. 6 indexed citations
7.
Tanaka, Hidetake, M. Kido, K. Yahashi, et al.. (2007). Bit Cost Scalable Technology with Punch and Plug Process for Ultra High Density Flash Memory. 14–15. 453 indexed citations breakdown →
8.
Fukuzumi, Y., Ryota Katsumata, Masaru Kito, et al.. (2007). Optimal Integration and Characteristics of Vertical Array Devices for Ultra-High Density, Bit-Cost Scalable Flash Memory. 449–452. 162 indexed citations
9.
Katsumata, Ryota, Masaru Kito, Y. Fukuzumi, et al.. (2006). Pipe-shaped BiCS flash memory with 16 stacked layers and multi-level-cell operation for ultra high density storage devices. Symposium on VLSI Technology. 136–137. 169 indexed citations
10.
Minami, Y., T. Shino, Atsushi Sakamoto, et al.. (2006). A floating body cell (FBC) fully compatible with 90nm CMOS technology(CMOS IV) for 128Mb SOI DRAM. 307–310. 5 indexed citations
12.
Takashima, D., S. Shiratake, H. Shiga, et al.. (2006). A 64Mb Chain FeRAM with Quad-BL Architecture and 200MB/s Burst Mode. 459–466. 15 indexed citations
13.
Kito, M., Ryoichi Katsumata, Masaki Kondo, et al.. (2005). Vertex channel array transistor (VCAT) featuring sub-60nm high performance and highly manufacturable trench capacitor DRAM. 32–33. 3 indexed citations
14.
Amano, M., H. Aikawa, Tetsuzo Ueda, et al.. (2004). Design and process integration for high-density, high-speed, and low-power 6F/sup 2/ cross point MRAM cell. 571–574. 10 indexed citations
15.
Shino, T., Koji Fujita, Takashi Ohsawa, et al.. (2004). Highly scalable FBC (Floating Body Cell) with 25nm BOX structure for embedded DRAM applications. 132–133. 19 indexed citations
16.
Nitayama, A., et al.. (2003). New phase shifting mask with self-aligned phase shifters for a quarter micron photolithography. 1088. 57–60. 1 indexed citations
17.
Shigyo, N., et al.. (1997). "Depletion isolation effect" of surrounding gate transistors. IEEE Transactions on Electron Devices. 44(12). 2303–2305. 11 indexed citations
18.
Takato, H., et al.. (1987). 0.5μm CMOS technology for 5.6nsec high speed 16×16 bit multiplier. Symposium on VLSI Technology. 109–110. 1 indexed citations
19.
Oowaki, Y., Kenji Numata, Kenji Tsuchiya, et al.. (1987). A sub-10-ns 16×16 multiplier using 0.6-μm CMOS technology. IEEE Journal of Solid-State Circuits. 22(5). 762–767. 16 indexed citations
20.
Nitayama, A., H. Sakaki, & Toshiaki Ikoma. (1980). Properties of Deep Levels in ZnO Varistors and Their Effect on Current-Response Characteristics. Japanese Journal of Applied Physics. 19(12). L743–L746. 39 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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