Hisashi Katahama

612 total citations
37 papers, 521 citations indexed

About

Hisashi Katahama is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, Hisashi Katahama has authored 37 papers receiving a total of 521 indexed citations (citations by other indexed papers that have themselves been cited), including 36 papers in Electrical and Electronic Engineering, 21 papers in Atomic and Molecular Physics, and Optics and 9 papers in Materials Chemistry. Recurrent topics in Hisashi Katahama's work include Silicon and Solar Cell Technologies (14 papers), Semiconductor Quantum Structures and Devices (13 papers) and Semiconductor materials and devices (13 papers). Hisashi Katahama is often cited by papers focused on Silicon and Solar Cell Technologies (14 papers), Semiconductor Quantum Structures and Devices (13 papers) and Semiconductor materials and devices (13 papers). Hisashi Katahama collaborates with scholars based in Japan, Poland and United States. Hisashi Katahama's co-authors include Akiyoshi Mitsuishi, Satοru Nakashima, Koji Sueoka, Y. Nakakura, Yoshimichi Okano, Mitsuhiro Shigeta, Isao Fujimoto, R. Cingolani, Ichiro Fujimoto and H. Arashi and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of The Electrochemical Society.

In The Last Decade

Hisashi Katahama

37 papers receiving 467 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Hisashi Katahama Japan 13 423 278 186 83 43 37 521
A. Chenevas-Paule France 12 356 0.8× 238 0.9× 190 1.0× 31 0.4× 95 2.2× 30 452
J. H. Dinan United States 10 262 0.6× 190 0.7× 132 0.7× 52 0.6× 29 0.7× 21 357
L. K. Vodop’yanov Russia 11 371 0.9× 283 1.0× 206 1.1× 41 0.5× 18 0.4× 43 476
Hiroshi Yamada‐Kaneta Japan 10 285 0.7× 148 0.5× 200 1.1× 35 0.4× 22 0.5× 53 371
M. S. Bresler Russia 13 398 0.9× 209 0.8× 490 2.6× 103 1.2× 108 2.5× 66 636
Shang-Yuan Ren United States 8 260 0.6× 183 0.7× 259 1.4× 22 0.3× 22 0.5× 15 395
D. Bahnck United States 10 309 0.7× 213 0.8× 128 0.7× 67 0.8× 8 0.2× 21 423
T.W. Kim South Korea 12 296 0.7× 149 0.5× 336 1.8× 43 0.5× 37 0.9× 63 485
C. Ance France 11 359 0.8× 199 0.7× 242 1.3× 25 0.3× 15 0.3× 35 425
G. A. Denisenko Russia 6 171 0.4× 150 0.5× 270 1.5× 104 1.3× 15 0.3× 19 360

Countries citing papers authored by Hisashi Katahama

Since Specialization
Citations

This map shows the geographic impact of Hisashi Katahama's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Hisashi Katahama with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Hisashi Katahama more than expected).

Fields of papers citing papers by Hisashi Katahama

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Hisashi Katahama. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Hisashi Katahama. The network helps show where Hisashi Katahama may publish in the future.

Co-authorship network of co-authors of Hisashi Katahama

This figure shows the co-authorship network connecting the top 25 collaborators of Hisashi Katahama. A scholar is included among the top collaborators of Hisashi Katahama based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Hisashi Katahama. Hisashi Katahama is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Sueoka, Koji, et al.. (2003). Computer Simulation for Morphology, Size, and Density of Oxide Precipitates in CZ Silicon. Journal of The Electrochemical Society. 150(8). G469–G469. 19 indexed citations
2.
Ono, Toshiaki, et al.. (2002). Nitrogen effect on grown-in defects in Czochralski silicon crystals. Journal of Crystal Growth. 236(1-3). 46–50. 6 indexed citations
3.
Sueoka, Koji, et al.. (2001). Mechanical properties of 300 mm wafers. Microelectronic Engineering. 56(1-2). 99–107. 5 indexed citations
4.
Kamei, Kazuhito, et al.. (2000). Hydrogen plasma irradiation and postannealing effects on crystalline quality at vicinal Si (100) surface. Applied Surface Science. 153(2-3). 134–142. 4 indexed citations
5.
Sueoka, Koji, et al.. (1999). Oxygen Precipitation Behaviour and Internal Gettering in Epitaxial and Polished Czochralski Silicon Wafers. Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena. 69-70. 63–72. 4 indexed citations
6.
Sueoka, Koji, et al.. (1999). Calculation of Slip Length in 300 mm Silicon Wafers during Thermal Processes. Journal of The Electrochemical Society. 146(7). 2683–2688. 3 indexed citations
7.
Sueoka, Koji, et al.. (1997). Mechanism of Slip Dislocation Generation by Oxide Precipitates in Czochralski Silicon Wafers. Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena. 57-58. 137–142. 6 indexed citations
8.
Sueoka, Koji, et al.. (1997). Dependence of Mechanical Strength of Czochralski Silicon Wafers on the Temperature of Oxygen Precipitation Annealing. Journal of The Electrochemical Society. 144(3). 1111–1120. 25 indexed citations
9.
Ishiwara, Hiroshi, et al.. (1995). Crystalline quality of strain-free GaAs-on-Si structures formed by annealing under ultrahigh pressure. Applied Physics Letters. 66(18). 2373–2375. 2 indexed citations
10.
Kamei, Kazuhito, et al.. (1995). Threading Dislocation Reduction in GaAs on Si with a Single InGaAs Intermediate Layer. Japanese Journal of Applied Physics. 34(3R). 1466–1466. 6 indexed citations
11.
Katahama, Hisashi, et al.. (1993). Behavior of Misfit Dislocations in GaAs Epilayers Grown on Si at Low Temperature by Molecular Beam Epitaxy. Japanese Journal of Applied Physics. 32(1S). 637–637. 10 indexed citations
12.
Fujiwara, Kazue, Hisashi Katahama, K. Kanamoto, R. Cingolani, & K. Ploog. (1991). Dynamics of inter- and intra-growth-island exciton localization in GaAs single quantum wells. Physical review. B, Condensed matter. 43(17). 13978–13982. 31 indexed citations
13.
Kamata, Norihiko, et al.. (1991). Separation of non-radiative and below-gap emission lifetimes in a heavily Si-doped GaAs/AlGaAs quantum well. Journal of Luminescence. 48-49. 763–767. 4 indexed citations
14.
Fujiwara, Kenzo, Hisashi Katahama, Kyozo Kanamoto, R. Cingolani, & K. H. Ploog. (1991). Dynamics of inter- and intra-growth island exciton transfer in GaAs single quantum wells under direct picosecond optical excitation. Superlattices and Microstructures. 9(2). 251–254. 2 indexed citations
15.
Tsuchiya, Hiroshi, et al.. (1990). Intersubband absorption changes in GaAs/AlGaAs MQW induced by external light. Surface Science. 228(1-3). 172–175. 1 indexed citations
16.
Katahama, Hisashi, et al.. (1990). Intersubband Absorption in In0.15Ga0.85As/Al0.35Ga0.65As Multiple Quantum Wells. Japanese Journal of Applied Physics. 29(4A). L552–L552. 8 indexed citations
17.
Katahama, Hisashi, et al.. (1989). Band and deep emission and their recombination processes in a heavily Si doped GaAs/AlGaAs quantum well. Superlattices and Microstructures. 5(4). 523–526. 4 indexed citations
18.
Okano, Yoshimichi, et al.. (1989). Characteristics of Heavily Si-Doped GaAs grown on (111)A Oriented Substrate by Molecular Beam Epitaxy as Compared with (100) growth. Japanese Journal of Applied Physics. 28(2A). L151–L151. 28 indexed citations
19.
Katahama, Hisashi, Shin-ichi Nakashima, Akiyoshi Mitsuishi, & B. Pałosz. (1985). Raman Scattering in CdI2Polytypes and Dispersion of Optical Phonons. Journal of the Physical Society of Japan. 54(8). 3154–3161. 2 indexed citations
20.
Katahama, Hisashi, Satοru Nakashima, Akiyoshi Mitsuishi, M. Ishigame, & H. Arashi. (1983). Raman scattering study of interlayer bonding in CdI2 AND SnS2 under hydrostatic pressure: analysis by use of Van Der Waals interaction. Journal of Physics and Chemistry of Solids. 44(11). 1081–1087. 29 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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