Katsuki Furukawa

539 total citations
17 papers, 426 citations indexed

About

Katsuki Furukawa is a scholar working on Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Katsuki Furukawa has authored 17 papers receiving a total of 426 indexed citations (citations by other indexed papers that have themselves been cited), including 15 papers in Electrical and Electronic Engineering, 6 papers in Electronic, Optical and Magnetic Materials and 5 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Katsuki Furukawa's work include Semiconductor materials and devices (14 papers), Silicon Carbide Semiconductor Technologies (13 papers) and Copper Interconnects and Reliability (4 papers). Katsuki Furukawa is often cited by papers focused on Semiconductor materials and devices (14 papers), Silicon Carbide Semiconductor Technologies (13 papers) and Copper Interconnects and Reliability (4 papers). Katsuki Furukawa collaborates with scholars based in Japan, United States and United Kingdom. Katsuki Furukawa's co-authors include Akira Suzuki, Mitsuhiro Shigeta, Shigeo Nakajima, S. Nakajima, Satοru Nakashima, Akiyoshi Mitsuishi, Hiroo Yugami, M. Taneya, Hisatomo Harima and Toshiaki Inoue and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Japanese Journal of Applied Physics.

In The Last Decade

Katsuki Furukawa

17 papers receiving 399 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Katsuki Furukawa Japan 10 359 117 109 91 55 17 426
弘之 松波 3 393 1.1× 97 0.8× 122 1.1× 79 0.9× 25 0.5× 5 450
E. Pettenpaul Germany 8 288 0.8× 65 0.6× 100 0.9× 34 0.4× 49 0.9× 15 351
Christian Brylinski France 13 418 1.2× 109 0.9× 136 1.2× 97 1.1× 77 1.4× 51 489
J.B. Fedison United States 13 558 1.6× 122 1.0× 80 0.7× 94 1.0× 156 2.8× 26 616
E. Downey United States 8 376 1.0× 93 0.8× 76 0.7× 75 0.8× 55 1.0× 11 424
Calvin H. Carter China 16 621 1.7× 148 1.3× 96 0.9× 114 1.3× 79 1.4× 23 671
Masahiro Nagano Japan 14 670 1.9× 203 1.7× 97 0.9× 132 1.5× 41 0.7× 46 724
R.T. Leonard China 12 367 1.0× 76 0.6× 64 0.6× 68 0.7× 58 1.1× 20 444
D. Henshall United States 10 478 1.3× 78 0.7× 77 0.7× 61 0.7× 44 0.8× 11 522
C. Harris Sweden 10 271 0.8× 46 0.4× 93 0.9× 52 0.6× 70 1.3× 12 325

Countries citing papers authored by Katsuki Furukawa

Since Specialization
Citations

This map shows the geographic impact of Katsuki Furukawa's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Katsuki Furukawa with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Katsuki Furukawa more than expected).

Fields of papers citing papers by Katsuki Furukawa

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Katsuki Furukawa. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Katsuki Furukawa. The network helps show where Katsuki Furukawa may publish in the future.

Co-authorship network of co-authors of Katsuki Furukawa

This figure shows the co-authorship network connecting the top 25 collaborators of Katsuki Furukawa. A scholar is included among the top collaborators of Katsuki Furukawa based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Katsuki Furukawa. Katsuki Furukawa is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

17 of 17 papers shown
1.
Yamamoto, H., Noriyuki Hasuike, Hiroshi Harima, et al.. (2010). Raman scattering characterization of p-type AlGaN layers. physica status solidi (b). 247(7). 1725–1727. 1 indexed citations
2.
Kurimoto, Eiji, Masaaki Takahashi, Hisatomo Harima, et al.. (2001). Optical Studies on AlGaN/InGaN/GaN Single Quantum-Well Structures under External Strains. physica status solidi (b). 228(1). 103–106. 1 indexed citations
3.
Harima, Hisatomo, Toshiaki Inoue, S. Nakashima, Katsuki Furukawa, & M. Taneya. (1998). Electronic properties in p-type GaN studied by Raman scattering. Applied Physics Letters. 73(14). 2000–2002. 37 indexed citations
4.
Furukawa, Katsuki, et al.. (1993). Bulk Growth of Single-Crystal Cubic Silicon Carbide by Vacuum Sublimation Method. Japanese Journal of Applied Physics. 32(5A). L645–L645. 13 indexed citations
5.
Suzuki, Akira, et al.. (1991). Effect of the junction interface properties on blue emission of SiC blue LEDs grown by step-controlled CVD. Journal of Crystal Growth. 115(1-4). 623–627. 24 indexed citations
6.
Shigeta, Mitsuhiro, et al.. (1989). Chemical vapor deposition of single-crystal films of cubic SiC on patterned Si substrates. Applied Physics Letters. 55(15). 1522–1524. 7 indexed citations
7.
Shigeta, Mitsuhiro, et al.. (1988). Inclined-epitaxy of β-SiC on Si(n11) substrates (n = 3, 4, 5, 6) by chemical vapor deposition. Journal of Crystal Growth. 93(1-4). 766–770. 7 indexed citations
8.
Shigeta, Mitsuhiro, et al.. (1988). Dependence on the Schottky metal and crystal orientation of the Schottky diode characteristics of β-SiC single crystals grown by chemical vapor deposition. Journal of Applied Physics. 64(10). 5020–5025. 12 indexed citations
9.
Suzuki, Akira, et al.. (1988). Analysis of temperature dependence of Hall mobility of nondoped and nitrogen-doped β-SiC single crystals grown by chemical vapor deposition. Journal of Applied Physics. 64(5). 2818–2821. 11 indexed citations
10.
11.
Yugami, Hiroo, Satοru Nakashima, Akiyoshi Mitsuishi, et al.. (1987). Characterization of the free-carrier concentrations in doped β-SiC crystals by Raman scattering. Journal of Applied Physics. 61(1). 354–358. 122 indexed citations
12.
Shigeta, Mitsuhiro, et al.. (1987). Inclined epitaxy of (411) beta silicon carbide on (511) silicon by chemical vapor deposition. Applied Physics Letters. 50(23). 1684–1685. 6 indexed citations
13.
Furukawa, Katsuki, Y. Fujii, K. Nakanishi, et al.. (1987). Insulated-gate and junction-gate FET's of CVD-Grown β-SiC. IEEE Electron Device Letters. 8(2). 48–49. 18 indexed citations
14.
Suzuki, Akira, et al.. (1986). Temperature dependence of electrical properties of non-doped and nitrogen-doped beta-SiC single crystals grown by chemical vapor deposition. Applied Physics Letters. 49(8). 450–452. 55 indexed citations
15.
Furukawa, Katsuki, et al.. (1986). 3C-SiC p-n junction diodes. Applied Physics Letters. 48(22). 1536–1537. 40 indexed citations
16.
Suzuki, Akira, et al.. (1984). Epitaxial growth of β-SiC single crystals by successive two-step CVD. Journal of Crystal Growth. 70(1-2). 287–290. 54 indexed citations
17.
Kamada, Masao, Katsuki Furukawa, & Kenjirō Tsutsumi. (1981). Thermally Stimulated Exoelectron Emission in KCl: Tl, KCl: Cu and Undoped KCl. Japanese Journal of Applied Physics. 20(1). 71–71. 9 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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