Jong Tae Park

621 citations

69 papers · 515 indexed · h-index 14

Impact in

Electrical and Electronic Engineering top 10%
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Thin-Film Transistor Technologies
Electronic, Optical and Magnetic Materials
- Magnetic Properties and Applications

Papers in

Electrical and Electronic Engineering 54
- Semiconductor materials and devices 34
- Advancements in Semiconductor Devices and Circuit Design 29
- Thin-Film Transistor Technologies 16
- Silicon Carbide Semiconductor Technologies 13
- Silicon and Solar Cell Technologies 10
Electronic, Optical and Magnetic Materials 15
- Magnetic Properties and Applications 13

Co-authors: Chong-Gun Yu Seung Min Lee Won-Ju Cho Krishnaiah Mokurala Sung Hun Jin J.-P. Colinge Jin Young Kim Joondong Kim
Journals: Microelectronics Reliability (30 papers)Solid-State Electronics (6 papers)IEEE Electron Device Letters (2 papers)IEEE Transactions on Electron Devices (2 papers)Journal of Alloys and Compounds (2 papers)
Partner nations: South Korea United States Ireland

In The Last Decade

Jong Tae Park

65 papers receiving 503 citations

Peers

Countries citing papers authored by Jong Tae Park

Since Specialization

Citations

This map shows the geographic impact of Jong Tae Park's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Jong Tae Park with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Jong Tae Park more than expected).

Fields of papers citing papers by Jong Tae Park

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Jong Tae Park. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Jong Tae Park. The network helps show where Jong Tae Park may publish in the future.

Co-authorship network

The 25 scholars most cited alongside Jong Tae Park, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Jong Tae Park Line = papers co-authored together Jong Tae Park links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Coplanar Dual Gates Silicon-on-insulator based Ultra-sensitive Ion-Sensitive Field-Effect Transistors for Point-of-Care Biosensor platform Tawakalitu Aliu, Jong Tae Park, Won-Ju Cho	2019	1
2	Highly crystalline, large grain Cu2CoSnS4 films with reproducible stoichiometry via direct solution spin coating for optoelectronic device application Ceramics International ·Krishnaiah Mokurala, Rajneesh Kumar Mishra, Seung Gi Seo, Sung Hun Jin, Jong Tae Park	2019	17
3	Device performances and instabilities of channel engineered amorphous InGaZnO thin film transistors Microelectronics Reliability ·Md Abubakkar, Young Hwan Park, Tolani A A Afolabi, Won-Ju Cho, Jong Tae Park	2019	3
4	Annealing temperature and stabilizer effects on morphological evolution of Cu2CoSnS4 films on thermally oxidized Si wafers via direct spin-coating Journal of Alloys and Compounds ·Krishnaiah Mokurala, Rajneesh Kumar Mishra, Seung Gi Seo, Sung Hun Jin, Jong Tae Park	2018	18
5	Negative bias illumination stress instability in amorphous InGaZnO thin film transistors with ITO local conducting buried layer Microelectronics Reliability ·Sang Min Kim, Min-Soo Kang, B D Benneyworth, Jong Tae Park	2017	2
6	Wire width dependence of hot carrier degradation in silicon nanowire gate-all-around MOSFETs Microelectronics Reliability ·Jonathan Vega Coto, Jong Tae Park	2015	4
7	Effect of source and drain asymmetry on hot carrier degradation in vertical nanowire MOSFETs Microelectronics Reliability ·Jae‐Hoon Lee, Jin‐Woo Han, Chong-Gun Yu, Jong Tae Park	2015	5
8	Impact of back gate biases on hot carrier effects in multiple gate junctionless transistors Microelectronics Reliability ·Seung Min Lee, Robert H. Mosebar, Jong Tae Park	2013	8
9	A comparative study on device degradation under a positive gate stress and hot carrier stress in InGaZnO thin film transistors Microelectronics Reliability ·Robert H. Mosebar, Seung Min Lee, Chong-Gun Yu, Jong Tae Park	2013	5
10	Negative-bias-temperature-instability and hot carrier effects in nanowire junctionless p-channel multigate transistors Applied Physics Letters ·Jong Tae Park, Jin Young Kim, J.-P. Colinge	2012	23
11	Analysis of edge and corner bonded PSvfBGA reliability under thermal cycling conditions by experimental and finite element methods Microelectronics Reliability ·Hongbin Shi, Fa Xing, Cuihua Tian, Rui Zhang, Jong Tae Park, Toshitsugu Ueda	2012	17
12	A Guideline for the Optimum Fin Width Considering Hot-Carrier and NBTI Degradation in MuGFETs IEEE Electron Device Letters ·Dong‐Hun Lee, Seung Min Lee, Chong-Gun Yu, Jong Tae Park	2011	13
13	The optimum fin width in p-MuGFETs with the consideration of NBTI and hot carrier degradation Microelectronics Reliability ·Dongwook Kim, Dambe Jallow, Jong Tae Park	2010	3
14	Recrystallisation, Grain Growth and Texture Evolution in Nonoriented Electrical Steels Materials science forum ·Jong Tae Park, Jang‐Kyo Kim, Jerzy A. Szpunar	2007	4
15	Evolution of the Texture on Primary Recrystallization and Grain Growth in Fe-3%Si Steels Materials science forum ·Kyu Seok Han, Jong Tae Park, Jang‐Kyo Kim, Jerzy A. Szpunar	2007	7
16	The Effects of Hot Band Annealing Temperature on the Texture of 1% an 2%Si Nonoriented Electrical Steels Materials science forum ·Jae Young Choi, Jong Tae Park, Jia Li, Jang‐Kyo Kim	2007	0
17	A Quantum Definition of Threshold Voltage in MuGFETs Digital Access to Libraries (Université catholique de Louvain (UCL), l'Université de Namur (UNamur) and the Université Saint-Louis (USL-B)) ·Meghan Berger, Chong-Gun Yu, Jong Tae Park, Chi‐Woo Lee, Dimitri Lederer, Aryan Afzalian, Ran Yan, J.-P. Colinge	2007	10
18	Phase Field Model Simulation of Grain Growth in Three Dimensions under Isotropic and Anisotropic Grain Boundary Energy Conditions Materials science forum ·Lawrence E. Pierce, M Mico Maria, Jong Tae Park, Jang‐Kyo Kim, Nong‐Moon Hwang	2007	5
19	Effect of Temper Rolling Reduction and Annealing Time on Texture Formation during Final Annealing in Electrical Steels Materials science forum ·Jong Tae Park, Jerzy A. Szpunar, C. S. Connon	2002	13
20	Hot carrier induced device degradation in RF-nMOSFET's Microelectronics Reliability ·Jong Tae Park, Lívia Maria de Souza Pereira, Dongwook Kim, Chong-Gun Yu, Tamara Korolyuk	1998	1

About Jong Tae Park

Jong Tae Park is a scholar working on Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Mechanical Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics, having authored 69 papers that have together received 515 indexed citations. Recurring topics across this work include Semiconductor materials and devices (34 papers), Advancements in Semiconductor Devices and Circuit Design (29 papers), Thin-Film Transistor Technologies (16 papers), Silicon Carbide Semiconductor Technologies (13 papers), Magnetic Properties and Applications (13 papers), Microstructure and Mechanical Properties of Steels (11 papers), Silicon and Solar Cell Technologies (10 papers) and ZnO doping and properties (9 papers). The work is most often cited by research in Electrical and Electronic Engineering (406 citations), Electronic, Optical and Magnetic Materials (86 citations), Materials Chemistry (178 citations), Polymers and Plastics (30 citations) and Mechanical Engineering (69 citations). Jong Tae Park has collaborated with scholars based in South Korea, United States and Ireland. Frequent co-authors include Chong-Gun Yu, Seung Min Lee, Won-Ju Cho, Krishnaiah Mokurala, Sung Hun Jin, J.-P. Colinge, Jin Young Kim, Joondong Kim, Amit Kumar Rana and Jerzy A. Szpunar. Their work appears in journals such as Microelectronics Reliability, Solid-State Electronics, IEEE Electron Device Letters, IEEE Transactions on Electron Devices and Journal of Alloys and Compounds.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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