Tomoyasu Inoue

1.9k total citations
76 papers, 1.6k citations indexed

About

Tomoyasu Inoue is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Computational Mechanics. According to data from OpenAlex, Tomoyasu Inoue has authored 76 papers receiving a total of 1.6k indexed citations (citations by other indexed papers that have themselves been cited), including 54 papers in Electrical and Electronic Engineering, 44 papers in Materials Chemistry and 11 papers in Computational Mechanics. Recurrent topics in Tomoyasu Inoue's work include Semiconductor materials and devices (31 papers), Catalytic Processes in Materials Science (29 papers) and Silicon and Solar Cell Technologies (20 papers). Tomoyasu Inoue is often cited by papers focused on Semiconductor materials and devices (31 papers), Catalytic Processes in Materials Science (29 papers) and Silicon and Solar Cell Technologies (20 papers). Tomoyasu Inoue collaborates with scholars based in Japan, United States and Italy. Tomoyasu Inoue's co-authors include Y. Yamamoto, Satoru Suzuki, Yuki Ueda, S. Koyama, M.-S. Chen, Shunsuke Hasegawa, A. Nakagawa, Ichiro Omura, Tetsu Ohsuna and Li Luo and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

Tomoyasu Inoue

76 papers receiving 1.5k citations

Peers

Tomoyasu Inoue
M. Ganciu Romania
Wei-Kan Chu United States
Gang Yao China
Tomoyasu Inoue
Citations per year, relative to Tomoyasu Inoue Tomoyasu Inoue (= 1×) peers Yu. A. Kotov

Countries citing papers authored by Tomoyasu Inoue

Since Specialization
Citations

This map shows the geographic impact of Tomoyasu Inoue's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Tomoyasu Inoue with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Tomoyasu Inoue more than expected).

Fields of papers citing papers by Tomoyasu Inoue

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Tomoyasu Inoue. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Tomoyasu Inoue. The network helps show where Tomoyasu Inoue may publish in the future.

Co-authorship network of co-authors of Tomoyasu Inoue

This figure shows the co-authorship network connecting the top 25 collaborators of Tomoyasu Inoue. A scholar is included among the top collaborators of Tomoyasu Inoue based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Tomoyasu Inoue. Tomoyasu Inoue is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Inoue, Tomoyasu, et al.. (2014). Highly separated hybrid orientation structure of CeO2(100) and (110) on Si(100) substrates by electron beam-induced orientation-selective epitaxy. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 32(3). 1 indexed citations
2.
Inoue, Tomoyasu, et al.. (2011). Two dimensional control of electron beam induced orientation selective epitaxial growth of (100) and (110)CeO2 regions on Si(100) substrates. Thin Solid Films. 519(17). 5775–5779. 3 indexed citations
3.
Inoue, Tomoyasu, et al.. (2009). Optimal Conditions for Popping Amaranth Seeds. Drying Technology. 27(7-8). 918–926. 13 indexed citations
4.
Iyota, Hiroyuki, Y. Konishi, Tomoyasu Inoue, et al.. (2005). Popping of Amaranth Seeds in Hot Air and Superheated Steam. Drying Technology. 23(6). 1273–1287. 16 indexed citations
7.
Fujiwara, Y., M. Hanada, Tomoyasu Inoue, et al.. (1998). Radiation induced conductivity and voltage holding characteristics of insulation gas for the ITER NBI. AIP conference proceedings. 205–216. 5 indexed citations
8.
Hazama, H., Masahiro Takahashi, S. Kambayashi, et al.. (1991). Application of E-beam recrystallization to three-layer image processor fabrication. IEEE Transactions on Electron Devices. 38(1). 47–54. 7 indexed citations
9.
Luo, Li, X. D. Wu, R. C. Dye, et al.. (1991). a-axis oriented YBa2Cu3O7−x thin films on Si with CeO2 buffer layers. Applied Physics Letters. 59(16). 2043–2045. 99 indexed citations
10.
Inoue, Tomoyasu, Tetsu Ohsuna, Y. Yamamoto, et al.. (1991). Orientation Dependent Epitaxial Growth of CeO2 Layers on Si Substrates. MRS Proceedings. 237. 6 indexed citations
11.
Inoue, Tomoyasu, Y. Yamamoto, S. Koyama, Satoru Suzuki, & Yuki Ueda. (1990). Epitaxial growth of CeO2 layers on silicon. Applied Physics Letters. 56(14). 1332–1333. 244 indexed citations
12.
Inoue, Tomoyasu & Toshihiko Hamasaki. (1987). Direct observation of growth front movement in electron beam recrystallization of silicon layer on insulator. Applied Physics Letters. 50(15). 971–973. 4 indexed citations
13.
Hamasaki, Toshihiko, et al.. (1987). Multilevel construction of seeded-laterally epitaxial silicon films on insulator. Journal of Applied Physics. 62(1). 126–130. 4 indexed citations
14.
Honda, Masaki, et al.. (1984). Partial Discharge Automatic Monitor for Oil-Filled Power Transformer. IEEE Transactions on Power Apparatus and Systems. PAS-103(2). 422–428. 40 indexed citations
15.
Shibata, Kenji, Y. Ohmura, Tomoyasu Inoue, et al.. (1983). Growth of Large Grained Silicon on Insulator by Electron Beam Annealing and Performance of MOS Devices. Japanese Journal of Applied Physics. 22(S1). 213–213. 3 indexed citations
16.
Inoue, Tomoyasu, et al.. (1983). Lateral Epitaxy of Si Films Deposited in a UHV Ambient by Electron Beam Annealing. 1 indexed citations
17.
Inoue, Tomoyasu, et al.. (1983). . Shinku. 26(7). 606–613. 1 indexed citations
18.
Shibata, Kenji, et al.. (1982). Stripe Shaped Crystal Growth and Its Model of Silicon Films on Silicon Nitride Layer by Scanning Electron Beam Annealing. Japanese Journal of Applied Physics. 21(5A). L294–L294. 3 indexed citations
19.
Taguchi, S., et al.. (1981). IMPROVEMENT OF SOS DEVICE PERFORMANCE BY SOLID-PHASE EPITAXY. 4 indexed citations
20.
Inoue, Tomoyasu, et al.. (1981). Crystalline quality improvement of SOS films by SI implantation and subsequent annealing. Nuclear Instruments and Methods. 182-183. 683–690. 12 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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