Norimichi Noguchi

1.7k total citations · 1 hit paper
13 papers, 1.4k citations indexed

About

Norimichi Noguchi is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Biomedical Engineering. According to data from OpenAlex, Norimichi Noguchi has authored 13 papers receiving a total of 1.4k indexed citations (citations by other indexed papers that have themselves been cited), including 13 papers in Condensed Matter Physics, 13 papers in Electronic, Optical and Magnetic Materials and 7 papers in Biomedical Engineering. Recurrent topics in Norimichi Noguchi's work include GaN-based semiconductor devices and materials (13 papers), Ga2O3 and related materials (13 papers) and Photocathodes and Microchannel Plates (7 papers). Norimichi Noguchi is often cited by papers focused on GaN-based semiconductor devices and materials (13 papers), Ga2O3 and related materials (13 papers) and Photocathodes and Microchannel Plates (7 papers). Norimichi Noguchi collaborates with scholars based in Japan and Ireland. Norimichi Noguchi's co-authors include Hideki Hirayama, Norihiko Kamata, Kenji Tsubaki, Takayoshi Takano, Tohru Yatabe, Takuya Mino, Jun Sakai, Tomoaki Ohashi, Jun Norimatsu and Sachie Fujikawa and has published in prestigious journals such as Applied Physics Letters, Applied Physics Express and physica status solidi (a).

In The Last Decade

Norimichi Noguchi

12 papers receiving 1.3k citations

Hit Papers

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What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Deep-ultraviolet light-emitting diodes with external quantum efficiency higher than 20% at 275 nm achieved by improving light-extraction efficiency

2017 467 citations Takayoshi Takano, Takuya Mino et al. Applied Physics Express profile →

Peers

Countries citing papers authored by Norimichi Noguchi

Since Specialization

Citations

This map shows the geographic impact of Norimichi Noguchi's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Norimichi Noguchi with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Norimichi Noguchi more than expected).

Fields of papers citing papers by Norimichi Noguchi

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Norimichi Noguchi. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Norimichi Noguchi. The network helps show where Norimichi Noguchi may publish in the future.

Co-authorship network of co-authors of Norimichi Noguchi

This figure shows the co-authorship network connecting the top 25 collaborators of Norimichi Noguchi. A scholar is included among the top collaborators of Norimichi Noguchi based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Norimichi Noguchi. Norimichi Noguchi is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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13 of 13 papers shown

#	Work	Indexed citations
1	Deep-ultraviolet light-emitting diodes with external quantum efficiency higher than 20% at 275 nm achieved by improving light-extraction efficiency breakdown → 2017 ·Applied Physics Express ·Takayoshi Takano, Takuya Mino, Jun Sakai, Norimichi Noguchi, Kenji Tsubaki, Hideki Hirayama	467
2	Highly‐uniform 260 nm‐band AlGaN‐based deep‐ultraviolet light‐emitting diodes developed by 2‐inch×3 MOVPE system 2011 ·Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·Takuya Mino, Hideki Hirayama, Takayoshi Takano, Norimichi Noguchi, Kenji Tsubaki	10
3	Development of 230–270 nm AlGaN‐based deep‐UV LEDs 2010 ·Electronics and Communications in Japan ·Hideki Hirayama, Tohru Yatabe, Norimichi Noguchi, Norihiko Kamata	36
4	222 nm Deep-Ultraviolet AlGaN Quantum Well Light-Emitting Diode with Vertical Emission Properties 2010 ·Applied Physics Express ·Hideki Hirayama, Norimichi Noguchi, Norihiko Kamata	70
5	Milliwatt power 270 nm‐band AlGaN deep‐UV LEDs fabricated on ELO‐AlN templates 2009 ·Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·Hideki Hirayama, Jun Norimatsu, Norimichi Noguchi, Sachie Fujikawa, Takayoshi Takano, Kenji Tsubaki, Norihiko Kamata	24
6	222–282 nm AlGaN and InAlGaN‐based deep‐UV LEDs fabricated on high‐quality AlN on sapphire 2009 ·physica status solidi (a) ·Hideki Hirayama, Sachie Fujikawa, Norimichi Noguchi, Jun Norimatsu, Takayoshi Takano, Kenji Tsubaki, Norihiko Kamata	356
7	222 nm single‐peaked deep‐UV LED with thin AlGaN quantum well layers 2009 ·Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·Norimichi Noguchi, Hideki Hirayama, Tohru Yatabe, Norihiko Kamata	11
8	222-282 nm AlGaN and InAlGaN based deep-UV LEDs fabricated on high-quality AlN template 2009 ·Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·Hideki Hirayama, Norimichi Noguchi, Sachie Fujikawa, Jun Norimatsu, Norihiko Kamata, Takayoshi Takano, Kenji Tsubaki	18
9	226–273 nm AlGaN deep‐ultraviolet light‐emitting diodes fabricated on multilayer AlN buffers on sapphire 2008 ·Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·Hideki Hirayama, Tohru Yatabe, Norimichi Noguchi, Tomoaki Ohashi, Norihiko Kamata	19
10	Improvement of surface roughness and reduction of threading dislocation density in AlN/AlGaN templates on sapphire by employing trimethylaluminum pulsed supply growth 2008 ·Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·Norimichi Noguchi, Tomoaki Ohashi, Norihiko Kamata, Hideki Hirayama	5
11	227 nm AlGaN Light-Emitting Diode with 0.15 mW Output Power Realized using a Thin Quantum Well and AlN Buffer with Reduced Threading Dislocation Density 2008 ·Applied Physics Express ·Hideki Hirayama, Norimichi Noguchi, Tohru Yatabe, Norihiko Kamata	92
12	227-261nm AlGaN-based Deep Ultraviolet Light-emitting Diodes Fabricated on High-quality AlN Buffer on Sapphire 2008 ·Journal of Light & Visual Environment ·Hideki Hirayama, Tohru Yatabe, Norimichi Noguchi, Norihiko Kamata	0
13	231–261nm AlGaN deep-ultraviolet light-emitting diodes fabricated on AlN multilayer buffers grown by ammonia pulse-flow method on sapphire 2007 ·Applied Physics Letters ·Hideki Hirayama, Tohru Yatabe, Norimichi Noguchi, Tomoaki Ohashi, Norihiko Kamata	293

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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