Mark Power Smith

2.0k citations

71 papers · 1.7k · h-index 21

Impact in

Condensed Matter Physics top 1%
- GaN-based semiconductor devices and materials
Nuclear and High Energy Physics
- Magnetic confinement fusion research

Papers in

Condensed Matter Physics 19
- GaN-based semiconductor devices and materials 19
Nuclear and High Energy Physics 12
- Magnetic confinement fusion research 12

Co-authors: H. X. Jiang (23 shared papers)J.Y. Lin (22 shared papers)G. D. Chen (9 shared papers)Md Asif Khan (8 shared papers)Hadis Morkoç (9 shared papers)C. J. Sun (6 shared papers)Andrei E. Botchkarev (6 shared papers)Richard McMahon (12 shared papers)
Journals: Applied Physics Letters (17 papers)Fusion Engineering and Design (10 papers)Journal of Applied Physics (5 papers)Fusion Science & Technology (5 papers)IEEE Transactions on Plasma Science (3 papers)
Partner nations: United States United Kingdom Germany

In The Last Decade

Mark Power Smith

68 papers receiving 1.7k citations

Peers

Countries citing papers authored by Mark Power Smith

Since Specialization

Citations

This map shows the geographic impact of Mark Power Smith's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Mark Power Smith with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Mark Power Smith more than expected).

Fields of papers citing papers by Mark Power Smith

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Mark Power Smith. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Mark Power Smith. The network helps show where Mark Power Smith may publish in the future.

Co-authors

The 25 scholars most cited alongside Mark Power Smith, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Mark Power Smith Line = papers co-authored together Mark Power Smith links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 71 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Overview of the physics and engineering design of NSTX upgrade Nuclear Fusion ·Jonathan E. Menard, Stefan P Gerhardt, Michael Bell, Jim Bialek, A. Brooks, John M. Canik, James H. Chrzanowski, M. Denault	2012	188
2	Fundamental optical transitions in GaN Applied Physics Letters ·G. D. Chen, Mark Power Smith, J.Y. Lin, H. X. Jiang, Su‐Huai Wei, Md Asif Khan, C. J. Sun	1996	170
3	Mechanisms of band-edge emission in Mg-doped p-type GaN Applied Physics Letters ·Mark Power Smith, G. D. Chen, J.Y. Lin, H. X. Jiang, Boris Sverdlov, Andrei E. Botchkarev, Hadis Morkoç, Barbara L. Goldenberg +1 other	1996	120
4	4H–SiC photoconductive switching devices for use in high-power applications Applied Physics Letters ·Seydi Doğan, Ali Teke, Daming Huang, Hadis Morkoç, Carson B. Roberts, John W. Parish, Biswa N. Ganguly, Mark Power Smith	2003	101
5	Time-resolved photoluminescence studies of InGaN epilayers Applied Physics Letters ·Mark Power Smith, G. D. Chen, J.Y. Lin, H. X. Jiang, Md Asif Khan, Qiyu Chen	1996	91
6	Effects of tensile and compressive strain on the luminescence properties of AlInGaN/InGaN quantum well structures Applied Physics Letters ·Michael E. Aumer, Stephen F. LeBoeuf, Salah M. Bedair, Mark Power Smith, J.Y. Lin, H. X. Jiang	2000	91
7	Quantum shift of band-edge stimulated emission in InGaN–GaN multiple quantum well light-emitting diodes Applied Physics Letters ·C. J. Sun, M. Zubair Anwar, Jinhong Yang, Md Asif Khan, Michael Shur, Alexei Bykhovski, Zuzanna Liliental-Weber, C. F. Kisielowski	1997	81
8	Excitonic recombination in GaN grown by molecular beam epitaxy Applied Physics Letters ·Mark Power Smith, G. D. Chen, J. Z. Li, J.Y. Lin, H. X. Jiang, W. K. Kim, Özgür Aktaş, Andrei E. Botchkarev	1995	71
9	Modelling of flash-lamp-induced crystallization of amorphous silicon thin films on glass Journal of Crystal Growth ·Mark Power Smith, Richard McMahon, Matthias Voelskow, Dieter Panknin, W. Skorupa	2005	58
10	Optical transitions in GaN/AlxGa1−xN multiple quantum wells grown by molecular beam epitaxy Applied Physics Letters ·Mark Power Smith, J.Y. Lin, H. X. Jiang, Andrei E. Botchkarev, W. Kim, Hadis Morkoç +1 other	1996	57
11	Neutral-donor-bound exciton recombination dynamics in GaN grown by metalorganic chemical vapor deposition Applied Physics Letters ·G. D. Chen, Mark Power Smith, J.Y. Lin, H. X. Jiang, Md Asif Khan, C. J. Sun	1995	55
12	Room temperature intrinsic optical transition in GaN epilayers: The band-to-band versus excitonic transitions Applied Physics Letters ·Mark Power Smith, J.Y. Lin, H. X. Jiang, Md Asif Khan	1997	53
13	Photoluminescence studies of band-edge transitions in GaN epitaxial layers grown by plasma-assisted molecular beam epitaxy Journal of Applied Physics ·G. D. Chen, Mark Power Smith, J.Y. Lin, H. X. Jiang, Boris Sverdlov, A. Botchkarv, Hadis Morkoç +1 other	1996	52
14	Exciton-phonon interaction in InGaN/GaN and GaN/AlGaN multiple quantum wells Applied Physics Letters ·Mark Power Smith, J.Y. Lin, H. X. Jiang, Ali Hossain Khan, Qiyu Chen, Andrei E. Botchkarev, Wonsuck Kim, Hadis Morkoç +1 other	1997	51
15	Free excitonic transitions in GaN, grown by metal-organic chemical-vapor deposition Journal of Applied Physics ·Mark Power Smith, G. D. Chen, J.Y. Lin, H. X. Jiang, Md Asif Khan, C. J. Sun, Qiyu Chen, Jinwei Yang	1996	48
16	Flash-lamp annealing of semiconductor materials—Applications and process models Vacuum ·Richard McMahon, Mark Power Smith, Keith Alexander Seffen, Matthias Voelskow, W. Anwand, W. Skorupa	2007	46
17	Dynamics of a band-edge transition in GaN grown by molecular beam epitaxy Applied Physics Letters ·Mark Power Smith, G. D. Chen, J.Y. Lin, H. X. Jiang, Boris Sverdlov, Andrei E. Botchkarev, Hadis Morkoç +1 other	1995	35
18	Modeling and regrowth mechanisms of flash lamp processing of SiC-on-silicon heterostructures Journal of Applied Physics ·Mark Power Smith, Richard McMahon, Matthias Voelskow, Wolgang Skorupa	2004	32
19	Collective effects of interface roughness and alloy disorder in InxGa1−xN/GaN multiple quantum wells Applied Physics Letters ·K. C. Zeng, Mark Power Smith, J.Y. Lin, H. X. Jiang	1998	24
20	Acceptor-bound exciton recombination dynamics in p-type GaN Applied Physics Letters ·Mark Power Smith, G. D. Chen, J.Y. Lin, H. X. Jiang, Md Asif Khan, C. J. Sun	1995	23

About Mark Power Smith

Mark Power Smith is a scholar working on Condensed Matter Physics, Nuclear and High Energy Physics, Electrical and Electronic Engineering, Materials Chemistry and Biomedical Engineering, having authored 71 papers that have together received 1.7k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (19 papers), Magnetic confinement fusion research (12 papers), Silicon Carbide Semiconductor Technologies (8 papers), Fusion materials and technologies (4 papers), Superconducting Materials and Applications (3 papers), Semiconductor Quantum Structures and Devices (1 paper), Semiconductor materials and devices (1 paper) and Quantum and electron transport phenomena (1 paper). The work is most often cited by research in Condensed Matter Physics (885 citations), Nuclear and High Energy Physics (218 citations), Electrical and Electronic Engineering (176 citations), Materials Chemistry (108 citations) and Atomic and Molecular Physics, and Optics (66 citations). Mark Power Smith has collaborated with scholars based in United States, United Kingdom and Germany. Frequent co-authors include H. X. Jiang, J.Y. Lin, G. D. Chen, Md Asif Khan, Hadis Morkoç, C. J. Sun, Andrei E. Botchkarev, Richard McMahon, Matthias Voelskow and Qiyu Chen. Their work appears in journals such as Applied Physics Letters, Fusion Engineering and Design, Journal of Applied Physics, Fusion Science & Technology and IEEE Transactions on Plasma Science.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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