M. J. Hafich

1.5k total citations
103 papers, 1.1k citations indexed

About

M. J. Hafich is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, M. J. Hafich has authored 103 papers receiving a total of 1.1k indexed citations (citations by other indexed papers that have themselves been cited), including 99 papers in Electrical and Electronic Engineering, 83 papers in Atomic and Molecular Physics, and Optics and 14 papers in Materials Chemistry. Recurrent topics in M. J. Hafich's work include Semiconductor Quantum Structures and Devices (75 papers), Semiconductor Lasers and Optical Devices (40 papers) and Semiconductor materials and devices (33 papers). M. J. Hafich is often cited by papers focused on Semiconductor Quantum Structures and Devices (75 papers), Semiconductor Lasers and Optical Devices (40 papers) and Semiconductor materials and devices (33 papers). M. J. Hafich collaborates with scholars based in United States and United Kingdom. M. J. Hafich's co-authors include G. Y. Robinson, M. A. Haase, Ian L. Spain, N. Ōtsuka, John F. Klem, Jianhui Chen, J. R. Sites, K.M. Geib, S.A. Feld and C. W. Wilmsen and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

M. J. Hafich

95 papers receiving 1.1k citations

Peers

M. J. Hafich
M. Quillec France
C. Jagannath United States
Hiromitsu Asai Japan
R. D. Feldman United States
T. J. de Lyon United States
A. R. Clawson United States
P. G. Newman United States
R. Azoulay France
David Mui United States
A. Schlachetzki Germany
M. Quillec France
M. J. Hafich
Citations per year, relative to M. J. Hafich M. J. Hafich (= 1×) peers M. Quillec

Countries citing papers authored by M. J. Hafich

Since Specialization
Citations

This map shows the geographic impact of M. J. Hafich's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. J. Hafich with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. J. Hafich more than expected).

Fields of papers citing papers by M. J. Hafich

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. J. Hafich. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. J. Hafich. The network helps show where M. J. Hafich may publish in the future.

Co-authorship network of co-authors of M. J. Hafich

This figure shows the co-authorship network connecting the top 25 collaborators of M. J. Hafich. A scholar is included among the top collaborators of M. J. Hafich based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M. J. Hafich. M. J. Hafich is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Choquette, Kent D., et al.. (2003). Improved performance of selectively oxidized visible VCSELs. 2. 395–396. 1 indexed citations
2.
Beyette, Fred R., et al.. (2002). InGaAs/InP OEIC's for optical computing. 150–153. 1 indexed citations
3.
Zutavern, F.J., Albert G. Baca, Chi‐Wai Chow, et al.. (2002). Electron-hole plasmas in semiconductors. 1. 289–293. 8 indexed citations
4.
Simmons, J. A., J. S. Moon, S. K. Lyo, et al.. (1998). Planar quantum transistor based on 2D–2D tunneling in double quantum well heterostructures. Journal of Applied Physics. 84(10). 5626–5634. 33 indexed citations
5.
Moon, J. S., et al.. (1998). Gate-controlled double electron layer tunnellingtransistor and single transistor digital logic applications. Electronics Letters. 34(9). 921–922. 4 indexed citations
6.
Blum, O., K.M. Geib, M. J. Hafich, J. F. Klem, & Carol I. H. Ashby. (1996). Wet thermal oxidation of AlAsSb lattice matched to InP for optoelectronic applications. Applied Physics Letters. 68(22). 3129–3131. 29 indexed citations
7.
Gilliland, G. D., D. J. Wolford, K. K. Bajaj, et al.. (1995). Optical studies of heterointerfacial growth interrupts in type-II GaAs/AlAs superlattices by time resolved photoluminescence imaging. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 13(4). 1760–1765. 1 indexed citations
8.
Feld, S.A., M. J. Hafich, K.M. Geib, et al.. (1993). InGaP/GaAs light amplifying optical switch. Conference on Lasers and Electro-Optics. 1 indexed citations
9.
Geib, K.M., S.A. Feld, Fred R. Beyette, et al.. (1993). Optoelectronic Logic Arrays Using the Light Amplifying Optical Switch (LAOS). PTuD.8–PTuD.8. 1 indexed citations
10.
Hafich, M. J., et al.. (1992). Gas-source molecular-beam epitaxy growth of InxGa1−x−yAlyP. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 10(2). 969–971. 9 indexed citations
11.
Beyette, Fred R., S.A. Feld, K.M. Geib, et al.. (1991). Gated Optical Latch Based on InGaAs/InP Light Amplifying Optical Switch. WE15–WE15. 2 indexed citations
12.
Hafich, M. J., et al.. (1991). GSMBE growth of GaAs at low AsH3 cracking temperatures. Journal of Crystal Growth. 111(1-4). 507–510. 5 indexed citations
13.
Haase, M. A., M. J. Hafich, & G. Y. Robinson. (1991). Internal photoemission and energy-band offsets in GaAs-GaInP p-I-N heterojunction photodiodes. Applied Physics Letters. 58(6). 616–618. 61 indexed citations
14.
15.
Mahalingam, K., et al.. (1990). Spontaneous Change of Growth Orientation of InGaP/GaAs Superlattices in MBE. MRS Proceedings. 202. 2 indexed citations
16.
Hafich, M. J., et al.. (1990). Heteroepitaxy of InP on Si: Reduction of defects by substrate misorientation and thermal annealing. Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena. 8(2). 261–265. 4 indexed citations
17.
Bowers, John E., et al.. (1990). Design of high speed GaInAs/InP p-i-n photodetectors. 363–366.
18.
Iyer, R., et al.. (1990). Insulated-gate multiple quantum well optical modulator on InP. Applied Physics Letters. 57(19). 1964–1966. 1 indexed citations
19.
Sheldon, P., B. G. Yacobi, S. E. Asher, et al.. (1986). Growth, nucleation, and electrical properties of molecular beam epitaxially grown, As-doped Ge on Si substrates. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 4(3). 889–893. 4 indexed citations
20.
Hafich, M. J., et al.. (1980). PLZT modulators for optical communications. Ferroelectrics. 27(1). 73–76. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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