K. Tomizawa

1.1k total citations
68 papers, 735 citations indexed

About

K. Tomizawa is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics. According to data from OpenAlex, K. Tomizawa has authored 68 papers receiving a total of 735 indexed citations (citations by other indexed papers that have themselves been cited), including 56 papers in Electrical and Electronic Engineering, 41 papers in Atomic and Molecular Physics, and Optics and 10 papers in Condensed Matter Physics. Recurrent topics in K. Tomizawa's work include Semiconductor materials and devices (35 papers), Semiconductor Quantum Structures and Devices (32 papers) and Advancements in Semiconductor Devices and Circuit Design (31 papers). K. Tomizawa is often cited by papers focused on Semiconductor materials and devices (35 papers), Semiconductor Quantum Structures and Devices (32 papers) and Advancements in Semiconductor Devices and Circuit Design (31 papers). K. Tomizawa collaborates with scholars based in Japan, United States and United Kingdom. K. Tomizawa's co-authors include N. Hashizume, Yuji Awano, D. Pavlidis, Jonathan Hu, K. Kuriyama, M. Kawashima, Hin-Fai Chau, K. Yokoyama, Toshiyuki Tsutsumi and S. Kataoka and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

K. Tomizawa

61 papers receiving 667 citations

Peers

K. Tomizawa
P. Kočevar Austria
S. C. Palmateer United States
T.T. Braggins United States
R. N. Gurzhi Ukraine
S.P. Beaumont United Kingdom
F. Berz Finland
Amir A. Lakhani United States
C. Moglestue Germany
P. Kočevar Austria
K. Tomizawa
Citations per year, relative to K. Tomizawa K. Tomizawa (= 1×) peers P. Kočevar

Countries citing papers authored by K. Tomizawa

Since Specialization
Citations

This map shows the geographic impact of K. Tomizawa's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by K. Tomizawa with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites K. Tomizawa more than expected).

Fields of papers citing papers by K. Tomizawa

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by K. Tomizawa. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by K. Tomizawa. The network helps show where K. Tomizawa may publish in the future.

Co-authorship network of co-authors of K. Tomizawa

This figure shows the co-authorship network connecting the top 25 collaborators of K. Tomizawa. A scholar is included among the top collaborators of K. Tomizawa based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with K. Tomizawa. K. Tomizawa is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Yamaguchi, Ken, et al.. (2010). An Accurate and Simplified Modeling of Energy and Momentum Relaxation Rates for Metal–Oxide–Semiconductor Device Simulation. Japanese Journal of Applied Physics. 49(2R). 24303–24303. 2 indexed citations
2.
Tsutsumi, Toshiyuki & K. Tomizawa. (2006). Analysis of Backscattering Phenomenon from Drain Region in Silicon Decanano Diode. Japanese Journal of Applied Physics. 45(9R). 6786–6786. 8 indexed citations
3.
Mendes, Joaquim, et al.. (2005). Printed board positioning system using impact drive mechanism. 1123–1128. 3 indexed citations
4.
Tsutsumi, Toshiyuki, Kenichi Ishii, Hiroshi Hiroshima, et al.. (2002). Close Observation of the Geometrical Features of an Ultranarrow Silicon Nanowire Device. Japanese Journal of Applied Physics. 41(Part 1, No. 6B). 4419–4422. 1 indexed citations
5.
Tsutsumi, Toshiyuki, K. Ishii, Hiroshi Hiroshima, et al.. (2002). Fabrication technology of Si nanodot nanowire memory transistors using an inorganic EB resist process. 182–183.
6.
Tsutsumi, Toshiyuki, Kenichi Ishii, Hiroshi Hiroshima, et al.. (2000). Fabrication technology of a Si nanowire memory transistor using an inorganic electron beam resist process. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 18(6). 2640–2645. 13 indexed citations
7.
Tsutsumi, Toshiyuki, Eiichi Suzuki, Kenichi Ishii, et al.. (1999). Plane-view observation technique of silicon nanowires by transmission electron microscopy. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 17(5). 1897–1902. 3 indexed citations
8.
Kuriyama, K., et al.. (1993). Raman scattering from the filled tetrahedral semiconductor LiZnP. Physical review. B, Condensed matter. 47(20). 13861–13863. 24 indexed citations
9.
Chau, Hin-Fai, Jonathan Hu, D. Pavlidis, & K. Tomizawa. (1992). Breakdown-speed considerations in AlGaAs/GaAs heterojunction bipolar transistors with special collector designs. IEEE Transactions on Electron Devices. 39(12). 2711–2719. 11 indexed citations
10.
Kuriyama, K., K. Yokoyama, & K. Tomizawa. (1991). Annealing behavior of Ga and Ge antisite defects in neutron-transmutation-doped semi-insulating GaAs. Journal of Applied Physics. 70(12). 7315–7317. 15 indexed citations
11.
Awano, Yuji, K. Tomizawa, & N. Hashizume. (1985). ELECTRICAL PERFORMANCES OF GaAs PERMEABLE BASE BALLISTIC ELECTRON TRANSISTORS.. 623–628. 4 indexed citations
12.
Awano, Yuji, K. Tomizawa, & N. Hashizume. (1984). Principles of operation of short-channel gallium arsenide field-effect transistor determined by Monte Carlo method. IEEE Transactions on Electron Devices. 31(4). 448–452. 23 indexed citations
13.
Awano, Yuji, K. Tomizawa, N. Hashizume, & M. Kawashima. (1983). Monte Carlo particle simulation of a GaAs short-channel MESFET. Electronics Letters. 19(1). 20–21. 27 indexed citations
14.
Matsumoto, Kazuhiko, et al.. (1982). Submicron-Length Tungsten-Gate Self-Aligned GaAs FET. Japanese Journal of Applied Physics. 21(7A). L445–L445. 6 indexed citations
15.
Awano, Yuji, K. Tomizawa, N. Hashizume, & M. Kawashima. (1982). Monte Carlo particle simulation of GaAs submicron n + - i - n + diode. Electronics Letters. 18(3). 133–135. 23 indexed citations
16.
Hashizume, N., Hirotaka Yamada, & K. Tomizawa. (1981). Schottky-barrier coupled Schottky-barrier gate GaAs FET logic. Electronics Letters. 17(1). 51–52. 3 indexed citations
17.
Hashizume, N., S. Kataoka, & K. Tomizawa. (1979). Schottky-contact coupling between Schottky-electrode-triggered Gunn elements. IEEE Transactions on Electron Devices. 26(7). 1019–1026. 1 indexed citations
18.
Hashizume, N., S. Kataoka, & K. Tomizawa. (1977). Gunn-effect high-speed carry finding device for 8 bit binary adder. Electronics Letters. 13(21). 637–638. 1 indexed citations
19.
Tomizawa, K., Hiroaki Tateno, & S. Kataoka. (1972). Computer analysis on the static negative resistance due to the geometrical effect of a GaAs bulk element. IEEE Transactions on Electron Devices. 19(12). 1299–1300. 3 indexed citations
20.
Tomizawa, K., M. Kawashima, & S. Kataoka. (1971). New logic functional device using transverse spreading of a high-field domain in n type GaAs. Electronics Letters. 7(10). 239–240. 6 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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