M. Arai

455 total citations
25 papers, 342 citations indexed

About

M. Arai is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics. According to data from OpenAlex, M. Arai has authored 25 papers receiving a total of 342 indexed citations (citations by other indexed papers that have themselves been cited), including 20 papers in Electrical and Electronic Engineering, 19 papers in Atomic and Molecular Physics, and Optics and 3 papers in Condensed Matter Physics. Recurrent topics in M. Arai's work include Semiconductor materials and devices (13 papers), Semiconductor materials and interfaces (8 papers) and Semiconductor Quantum Structures and Devices (7 papers). M. Arai is often cited by papers focused on Semiconductor materials and devices (13 papers), Semiconductor materials and interfaces (8 papers) and Semiconductor Quantum Structures and Devices (7 papers). M. Arai collaborates with scholars based in Japan, Taiwan and United States. M. Arai's co-authors include N. Watanabe, J. Kasahara, N. Watanabe, Katsuhiro Akimoto, K. Taira, M. Kamada, K. Itoh, T. Suzuki, Hiroshi Sakurai and Yasutomo Goto and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and The Journal of Physical Chemistry B.

In The Last Decade

M. Arai

25 papers receiving 312 citations

Peers

M. Arai
N. Watanabe Japan
H.A. Wierenga Netherlands
Alice L. Lin United States
S. M. Shibli̇ Brazil
V. I. Panov Russia
R. W. Kaliski United States
X. Hu United States
N. Puetz Canada
A. M. Hennel Poland
T. Albrecht Germany
N. Watanabe Japan
M. Arai
Citations per year, relative to M. Arai M. Arai (= 1×) peers N. Watanabe

Countries citing papers authored by M. Arai

Since Specialization
Citations

This map shows the geographic impact of M. Arai's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. Arai with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. Arai more than expected).

Fields of papers citing papers by M. Arai

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. Arai. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. Arai. The network helps show where M. Arai may publish in the future.

Co-authorship network of co-authors of M. Arai

This figure shows the co-authorship network connecting the top 25 collaborators of M. Arai. A scholar is included among the top collaborators of M. Arai based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M. Arai. M. Arai is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
2.
Goto, Yasutomo, et al.. (2007). Sum Frequency Generation Spectroscopic Studies on Phase Transitions of Phospholipid Monolayers Containing Poly(ethylene oxide) Lipids at the Air−Water Interface. The Journal of Physical Chemistry B. 111(7). 1693–1700. 28 indexed citations
3.
4.
Arai, M., et al.. (1998). Modified Bagolini striated glass test: clinical applications of starlight test in binocular visual field screening. British Journal of Ophthalmology. 82(11). 1288–1293. 7 indexed citations
5.
Taira, K., et al.. (1987). Band offset effect on transport in AlxGa1-xAs/GaAs heterojunction bipolar transistors grown by metalorganic chemical vapor deposition. IEEE Transactions on Electron Devices. 34(10). 2040–2042. 3 indexed citations
6.
Kasahara, J., et al.. (1986). Thermal etching of GaAs by hydrogen under arsenic overpressure. Journal of Applied Physics. 60(4). 1501–1504. 13 indexed citations
7.
Akimoto, Katsuhiro, M. Kamada, K. Taira, M. Arai, & N. Watanabe. (1986). Photoluminescence killer center in AlGaAs grown by molecular-beam epitaxy. Journal of Applied Physics. 59(8). 2833–2836. 59 indexed citations
8.
Tanaka, Kunihiko, et al.. (1986). A low-noise microwave HEMT using MOCVD. IEEE Transactions on Electron Devices. 33(5). 595–600. 8 indexed citations
9.
Kasahara, J., M. Arai, & N. Watanabe. (1986). Improvement of Vthcontrol for GaAs FET's by shallow-channel ion implantation. IEEE Transactions on Electron Devices. 33(1). 28–33. 9 indexed citations
10.
Taira, K., et al.. (1986). Emitter grading in AlGaAs/GaAs heterojunction bipolar transistor grown by metalorganic chemical vapor deposition. Applied Physics Letters. 49(19). 1278–1280. 14 indexed citations
11.
Kasahara, J., et al.. (1985). Tem Structural Studies on Zn+ Implanted and As+ /Zn+ Dually Implanted GaAs. MRS Proceedings. 45. 2 indexed citations
12.
Kasahara, J., M. Arai, & N. Watanabe. (1985). Extremely uniform threshold voltage distribution of GaAs FET made on LEC-grown crystals. Electronics Letters. 21(22). 1040–1042. 5 indexed citations
13.
Akimoto, Katsuhiro, et al.. (1984). Infrared absorption and low-temperature photoluminescence spectra of GaAs grown by molecular beam epitaxy. Applied Physics Letters. 45(9). 922–924. 17 indexed citations
14.
Suzuki, T., Hiroshi Sakurai, & M. Arai. (1983). Infrared rapid annealing of Zn-implanted GaAs. Applied Physics Letters. 43(10). 951–953. 15 indexed citations
15.
Akimoto, Katsuhiro, et al.. (1983). As4/Ga flux ratio dependence on Si incorporation in molecular beam epitaxial GaAs. Applied Physics Letters. 43(11). 1062–1064. 16 indexed citations
16.
Taira, K., J. Kasahara, Yoji Kato, M. Arai, & N. Watanabe. (1983). p+-n junction formed by dual implantation of Zn and As in GaAs junction field-effect transistors. IEEE Electron Device Letters. 4(9). 314–316. 2 indexed citations
17.
Kasahara, J., Yukio Kato, M. Arai, & N. Watanabe. (1983). The Effect of Stress on the Redistribution of Implanted Impurities in GaAs. Journal of The Electrochemical Society. 130(11). 2275–2279. 15 indexed citations
18.
Kasahara, J., M. Arai, & N. Watanabe. (1979). Suppression of thermal conversion in Cr-doped semi-insulating GaAs. Journal of Applied Physics. 50(12). 8229–8231. 8 indexed citations
19.
Kasahara, J., M. Arai, & N. Watanabe. (1979). Capless anneal of ion-implanted GaAs in controlled arsenic vapor. Journal of Applied Physics. 50(1). 541–543. 39 indexed citations
20.
Arai, M.. (1973). Charge storage junction field-effect transistor. 72–74. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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