K. Taira

835 total citations
44 papers, 687 citations indexed

About

K. Taira is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, K. Taira has authored 44 papers receiving a total of 687 indexed citations (citations by other indexed papers that have themselves been cited), including 35 papers in Electrical and Electronic Engineering, 34 papers in Atomic and Molecular Physics, and Optics and 7 papers in Materials Chemistry. Recurrent topics in K. Taira's work include Semiconductor Quantum Structures and Devices (31 papers), Advanced Semiconductor Detectors and Materials (17 papers) and Semiconductor materials and devices (11 papers). K. Taira is often cited by papers focused on Semiconductor Quantum Structures and Devices (31 papers), Advanced Semiconductor Detectors and Materials (17 papers) and Semiconductor materials and devices (11 papers). K. Taira collaborates with scholars based in Japan, Taiwan and United States. K. Taira's co-authors include H. Kawai, Fumihiko Nakamura, Takashi Kobayashi, Kazunori Ikebukuro, Koji Sode, Hijiri Hasegawa, M. Arai, Kazumasa Nomoto, T. Suzuki and N. Watanabe and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

K. Taira

43 papers receiving 664 citations

Peers

K. Taira

EEE

AMPO

H. Wawra Germany

П. М. Ветошко Russia

B. Goldstein United States

Dallas Morisette United States

M.I. Alayo Brazil

Kuninori Kitahara Japan

Justin Llandro United Kingdom

M. M. Kamna United States

Shahrir R. Kasjoo Malaysia

T. Geppert Germany

H. Wawra Germany

K. Taira

306 ×0.6

EEE

413 ×0.9

AMPO

52 ×0.4

101 ×1.1

213 ×2.5

Citations per year, relative to K. Taira K. Taira (= 1×) peers H. Wawra

Countries citing papers authored by K. Taira

Since Specialization

Citations

This map shows the geographic impact of K. Taira's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by K. Taira with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites K. Taira more than expected).

Fields of papers citing papers by K. Taira

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by K. Taira. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by K. Taira. The network helps show where K. Taira may publish in the future.

Co-authorship network of co-authors of K. Taira

This figure shows the co-authorship network connecting the top 25 collaborators of K. Taira. A scholar is included among the top collaborators of K. Taira based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with K. Taira. K. Taira is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Taira, K.. (2009). . Journal of The Japan Institute of Electronics Packaging. 12(6). 488–491. 1 indexed citations

Uehara, Satoshi, et al.. (2000). Porous Silicon Refractive Index Lattices. physica status solidi (a). 182(1). 443–446. 1 indexed citations

Nomoto, Kazumasa, et al.. (1997). Diameter dependence of current–voltage characteristics of ultrasmall area AlSb–InAs resonant tunneling diodes with diameters down to 20 nm. Applied Physics Letters. 70(15). 2025–2027. 15 indexed citations

Suzuki, T., et al.. (1997). Tunneling Spectroscopy of InAs Wetting Layers and Self-Assembled Quantum Dots: Resonant Tunneling through Two- and Zero-Dimensional Electronic States. Japanese Journal of Applied Physics. 36(3S). 1917–1917. 36 indexed citations

Takamasu, T., N. Miura, K. Taira, Kazuo Funato, & H. Kawai. (1992). Quantum transport phenomena in InAs/GaSb/InAs tunneling devices under high magnetic fields. Surface Science. 263(1-3). 217–221. 6 indexed citations

Taira, K., Kazuo Funato, Fumihiko Nakamura, & H. Kawai. (1991). InAs quantum-well-base InAs/GaSb hot-electron transistors. Journal of Applied Physics. 69(8). 4454–4456. 11 indexed citations

Funato, Kazuo, K. Taira, Fumihiko Nakamura, & H. Kawai. (1991). Thermionic emission of Γ and L electrons in the GaSb/InAs hot-electron transistors. Applied Physics Letters. 59(14). 1714–1716. 3 indexed citations

Taira, K., et al.. (1991). InAs-GaSb hot electron transistors grown by metalorganic chemical vapor deposition. Journal of Crystal Growth. 107(1-4). 952–955. 8 indexed citations

Taira, K., et al.. (1990). InAs/GaSb Hot Electron Transistors Grown by Low-Pressure Metalorganic Chemical Vapor Deposition. Japanese Journal of Applied Physics. 29(12A). L2414–L2414. 4 indexed citations

10.

Kamada, M., et al.. (1990). Electrical inhomogeneity in alloyed AuGeNi contact formed on GaAs. Solid-State Electronics. 33(8). 999–1003. 2 indexed citations

11.

Taira, K., et al.. (1989). Response to ‘‘Comment on ‘Noninteger InAs monolayer well InAs/GaAs single quantum well structures grown by metalorganic chemical vapor deposition’ ’’ [Appl. Phys. Lett. 5 5, 1689 (1989)]. Applied Physics Letters. 55(16). 1690–1690. 2 indexed citations

12.

Taira, K., et al.. (1989). I n s i t u monitoring of selective etch of III–V compound semiconductor heterostructures. Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena. 7(4). 618–620. 4 indexed citations

13.

Kobayashi, Takashi, K. Taira, Fumihiko Nakamura, & H. Kawai. (1989). Band lineup for a GaInP/GaAs heterojunction measured by a high-gain N p n heterojunction bipolar transistor grown by metalorganic chemical vapor deposition. Journal of Applied Physics. 65(12). 4898–4902. 137 indexed citations

14.

Taira, K., et al.. (1988). Noninteger InAs monolayer well InAs/GaAs single quantum well structures grown by metalorganic chemical vapor deposition. Applied Physics Letters. 53(6). 495–496. 27 indexed citations

15.

Taira, K., H. Kawai, & K. Kaneko. (1988). Nonequilibrium electron transport in an AlGaAs/GaAs double-heterojunction bipolar transistor. Journal of Applied Physics. 64(5). 2767–2769. 1 indexed citations

16.

Akimoto, Katsuhiro, M. Kamada, K. Taira, M. Arai, & N. Watanabe. (1986). Photoluminescence killer center in AlGaAs grown by molecular-beam epitaxy. Journal of Applied Physics. 59(8). 2833–2836. 59 indexed citations

17.

Taira, K., et al.. (1984). New lateral GaAs transistor. 201–204. 1 indexed citations

18.

Kasahara, J., K. Taira, Yoji Kato, Michio Arai, & N. Watanabe. (1983). Formation of p⁺-layer in GaAs by dual implantation of Zn and As. Japanese Journal of Applied Physics. 22(6A). L373–L373. 18 indexed citations

19.

Taira, K., J. Kasahara, Yoji Kato, M. Arai, & N. Watanabe. (1983). p⁺-n junction formed by dual implantation of Zn and As in GaAs junction field-effect transistors. IEEE Electron Device Letters. 4(9). 314–316. 2 indexed citations

20.

Kasahara, J., et al.. (1981). Fully ion-implanted GaAs ICs using normally-off JFETs. Electronics Letters. 17(17). 621–623. 5 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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