R. W. Kaliski

658 total citations
36 papers, 541 citations indexed

About

R. W. Kaliski is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics. According to data from OpenAlex, R. W. Kaliski has authored 36 papers receiving a total of 541 indexed citations (citations by other indexed papers that have themselves been cited), including 31 papers in Electrical and Electronic Engineering, 30 papers in Atomic and Molecular Physics, and Optics and 7 papers in Condensed Matter Physics. Recurrent topics in R. W. Kaliski's work include Semiconductor Quantum Structures and Devices (26 papers), Semiconductor materials and devices (15 papers) and Semiconductor materials and interfaces (9 papers). R. W. Kaliski is often cited by papers focused on Semiconductor Quantum Structures and Devices (26 papers), Semiconductor materials and devices (15 papers) and Semiconductor materials and interfaces (9 papers). R. W. Kaliski collaborates with scholars based in United States. R. W. Kaliski's co-authors include N. Holonyak, K. C. Hsieh, R. D. Burnham, T. L. Paoli, R. L. Thornton, J. E. Epler, L. J. Guido, D. W. Nam, W. E. Plano and C. R. Lewis and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Transactions on Electron Devices.

In The Last Decade

R. W. Kaliski

35 papers receiving 506 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
R. W. Kaliski United States 13 464 433 75 47 31 36 541
T. Bryśkiewicz United States 12 264 0.6× 212 0.5× 191 2.5× 30 0.6× 25 0.8× 30 470
K. Konnerth United States 10 346 0.7× 237 0.5× 51 0.7× 21 0.4× 32 1.0× 13 397
M. Arai Japan 11 245 0.5× 250 0.6× 39 0.5× 43 0.9× 40 1.3× 25 342
Kiichi Nakashima Japan 11 264 0.6× 280 0.6× 68 0.9× 14 0.3× 29 0.9× 27 328
N. Puetz Canada 16 618 1.3× 484 1.1× 76 1.0× 27 0.6× 29 0.9× 40 715
М. В. Максимов Russia 15 619 1.3× 623 1.4× 231 3.1× 14 0.3× 41 1.3× 88 722
A. R. Goodwin United Kingdom 12 487 1.0× 399 0.9× 100 1.3× 42 0.9× 21 0.7× 34 562
C. Y. Ngo Singapore 11 319 0.7× 352 0.8× 116 1.5× 14 0.3× 33 1.1× 42 436
F. Brillouet France 11 445 1.0× 354 0.8× 37 0.5× 28 0.6× 27 0.9× 32 485
K. Wakao Japan 14 495 1.1× 363 0.8× 27 0.4× 27 0.6× 28 0.9× 57 528

Countries citing papers authored by R. W. Kaliski

Since Specialization
Citations

This map shows the geographic impact of R. W. Kaliski's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by R. W. Kaliski with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites R. W. Kaliski more than expected).

Fields of papers citing papers by R. W. Kaliski

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by R. W. Kaliski. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by R. W. Kaliski. The network helps show where R. W. Kaliski may publish in the future.

Co-authorship network of co-authors of R. W. Kaliski

This figure shows the co-authorship network connecting the top 25 collaborators of R. W. Kaliski. A scholar is included among the top collaborators of R. W. Kaliski based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with R. W. Kaliski. R. W. Kaliski is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Kaliski, R. W., et al.. (2021). Heterostructure Phototransistor Arrays for Free-Space Laser Communications. 10177. 1–10. 1 indexed citations
2.
Feng, Wei, et al.. (1990). Graded heterojunction ion-implanted FETs: a combination of heteroepitaxy and ion implantation. IEEE Transactions on Electron Devices. 37(3). 816–818. 1 indexed citations
3.
Kaliski, R. W., et al.. (1990). Misfit In0.18Ga0.82As/GaAs metal-semiconductor field-effect transistors with improved Schottky gate characteristics. Applied Physics Letters. 56(20). 1995–1997. 2 indexed citations
4.
Feng, M., et al.. (1989). Enhanced microwave performance of ion-implanted MESFET with graded GaAs/AlGaAs heterojunctions. Electronics Letters. 25(17). 1105–1106. 1 indexed citations
5.
Feng, M., et al.. (1989). Ion-implanted GaAs/AlGaAs heterojunction FET's grown by MOCVD. IEEE Electron Device Letters. 10(6). 264–266. 1 indexed citations
6.
Feng, M., et al.. (1989). Millimeter-wave ion-implanted graded In/sub x/Ga/sub 1-x/As MESFETs grown by MOCVD. IEEE Electron Device Letters. 10(10). 449–451. 7 indexed citations
7.
Hsieh, K. C., M. Feng, G. E. Stillman, et al.. (1988). Effect of Substrate Misorientation on the Structual Strain and Defect Distribution of Mocvd Grown GaAs on Si. MRS Proceedings. 116. 4 indexed citations
8.
Kaliski, R. W., et al.. (1988). Influence of annealing and substrate orientation on metalorganic chemical vapor deposition GaAs on silicon heteroepitaxy. Journal of Applied Physics. 64(3). 1196–1200. 33 indexed citations
9.
Ito, C., et al.. (1988). Full functionality of LSI gate arrays fabricated on 3-in-diameter, MOCVD-grown GaAs-on-silicon substrates. IEEE Electron Device Letters. 9(8). 371–373. 6 indexed citations
10.
Kaliski, R. W., D. W. Nam, D.G. Deppe, et al.. (1987). Thermal annealing and photoluminescence measurements on AlxGa1−xAs-GaAs quantum-well heterostructures with Se and Mg sheet doping. Journal of Applied Physics. 62(3). 998–1005. 20 indexed citations
11.
Guido, L. J., K. C. Hsieh, N. Holonyak, et al.. (1987). Impurity induced layer disordering of Si implanted AlxGa1−xAs-GaAs quantum-well heterostructures: Layer disordering via diffusion from extrinsic dislocation loops. Journal of Applied Physics. 61(4). 1329–1334. 21 indexed citations
12.
Burnham, R. D., N. Holonyak, K. C. Hsieh, et al.. (1986). Quantum well AlxGa1−xAs-GaAs lasers with internal (Si2)x(GaAs)1−x barriers. Applied Physics Letters. 48(12). 800–802. 14 indexed citations
13.
Meehan, Kathleen, K. C. Hsieh, G. Costrini, et al.. (1986). Stacking and layer disordering of AlxGa1−xAs-GaAs quantum well heterostructures. Applied Physics Letters. 48(13). 861–863. 2 indexed citations
14.
Hsieh, K. C., R. W. Kaliski, N. Holonyak, et al.. (1986). High-energy stimulated emission in GaAs quantum wells coupled with (Si2)x(GaAs)1−x barriers (ℏω≳E L, E X). Applied Physics Letters. 48(14). 943–945. 8 indexed citations
15.
Kaliski, R. W., N. Holonyak, K. C. Hsieh, et al.. (1986). Photopumped laser operation of AlxGa1−xAs-GaAs quantum well heterostructures with Se and Mg sheet doping. Applied Physics Letters. 49(20). 1390–1392. 4 indexed citations
16.
Kaliski, R. W., P. Gavrilovič, Kathleen Meehan, et al.. (1985). Photoluminescence and stimulated emission in Si- and Ge-disordered AlxGa1−xAs-GaAs superlattices. Journal of Applied Physics. 58(1). 101–107. 23 indexed citations
17.
Epler, J. E., R. W. Kaliski, N. Holonyak, et al.. (1985). Hydrostatic pressure measurements (≲12 kbar) on single- and multiple-stripe quantum-well heterostructure laser diodes. Journal of Applied Physics. 57(5). 1495–1499. 7 indexed citations
18.
Kaliski, R. W., J. E. Epler, N. Holonyak, et al.. (1985). Pressure dependence of AlxGa1−xAs light emitting diodes near the direct-indirect transition. Journal of Applied Physics. 57(5). 1734–1738. 3 indexed citations
19.
Gavrilovič, P., J. Gavrilovič, Kathleen Meehan, et al.. (1985). Si-Si pair diffusion and correlation in AlxGa1−xAs and GaAs. Applied Physics Letters. 47(7). 710–712. 5 indexed citations
20.
Camras, M. D., Judith M. Brown, N. Holonyak, et al.. (1983). Stimulated emission in strained-layer quantum-well heterostructures. Journal of Applied Physics. 54(11). 6183–6189. 60 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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