N. Watanabe

2.1k total citations
91 papers, 1.7k citations indexed

About

N. Watanabe is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, N. Watanabe has authored 91 papers receiving a total of 1.7k indexed citations (citations by other indexed papers that have themselves been cited), including 75 papers in Electrical and Electronic Engineering, 70 papers in Atomic and Molecular Physics, and Optics and 16 papers in Materials Chemistry. Recurrent topics in N. Watanabe's work include Semiconductor Quantum Structures and Devices (58 papers), Semiconductor materials and devices (30 papers) and Semiconductor Lasers and Optical Devices (21 papers). N. Watanabe is often cited by papers focused on Semiconductor Quantum Structures and Devices (58 papers), Semiconductor materials and devices (30 papers) and Semiconductor Lasers and Optical Devices (21 papers). N. Watanabe collaborates with scholars based in Japan, United States and Taiwan. N. Watanabe's co-authors include K. Kaneko, H. Kawai, Yoshifumi Mori, J. Kasahara, Masao Ikeda, Yukie Mori, Michio Arai, Akira Ishibashi, S. Usui and Masao Itabashi and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

N. Watanabe

88 papers receiving 1.5k citations

Peers

N. Watanabe
W. Kopp United States
G. A. Antypas United States
J.P. Ponpon France
P. W. Yu United States
M. Van Rossum Belgium
L. Jastrzȩbski United States
J. Hallais France
Osamu Mikami Japan
P. A. Barnes United States
S. Petersson Sweden
W. Kopp United States
N. Watanabe
Citations per year, relative to N. Watanabe N. Watanabe (= 1×) peers W. Kopp

Countries citing papers authored by N. Watanabe

Since Specialization
Citations

This map shows the geographic impact of N. Watanabe's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by N. Watanabe with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites N. Watanabe more than expected).

Fields of papers citing papers by N. Watanabe

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by N. Watanabe. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by N. Watanabe. The network helps show where N. Watanabe may publish in the future.

Co-authorship network of co-authors of N. Watanabe

This figure shows the co-authorship network connecting the top 25 collaborators of N. Watanabe. A scholar is included among the top collaborators of N. Watanabe based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with N. Watanabe. N. Watanabe is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Watanabe, N., et al.. (1993). In-Depth Profile of Electrical Property of InAs Epitaxial Layer Grown on Semi-Insulating GaAs by Low-Pressure Metalorganic Chemical Vapor Deposition. Japanese Journal of Applied Physics. 32(3B). L368–L368. 7 indexed citations
2.
Moriyama, Makoto, et al.. (1991). New Light Modulator Using GaSe Layered Crystal. Japanese Journal of Applied Physics. 30(1A). L42–L42. 14 indexed citations
3.
4.
Watanabe, N., T. Nakanisi, & P.D. Dapkus. (1988). Metalorganic vapor phase epitaxy 1988; Proceedings of the Fourth International Conference, Hakone, Japan, May 16-20, 1988. Journal of Crystal Growth. 93. 1 indexed citations
5.
Kawai, H., et al.. (1987). Intervalley scattering observed in an AlGaAs/GaAs hot-electron transistor. Journal of Applied Physics. 62(6). 2558–2560. 8 indexed citations
6.
Ikeda, Masao, K. Nakano, Yoshifumi Mori, K. Kaneko, & N. Watanabe. (1986). Room-temperature continuous-wave operation of an AlGaInP mesa stripe laser. Applied Physics Letters. 48(2). 89–91. 35 indexed citations
7.
Kasahara, J., et al.. (1986). Thermal etching of GaAs by hydrogen under arsenic overpressure. Journal of Applied Physics. 60(4). 1501–1504. 13 indexed citations
8.
Watanabe, N. & Yukie Mori. (1986). Ultrathin GaAs/GaAlAs layers grown by MOCVD and their structural characterization. Surface Science. 174(1-3). 10–18. 10 indexed citations
9.
Kasahara, J., Hiroshi Sakurai, T. Suzuki, M. Arai, & N. Watanabe. (1985). The Effect of Channeling on the LSI-Grade Uniformity of GaAs-FETs by Ion Implantation. 37–40. 2 indexed citations
10.
Kawai, H., et al.. (1985). MOCVD-grown AlGaAs/GaAs hot-electron transistor with a base width of 30 nm. Electronics Letters. 21(17). 757–758. 6 indexed citations
11.
Kawai, H., et al.. (1984). AlGaAs/GaAs quantum structures grown by MOCVD — Coupled quantum well photoluminescence and vertical transport through hetero-barriers. Journal of Crystal Growth. 68(1). 406–411. 18 indexed citations
12.
Ikeda, Masao, et al.. (1984). Yellow-emitting AlGaInP double heterostructure laser diode at 77 K grown by atmospheric metalorganic chemical vapor deposition. Applied Physics Letters. 45(9). 964–966. 26 indexed citations
13.
Matsuda, Osamu, et al.. (1983). MOCVD Grown (AlGa)As Lasers in the Visible Wavelength Region Shorter than 780 nm. Japanese Journal of Applied Physics. 22(S1). 589–589. 5 indexed citations
14.
Kasahara, J., Hiroshi Sakurai, Yoji Kato, & N. Watanabe. (1982). Redistrubution of Zn Implanted into GaAs. Japanese Journal of Applied Physics. 21(2A). L103–L103. 9 indexed citations
15.
Kasahara, J., et al.. (1981). Fully ion-implanted GaAs ICs using normally-off JFETs. Electronics Letters. 17(17). 621–623. 5 indexed citations
16.
Matsuda, Osamu, et al.. (1980). An Improved Etched Buried Heterostructure Laser with Reduced Threshold Current : B-3: LASER. Japanese Journal of Applied Physics. 19(1). 399–402.
17.
Kasahara, J., et al.. (1980). Planar GaAs normally-off j.f.e.t. for high speed logic circuits. Electronics Letters. 16(21). 821–822. 2 indexed citations
18.
Kasahara, J., M. Arai, & N. Watanabe. (1979). Suppression of thermal conversion in Cr-doped semi-insulating GaAs. Journal of Applied Physics. 50(12). 8229–8231. 8 indexed citations
19.
Watanabe, N.. (1966). Forward and Reverse Biased Electroluminescence in Alloyed ZnTe Diodes. Japanese Journal of Applied Physics. 5(1). 12–18. 8 indexed citations
20.
Kanai, Yasuo, et al.. (1961). Electrical Properties of Lead Telluride. Journal of Applied Physics. 32(10). 2146–2150. 28 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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