M. Arafa

900 total citations
24 papers, 717 citations indexed

About

M. Arafa is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Biomedical Engineering. According to data from OpenAlex, M. Arafa has authored 24 papers receiving a total of 717 indexed citations (citations by other indexed papers that have themselves been cited), including 24 papers in Electrical and Electronic Engineering, 21 papers in Atomic and Molecular Physics, and Optics and 2 papers in Biomedical Engineering. Recurrent topics in M. Arafa's work include Semiconductor Quantum Structures and Devices (19 papers), Semiconductor materials and devices (15 papers) and Advancements in Semiconductor Devices and Circuit Design (11 papers). M. Arafa is often cited by papers focused on Semiconductor Quantum Structures and Devices (19 papers), Semiconductor materials and devices (15 papers) and Advancements in Semiconductor Devices and Circuit Design (11 papers). M. Arafa collaborates with scholars based in United States, Egypt and Kazakhstan. M. Arafa's co-authors include J. O. Chu, K. Ismail, B.S. Meyerson, I. Adesida, K. L. Saenger, Patrick Fay, A. Mahajan, C. Caneau, P. M. Mooney and F. K. LeGoues and has published in prestigious journals such as Physical Review Letters, Applied Physics Letters and IEEE Transactions on Electron Devices.

In The Last Decade

M. Arafa

23 papers receiving 684 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
M. Arafa United States	13	629	406	122	106	46	24	717
C.I. Huang United States	14	608 1.0×	312 0.8×	48 0.4×	48 0.5×	65 1.4×	57	681
P. Packan United States	18	1.0k 1.7×	163 0.4×	101 0.8×	184 1.7×	14 0.3×	32	1.1k
C. Krafft United States	12	235 0.4×	273 0.7×	77 0.6×	70 0.7×	70 1.5×	82	475
J. DeBrosse United States	11	457 0.7×	249 0.6×	41 0.3×	59 0.6×	40 0.9×	22	602
J.R. Watling United Kingdom	16	813 1.3×	250 0.6×	124 1.0×	192 1.8×	23 0.5×	70	972
D. Becher United States	10	613 1.0×	119 0.3×	125 1.0×	34 0.3×	84 1.8×	20	652
F. Arnaud France	14	801 1.3×	111 0.3×	101 0.8×	131 1.2×	11 0.2×	63	838
P.J. Zampardi United States	18	982 1.6×	212 0.5×	82 0.7×	61 0.6×	166 3.6×	115	1.1k
C. Wann United States	19	1.6k 2.6×	257 0.6×	246 2.0×	148 1.4×	41 0.9×	59	1.7k
H.-J. Wann United States	10	863 1.4×	105 0.3×	93 0.8×	89 0.8×	22 0.5×	18	885

Countries citing papers authored by M. Arafa

Since Specialization

Citations

This map shows the geographic impact of M. Arafa's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. Arafa with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. Arafa more than expected).

Fields of papers citing papers by M. Arafa

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. Arafa. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. Arafa. The network helps show where M. Arafa may publish in the future.

Co-authorship network of co-authors of M. Arafa

This figure shows the co-authorship network connecting the top 25 collaborators of M. Arafa. A scholar is included among the top collaborators of M. Arafa based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M. Arafa. M. Arafa is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Arafa, M., et al.. (2019). Cascade Lake: Next Generation Intel Xeon Scalable Processor. IEEE Micro. 39(2). 29–36. 46 indexed citations

Mahajan, A., et al.. (2002). Ring oscillator using InAlAs/InGaAs/InP enhancement/depletion-mode high electron mobility transistor direct-coupled FET logic inverters. e75 c. 157–160. 1 indexed citations

Mahajan, A., M. Arafa, Patrick Fay, C. Caneau, & I. Adesida. (2002). 160 GHz enhancement-mode InAlAs/InGaAs/InP high electron mobility transistor. 132–133. 3 indexed citations

Arafa, M., et al.. (2002). High performance self-aligned SiGe p-type modulation-doped field-effect transistors. 24–25. 1 indexed citations

Mahajan, A., Patrick Fay, M. Arafa, & I. Adesida. (1998). Integration of InAlAs/InGaAs/InP enhancement- and depletion-mode high electron mobility transistors for high-speed circuit applications. IEEE Transactions on Electron Devices. 45(1). 338–340. 17 indexed citations

Wohlmuth, W., M. Arafa, Patrick Fay, & I. Adesida. (1997). InGaAs metal-semiconductor-metal photodetectors with a hybrid combination of transparent and opaque electrodes. Applied Physics Letters. 70(22). 3026–3028. 6 indexed citations

Wohlmuth, W., et al.. (1997). Impulse Response of Metal-Semiconductor-Metal Photodetectors Using a Conformal Mapping Technique and Extracted Circuit Parameters. Japanese Journal of Applied Physics. 36(2R). 652–652. 3 indexed citations

Mahajan, A., et al.. (1997). Fabrication and characterization of an InAlAs/InGaAs/InP ring oscillator using integrated enhancement- and depletion-mode high-electron mobility transistors. IEEE Electron Device Letters. 18(8). 391–393. 22 indexed citations

Adesida, I., M. Arafa, K. Ismail, J. O. Chu, & B.S. Meyerson. (1997). Submicrometer p-type SiGe modulation-doped field-effect transistors for high speed applications. Microelectronic Engineering. 35(1-4). 257–260. 10 indexed citations

10.

Fay, Patrick, M. Arafa, W. Wohlmuth, et al.. (1997). Design, fabrication, and performance of high-speed monolithically integrated InAlAs/InGaAs/InP MSM/HEMT photoreceivers. Journal of Lightwave Technology. 15(10). 1871–1879. 10 indexed citations

11.

Ismail, K., J. O. Chu, & M. Arafa. (1997). Integrated enhancement- and depletion-mode FET's in modulation-doped Si/SiGe heterostructures. IEEE Electron Device Letters. 18(9). 435–437. 13 indexed citations

12.

Arafa, M., K. Ismail, J. O. Chu, B.S. Meyerson, & I. Adesida. (1996). A 70-GHz f/sub T/ low operating bias self-aligned p-type SiGe MODFET. IEEE Electron Device Letters. 17(12). 586–588. 38 indexed citations

13.

Arafa, M., Patrick Fay, K. Ismail, et al.. (1996). DC and RF performance of 0.25 μm p-type SiGe MODFET. IEEE Electron Device Letters. 17(9). 449–451. 20 indexed citations

14.

Arafa, M., Patrick Fay, K. Ismail, et al.. (1996). High speed p-type SiGe modulation-doped field-effect transistors. IEEE Electron Device Letters. 17(3). 124–126. 51 indexed citations

15.

Wohlmuth, W., M. Arafa, A. Mahajan, Patrick Fay, & I. Adesida. (1996). InGaAs metal-semiconductor-metal photodetectors with engineered Schottky barrier heights. Applied Physics Letters. 69(23). 3578–3580. 32 indexed citations

16.

Arafa, M., K. Ismail, Patrick Fay, et al.. (1995). High-transconductance p -type SiGe modulation-dopedfield-effect transistor. Electronics Letters. 31(8). 680–681. 9 indexed citations

17.

Ismail, K., M. Arafa, Frank Stern, J. O. Chu, & B.S. Meyerson. (1995). Gated Hall effect measurements in high-mobility n-type Si/SiGe modulation-doped heterostructures. Applied Physics Letters. 66(7). 842–844. 34 indexed citations

18.

Ismail, K., M. Arafa, K. L. Saenger, J. O. Chu, & B.S. Meyerson. (1995). Extremely high electron mobility in Si/SiGe modulation-doped heterostructures. Applied Physics Letters. 66(9). 1077–1079. 180 indexed citations

19.

Arafa, M., C. Youtsey, R. Grundbacher, I. Adesida, & J. F. Klem. (1994). Fabrication of nanostructures in AlGaSb/InAs using electron-beam lithography and chemically assisted ion-beam etching. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 12(6). 3623–3625. 7 indexed citations

20.

Ismail, K., F. K. LeGoues, K. L. Saenger, et al.. (1994). Identification of a Mobility-Limiting Scattering Mechanism in Modulation-Doped Si/SiGe Heterostructures. Physical Review Letters. 73(25). 3447–3450. 128 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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