M. Aldegunde

885 total citations
66 papers, 678 citations indexed

About

M. Aldegunde is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Biomedical Engineering. According to data from OpenAlex, M. Aldegunde has authored 66 papers receiving a total of 678 indexed citations (citations by other indexed papers that have themselves been cited), including 61 papers in Electrical and Electronic Engineering, 16 papers in Atomic and Molecular Physics, and Optics and 9 papers in Biomedical Engineering. Recurrent topics in M. Aldegunde's work include Advancements in Semiconductor Devices and Circuit Design (59 papers), Semiconductor materials and devices (51 papers) and Silicon Carbide Semiconductor Technologies (26 papers). M. Aldegunde is often cited by papers focused on Advancements in Semiconductor Devices and Circuit Design (59 papers), Semiconductor materials and devices (51 papers) and Silicon Carbide Semiconductor Technologies (26 papers). M. Aldegunde collaborates with scholars based in United Kingdom, Spain and Egypt. M. Aldegunde's co-authors include Antonio J. García‐Loureiro, K. Kálna, Natalia Seoane, John R. Barker, A. Martı́nez, Asen Asenov, Guillermo Indalecio, Antonio Beltrán Martínez, Daniel Nagy and Nicholas Zabaras and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of Computational Physics.

In The Last Decade

M. Aldegunde

63 papers receiving 665 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
M. Aldegunde United Kingdom 16 609 146 114 86 13 66 678
Katsuya Oda Japan 16 702 1.2× 150 1.0× 250 2.2× 118 1.4× 8 0.6× 90 731
T. Manku Canada 16 881 1.4× 173 1.2× 191 1.7× 59 0.7× 29 2.2× 59 917
J.R. Watling United Kingdom 16 813 1.3× 124 0.8× 250 2.2× 192 2.2× 23 1.8× 70 972
M. Togo Japan 14 599 1.0× 69 0.5× 62 0.5× 66 0.8× 7 0.5× 68 619
Eiji Yoshida Japan 12 383 0.6× 74 0.5× 93 0.8× 108 1.3× 9 0.7× 34 458
Cezar B. Zota Switzerland 15 599 1.0× 223 1.5× 141 1.2× 79 0.9× 14 1.1× 54 656
L. Ciampolini France 9 321 0.5× 56 0.4× 115 1.0× 55 0.6× 6 0.5× 35 361
Andy Stricker United States 13 741 1.2× 73 0.5× 164 1.4× 25 0.3× 16 1.2× 23 772
F. Van de Wiele Belgium 14 672 1.1× 72 0.5× 123 1.1× 69 0.8× 11 0.8× 67 710

Countries citing papers authored by M. Aldegunde

Since Specialization
Citations

This map shows the geographic impact of M. Aldegunde's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. Aldegunde with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. Aldegunde more than expected).

Fields of papers citing papers by M. Aldegunde

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. Aldegunde. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. Aldegunde. The network helps show where M. Aldegunde may publish in the future.

Co-authorship network of co-authors of M. Aldegunde

This figure shows the co-authorship network connecting the top 25 collaborators of M. Aldegunde. A scholar is included among the top collaborators of M. Aldegunde based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M. Aldegunde. M. Aldegunde is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Aldegunde, M., et al.. (2018). Narrowing of band gap at source/drain contact scheme of nanoscale InAs–nMOS. Solid-State Electronics. 142. 31–35. 1 indexed citations
2.
Nagy, Daniel, M. Aldegunde, Muhammad A. Elmessary, et al.. (2018). Modelling of nanoscale multi-gate transistors affected by atomistic interface roughness. Journal of Physics Condensed Matter. 30(14). 144006–144006. 1 indexed citations
3.
Elmessary, Muhammad A., Daniel Nagy, M. Aldegunde, Antonio J. García‐Loureiro, & K. Kálna. (2017). Study of strained effects in nanoscale GAA nanowire FETs using 3D Monte Carlo simulations. 184–187. 1 indexed citations
4.
Elmessary, Muhammad A., Daniel Nagy, M. Aldegunde, et al.. (2016). Anisotropic Quantum Corrections for 3-D Finite-Element Monte Carlo Simulations of Nanoscale Multigate Transistors. IEEE Transactions on Electron Devices. 63(3). 933–939. 17 indexed citations
5.
Lindberg, Jari, M. Aldegunde, Daniel Nagy, et al.. (2014). Quantum Corrections Based on the 2-D Schrödinger Equation for 3-D Finite Element Monte Carlo Simulations of Nanoscaled FinFETs. IEEE Transactions on Electron Devices. 61(2). 423–429. 34 indexed citations
6.
Aldegunde, M., et al.. (2014). Quantum transport of a nanowire field-effect transistor with complex phonon self–energy. Journal of Applied Physics. 116(8). 14 indexed citations
7.
Indalecio, Guillermo, Natalia Seoane, M. Aldegunde, K. Kálna, & Antonio J. García‐Loureiro. (2014). Scaling of metal gate workfunction variability in nanometer SOI-FinFETs. 105–108. 2 indexed citations
8.
Aldegunde, M., Steven Paul Hepplestone, Peter V. Sushko, & K. Kálna. (2014). Multi-scale simulations of a Mo/n+–GaAs Schottky contact for nano-scale III–V MOSFETs. Semiconductor Science and Technology. 29(5). 54003–54003. 4 indexed citations
9.
Aldegunde, M. & A. Martı́nez. (2013). Impact of the Aggressive Scaling on the Performance of FinFETs: the Role of a Single Dopant in the Channel. MRS Proceedings. 1551. 35–40. 1 indexed citations
10.
Aldegunde, M., Steven Paul Hepplestone, Peter V. Sushko, & K. Kálna. (2013). Multi-Scale Simulation of Transport via a Mo/n+-GaAs Schottky Contact. MRS Proceedings. 1553. 1 indexed citations
11.
Indalecio, Guillermo, Antonio J. García‐Loureiro, M. Aldegunde, & K. Kálna. (2013). Study of statistical variability in nanoscale transistors introduced by LER, RDF and MGG. 4. 95–98. 4 indexed citations
12.
Seoane, Natalia, et al.. (2013). Three-dimensional simulations of random dopant and metal-gate workfunction variability in an In0.53Ga0.47As GAA MOSFET. IEEE Electron Device Letters. 34(2). 205–207. 13 indexed citations
13.
14.
Martı́nez, A., M. Aldegunde, A. R. Brown, S. Roy, & Asen Asenov. (2011). NEGF simulations of a junctionless Si gate-all-around nanowire transistor with discrete dopants. Solid-State Electronics. 71. 101–105. 21 indexed citations
15.
Martı́nez, A., Natalia Seoane, M. Aldegunde, Asen Asenov, & John R. Barker. (2011). The Non-equilibrium Green function approach as a TCAD tool for future CMOS technology. 95–98. 1 indexed citations
16.
Aldegunde, M., et al.. (2011). Spin-polarized transport in a full magnetic pn tunnel junction. Applied Physics Letters. 98(19). 2 indexed citations
17.
García‐Loureiro, Antonio J., M. Aldegunde, Natalia Seoane, K. Kálna, & Asen Asenov. (2010). Impact of Random Dopant Fluctuations on a Tri-Gate MOSFET. ENLIGHTEN (Jurnal Bimbingan dan Konseling Islam). 1 indexed citations
18.
Aldegunde, M., et al.. (2009). Tunneling magnetoresistance dependence on the temperature in a ferromagnetic Zener diode. Journal of Physics Conference Series. 193. 12104–12104. 1 indexed citations
19.
Aldegunde, M., et al.. (2009). Numerical simulation of a ferromagnetic spin-polarised diode. 14. 160–163. 2 indexed citations
20.
Aldegunde, M., Antonio J. García‐Loureiro, A. Martı́nez, & K. Kálna. (2008). 3D Monte Carlo simulation of Tri-Gate MOSFETs using tetrahedral finite elements. 153–156. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

Breakdown of academic impact, for papers by Katsuya Oda Breakdown of academic impact, for papers by T. Manku Breakdown of academic impact, for papers by J.R. Watling Breakdown of academic impact, for papers by M. Togo Breakdown of academic impact, for papers by Eiji Yoshida Breakdown of academic impact, for papers by Cezar B. Zota Breakdown of academic impact, for papers by L. Ciampolini Breakdown of academic impact, for papers by Andy Stricker Breakdown of academic impact, for papers by F. Van de Wiele
Rankless by CCL
2026