Daniel Nagy

971 total citations
51 papers, 714 citations indexed

About

Daniel Nagy is a scholar working on Electrical and Electronic Engineering, Mechanical Engineering and Biomedical Engineering. According to data from OpenAlex, Daniel Nagy has authored 51 papers receiving a total of 714 indexed citations (citations by other indexed papers that have themselves been cited), including 36 papers in Electrical and Electronic Engineering, 10 papers in Mechanical Engineering and 10 papers in Biomedical Engineering. Recurrent topics in Daniel Nagy's work include Advancements in Semiconductor Devices and Circuit Design (30 papers), Semiconductor materials and devices (30 papers) and Silicon Carbide Semiconductor Technologies (15 papers). Daniel Nagy is often cited by papers focused on Advancements in Semiconductor Devices and Circuit Design (30 papers), Semiconductor materials and devices (30 papers) and Silicon Carbide Semiconductor Technologies (15 papers). Daniel Nagy collaborates with scholars based in United Kingdom, Spain and Egypt. Daniel Nagy's co-authors include Antonio J. García‐Loureiro, K. Kálna, Natalia Seoane, Guillermo Indalecio, Muhammad A. Elmessary, M. Aldegunde, Raimund Almbauer, Wulf G. Dettmer, D. Perić and Jari Lindberg and has published in prestigious journals such as SHILAP Revista de lepidopterología, IEEE Access and Journal of Physics Condensed Matter.

In The Last Decade

Daniel Nagy

47 papers receiving 666 citations

Peers

Daniel Nagy
D. Bača United States
Yiqun Li China
Jia Wei United States
W. Wondrak Germany
Lei Gu United States
Kyoung‐Sub Oh South Korea
D. Bača United States
Daniel Nagy
Citations per year, relative to Daniel Nagy Daniel Nagy (= 1×) peers D. Bača

Countries citing papers authored by Daniel Nagy

Since Specialization
Citations

This map shows the geographic impact of Daniel Nagy's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Daniel Nagy with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Daniel Nagy more than expected).

Fields of papers citing papers by Daniel Nagy

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Daniel Nagy. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Daniel Nagy. The network helps show where Daniel Nagy may publish in the future.

Co-authorship network of co-authors of Daniel Nagy

This figure shows the co-authorship network connecting the top 25 collaborators of Daniel Nagy. A scholar is included among the top collaborators of Daniel Nagy based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Daniel Nagy. Daniel Nagy is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Elmessary, Muhammad A., et al.. (2024). Scaling Challenges of Nanosheet Field-Effect Transistors Into Sub-2 nm Nodes. IEEE Journal of the Electron Devices Society. 12. 479–485. 6 indexed citations
2.
Medina-Bailón, Cristina, Tapas Dutta, Daniel Nagy, et al.. (2021). Simulation and Modeling of Novel Electronic Device Architectures with NESS (Nano-Electronic Simulation Software): A Modular Nano TCAD Simulation Framework. Micromachines. 12(6). 680–680. 11 indexed citations
3.
Ding, Jie, et al.. (2021). KMC-based POM flash cell optimization and time-dependent performance investigation. Semiconductor Science and Technology. 36(7). 75021–75021.
4.
Nagy, Daniel, et al.. (2020). Benchmarking of FinFET, Nanosheet, and Nanowire FET Architectures for Future Technology Nodes. IEEE Access. 8. 53196–53202. 97 indexed citations
5.
Medina-Bailón, Cristina, Tapas Dutta, Fikru Adamu-Lema, et al.. (2020). Nano-Electronic Simulation Software (NESS): A Novel Open-Source TCAD Simulation Environment. SHILAP Revista de lepidopterología. 3(4). 1–8. 6 indexed citations
6.
Nagy, Daniel, et al.. (2019). Hardware-In-The-Loop and Software-In-The-Loop Testing of the MOVE-II CubeSat. Aerospace. 6(12). 130–130. 30 indexed citations
7.
Nagy, Daniel, Guillermo Indalecio, Antonio J. García‐Loureiro, et al.. (2019). Drift-Diffusion Versus Monte Carlo Simulated ON-Current Variability in Nanowire FETs. IEEE Access. 7. 12790–12797. 6 indexed citations
8.
Seoane, Natalia, et al.. (2019). A Multi-Method Simulation Toolbox to Study Performance and Variability of Nanowire FETs. Materials. 12(15). 2391–2391. 21 indexed citations
9.
Nagy, Daniel, et al.. (2019). Impact of Gate Edge Roughness Variability on FinFET and Gate-All-Around Nanowire FET. IEEE Electron Device Letters. 40(4). 510–513. 33 indexed citations
10.
Skawran, Stephan, Christian Blüthgen, Matthias Eberhard, et al.. (2019). Dual-Energy Low-keV or Single-Energy Low-kV CT for Endoleak Detection?. Investigative Radiology. 55(1). 45–52. 15 indexed citations
11.
Nagy, Daniel, M. Aldegunde, Muhammad A. Elmessary, et al.. (2018). Modelling of nanoscale multi-gate transistors affected by atomistic interface roughness. Journal of Physics Condensed Matter. 30(14). 144006–144006. 1 indexed citations
12.
Nagy, Daniel, Guillermo Indalecio, Antonio J. García‐Loureiro, et al.. (2018). FinFET Versus Gate-All-Around Nanowire FET: Performance, Scaling, and Variability. IEEE Journal of the Electron Devices Society. 6. 332–340. 170 indexed citations
13.
Seoane, Natalia, Guillermo Indalecio, Daniel Nagy, K. Kálna, & Antonio J. García‐Loureiro. (2018). Impact of Cross-Sectional Shape on 10-nm Gate Length InGaAs FinFET Performance and Variability. IEEE Transactions on Electron Devices. 65(2). 456–462. 18 indexed citations
14.
Nagy, Daniel. (2018). 3-Channel Solar Array Simulator for CubeSat Power Budget Verification. mediaTUM – the media and publications repository of the Technical University Munich (Technical University Munich). 1 indexed citations
15.
Nagy, Daniel, Guillermo Indalecio, Antonio J. García‐Loureiro, et al.. (2017). Metal Grain Granularity Study on a Gate-All-Around Nanowire FET. IEEE Transactions on Electron Devices. 64(12). 5263–5269. 24 indexed citations
16.
Elmessary, Muhammad A., Daniel Nagy, M. Aldegunde, et al.. (2016). Anisotropic Quantum Corrections for 3-D Finite-Element Monte Carlo Simulations of Nanoscale Multigate Transistors. IEEE Transactions on Electron Devices. 63(3). 933–939. 17 indexed citations
17.
Nagy, Daniel, Muhammad A. Elmessary, M. Aldegunde, et al.. (2014). 3-D Finite Element Monte Carlo Simulations of Scaled Si SOI FinFET With Different Cross Sections. IEEE Transactions on Nanotechnology. 14(1). 93–100. 17 indexed citations
18.
Nagy, Daniel, et al.. (2011). User-centered design of data entry forms for semi-structured data. 237–242. 1 indexed citations
19.
Staudacher, Stephan, et al.. (2008). Gas Turbine Fault Diagnostics Using a Fusion of Least Squares Estimations and Fuzzy Logic Rules. 27–36. 5 indexed citations
20.
Almbauer, Raimund, et al.. (2006). DOMAIN DECOMPOSITION METHOD FOR 3-DIMENSIONAL SIMULATION OF THE PISTON CYLINDER SECTION OF A HERMETIC RECIPROCATING COMPRESSOR. Purdue e-Pubs (Purdue University System). 6 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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