L. W. Aukerman

671 total citations
22 papers, 527 citations indexed

About

L. W. Aukerman is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Radiation. According to data from OpenAlex, L. W. Aukerman has authored 22 papers receiving a total of 527 indexed citations (citations by other indexed papers that have themselves been cited), including 19 papers in Electrical and Electronic Engineering, 9 papers in Atomic and Molecular Physics, and Optics and 2 papers in Radiation. Recurrent topics in L. W. Aukerman's work include Advanced Semiconductor Detectors and Materials (10 papers), Silicon and Solar Cell Technologies (9 papers) and Semiconductor materials and interfaces (6 papers). L. W. Aukerman is often cited by papers focused on Advanced Semiconductor Detectors and Materials (10 papers), Silicon and Solar Cell Technologies (9 papers) and Semiconductor materials and interfaces (6 papers). L. W. Aukerman collaborates with scholars based in United States. L. W. Aukerman's co-authors include Ronald D. Graft, M. F. Millea, Robert K. Willardson, Philip W. Davis, M. McColl, Thomas C. Zietlow, F. L. Vernon, Yanrong Song, J. Z. Wilcox and C. E. Barnes and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Optics Letters.

In The Last Decade

L. W. Aukerman

21 papers receiving 426 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
L. W. Aukerman United States 13 455 259 101 53 40 22 527
I. Ladany United States 14 491 1.1× 341 1.3× 186 1.8× 55 1.0× 61 1.5× 50 606
G. Poiblaud France 10 364 0.8× 362 1.4× 117 1.2× 22 0.4× 91 2.3× 13 509
Bob Wilson 2 455 1.0× 455 1.8× 109 1.1× 22 0.4× 76 1.9× 4 570
A. M. Mazzone Italy 11 333 0.7× 211 0.8× 99 1.0× 141 2.7× 26 0.7× 77 472
W. K. Chu United States 10 310 0.7× 236 0.9× 96 1.0× 122 2.3× 107 2.7× 17 460
K. Masuda Japan 12 213 0.5× 183 0.7× 99 1.0× 80 1.5× 63 1.6× 46 354
Y. Takeishi Japan 10 421 0.9× 255 1.0× 111 1.1× 87 1.6× 26 0.7× 26 605
J. S. Park United States 7 336 0.7× 292 1.1× 159 1.6× 47 0.9× 23 0.6× 9 451
C. J. Miner Canada 15 496 1.1× 401 1.5× 140 1.4× 49 0.9× 56 1.4× 55 599
S. Isozumi Japan 12 282 0.6× 295 1.1× 61 0.6× 29 0.5× 34 0.8× 24 359

Countries citing papers authored by L. W. Aukerman

Since Specialization
Citations

This map shows the geographic impact of L. W. Aukerman's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by L. W. Aukerman with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites L. W. Aukerman more than expected).

Fields of papers citing papers by L. W. Aukerman

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by L. W. Aukerman. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by L. W. Aukerman. The network helps show where L. W. Aukerman may publish in the future.

Co-authorship network of co-authors of L. W. Aukerman

This figure shows the co-authorship network connecting the top 25 collaborators of L. W. Aukerman. A scholar is included among the top collaborators of L. W. Aukerman based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with L. W. Aukerman. L. W. Aukerman is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Aukerman, L. W., et al.. (1987). Applied Field and Total Dose Dependence of Trapped Charge Buildup in MOS Devices. IEEE Transactions on Nuclear Science. 34(6). 1196–1201. 66 indexed citations
2.
Zietlow, Thomas C., et al.. (1987). Correlation of Total Dose Damage in Capacitors and Transistors to 1.25 Micron Integrated Circuits. IEEE Transactions on Nuclear Science. 34(6). 1635–1640. 6 indexed citations
3.
Aukerman, L. W.. (1985). Amplitude Distribution of Cosmic Ray Events in Extrinsic IR Detectors. IEEE Transactions on Nuclear Science. 32(6). 4185–4188. 1 indexed citations
4.
Aukerman, L. W., F. L. Vernon, & Yanrong Song. (1984). Radiation Threshold Levels For Noise Degradation Of Photodiodes. Optical Engineering. 23(5). 5 indexed citations
5.
Aukerman, L. W., Yanrong Song, F. L. Vernon, G. A. Evans, & J. Z. Wilcox. (1982). <title>Radiation Effects On Semiconductor Optical Devices For Space Communications</title>. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 328. 56–65. 3 indexed citations
6.
Aukerman, L. W., et al.. (1977). Infrared hot carrier diode mixer. Optics Letters. 1(5). 178–178. 19 indexed citations
7.
Aukerman, L. W., et al.. (1975). Measuring low background levels by ac photoconductivity. Journal of Applied Physics. 46(2). 960–962. 1 indexed citations
8.
Aukerman, L. W. & M. F. Millea. (1974). The Response of Ge:Hg Photoconductors to Chopped and Scanned Illumination..
9.
Aukerman, L. W., M. F. Millea, & M. McColl. (1967). Diffusion Lengths of Electrons and Holes in GaAs. Journal of Applied Physics. 38(2). 685–690. 54 indexed citations
10.
Aukerman, L. W., M. F. Millea, & M. McColl. (1966). Effects of Radiation Damage on the Behavior of GaAs p-n Junctions. IEEE Transactions on Nuclear Science. 13(6). 174–180. 22 indexed citations
11.
Millea, M. F. & L. W. Aukerman. (1966). The 1.0- and 1.28-eV Emission from GaAs Diodes. Journal of Applied Physics. 37(4). 1788–1792. 15 indexed citations
12.
Aukerman, L. W. & M. F. Millea. (1965). Band-Filling Current in Heavily Doped GaAs Diodes. Journal of Applied Physics. 36(8). 2585–2586. 12 indexed citations
13.
Millea, M. F. & L. W. Aukerman. (1964). THE ROLE OF DIFFUSION CURRENT IN THE ELECTROLUMINESCENCE OF GaAs DIODES. Applied Physics Letters. 5(8). 168–169. 22 indexed citations
14.
Aukerman, L. W., et al.. (1963). Radiation Effects in GaAs. Journal of Applied Physics. 34(12). 3590–3599. 105 indexed citations
15.
Aukerman, L. W.. (1962). PROTON AND ELECTRON DAMAGE TO SOLAR CELLS. Defense Technical Information Center (DTIC). 1 indexed citations
16.
Aukerman, L. W. & Ronald D. Graft. (1962). Annealing of Electron-Irradiated GaAs. Physical Review. 127(5). 1576–1583. 71 indexed citations
17.
Aukerman, L. W. & Robert K. Willardson. (1960). High-Temperature Hall Coefficient in GaAs. Journal of Applied Physics. 31(5). 939–940. 58 indexed citations
18.
Aukerman, L. W.. (1959). Electron Irradiation of Indium Antimonide. Physical Review. 115(5). 1125–1132. 26 indexed citations
19.
Aukerman, L. W.. (1959). Electron Irradiation of Indium Arsenide. Physical Review. 115(5). 1133–1135. 6 indexed citations
20.
Aukerman, L. W.. (1959). Radiation-Produced Energy Levels in Compound Semiconductors. Journal of Applied Physics. 30(8). 1239–1243. 19 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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