Da-Cheng Lu

465 total citations
33 papers, 378 citations indexed

About

Da-Cheng Lu is a scholar working on Condensed Matter Physics, Atomic and Molecular Physics, and Optics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Da-Cheng Lu has authored 33 papers receiving a total of 378 indexed citations (citations by other indexed papers that have themselves been cited), including 25 papers in Condensed Matter Physics, 17 papers in Atomic and Molecular Physics, and Optics and 13 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Da-Cheng Lu's work include GaN-based semiconductor devices and materials (25 papers), Semiconductor Quantum Structures and Devices (17 papers) and Ga2O3 and related materials (13 papers). Da-Cheng Lu is often cited by papers focused on GaN-based semiconductor devices and materials (25 papers), Semiconductor Quantum Structures and Devices (17 papers) and Ga2O3 and related materials (13 papers). Da-Cheng Lu collaborates with scholars based in China and United States. Da-Cheng Lu's co-authors include Xianglin Liu, Zhanguo Wang, Xiaohui Wang, Peide Han, Lianshan Wang, Konstantinos P. Giapis, Klavs F. Jensen, Du Wang, Yuan Lü and Du Wang and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of Crystal Growth.

In The Last Decade

Da-Cheng Lu

32 papers receiving 359 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Da-Cheng Lu China 11 276 162 161 142 122 33 378
Tetsuya Taki Japan 7 320 1.2× 168 1.0× 136 0.8× 150 1.1× 166 1.4× 13 408
R. J. Gorman United States 9 331 1.2× 211 1.3× 140 0.9× 189 1.3× 94 0.8× 19 389
O. H. Nam South Korea 10 337 1.2× 170 1.0× 203 1.3× 111 0.8× 142 1.2× 15 425
B. Schöttker Germany 10 420 1.5× 211 1.3× 160 1.0× 184 1.3× 209 1.7× 22 478
Akihiko Ishibashi Japan 12 262 0.9× 172 1.1× 112 0.7× 132 0.9× 133 1.1× 28 339
S.K. Mathis United States 7 219 0.8× 127 0.8× 233 1.4× 72 0.5× 162 1.3× 12 375
V. G. Mansurov Russia 9 277 1.0× 194 1.2× 132 0.8× 144 1.0× 119 1.0× 81 401
I. Berishev United States 10 281 1.0× 161 1.0× 238 1.5× 137 1.0× 122 1.0× 36 448
Ł. Macht Netherlands 13 377 1.4× 203 1.3× 202 1.3× 197 1.4× 68 0.6× 23 434
S. Kaiser Germany 11 186 0.7× 190 1.2× 232 1.4× 86 0.6× 172 1.4× 18 396

Countries citing papers authored by Da-Cheng Lu

Since Specialization
Citations

This map shows the geographic impact of Da-Cheng Lu's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Da-Cheng Lu with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Da-Cheng Lu more than expected).

Fields of papers citing papers by Da-Cheng Lu

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Da-Cheng Lu. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Da-Cheng Lu. The network helps show where Da-Cheng Lu may publish in the future.

Co-authorship network of co-authors of Da-Cheng Lu

This figure shows the co-authorship network connecting the top 25 collaborators of Da-Cheng Lu. A scholar is included among the top collaborators of Da-Cheng Lu based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Da-Cheng Lu. Da-Cheng Lu is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
2.
Lü, Yuan, Guangwei Cong, Xianglin Liu, et al.. (2004). Growth of crack-free GaN films on Si(111) substrate by using Al-rich AlN buffer layer. Journal of Applied Physics. 96(9). 4982–4988. 9 indexed citations
3.
Lü, Yuan, Xianglin Liu, Xiaohui Wang, et al.. (2003). Influence of the growth temperature of the high-temperature AlN buffer on the properties of GaN grown on Si(111) substrate. Journal of Crystal Growth. 263(1-4). 4–11. 35 indexed citations
4.
Lu, Da-Cheng, Xianglin Liu, Zhen Chen, et al.. (2002). Statistical investigation on morphology development of gallium nitride in initial growth stage. Journal of Crystal Growth. 234(1). 77–84. 6 indexed citations
5.
Chen, Zhen, Da-Cheng Lu, Xiaohui Wang, et al.. (2002). The mechanism of blueshift in excitation-intensity-dependent photoluminescence spectrum of nitride multiple quantum wells. Journal of Luminescence. 99(1). 35–38. 6 indexed citations
6.
Chen, Zhen, Da-Cheng Lu, Xianglin Liu, et al.. (2002). Nitrogen vacancy scattering in GaN grown by metal–organic vapor phase epitaxy. Solid-State Electronics. 46(12). 2069–2074. 3 indexed citations
7.
Lu, Da-Cheng, et al.. (2000). Quasi-thermodynamic analysis of MOVPE of AlGaN. Journal of Crystal Growth. 208(1-4). 73–78. 12 indexed citations
8.
Han, Peide, et al.. (1998). Growth and characterization of GaN on LiGaO2. Journal of Crystal Growth. 195(1-4). 304–308. 18 indexed citations
9.
Wang, Lianshan, Xianglin Liu, Du Wang, et al.. (1998). The growth and characterization of GaN grown on an Al2O3 coated (001) Si substrate by metalorganic vapor phase epitaxy. Journal of Crystal Growth. 193(4). 484–490. 1 indexed citations
10.
Wang, Lianshan, Xianglin Liu, Jun Wang, et al.. (1998). Wurtzite GaN epitaxial growth on a Si(001) substrate using γ-Al2O3 as an intermediate layer. Applied Physics Letters. 72(1). 109–111. 67 indexed citations
11.
Wang, Yutian, et al.. (1998). MOVPE growth of GaN and LED on (1 1 1) MgAl2O4. Journal of Crystal Growth. 189-190. 197–201. 2 indexed citations
12.
Liu, Xianglin, Lianshan Wang, Da-Cheng Lu, et al.. (1998). The influence of thickness on properties of GaN buffer layer and heavily Si-doped GaN grown by metalorganic vapor-phase epitaxy. Journal of Crystal Growth. 189-190. 287–290. 17 indexed citations
13.
Liu, Xianglin, Da-Cheng Lu, Lianshan Wang, et al.. (1998). The dependence of growth rate of GaN buffer layer on growth parameters by metalorganic vapor-phase epitaxy. Journal of Crystal Growth. 193(1-2). 23–27. 8 indexed citations
14.
Lu, Da-Cheng, et al.. (1997). Quasi-Thermodynamic Analysis of Metalorganic Vapor Phase Epitaxy of GaN. MRS Proceedings. 468. 2 indexed citations
15.
Wang, Yutian, et al.. (1997). Mosaic Structure and Cathodoluminescence of GaN Epilayer Grown by LP-MOVPE. MRS Proceedings. 468. 1 indexed citations
16.
Lu, Da-Cheng, et al.. (1997). Phase diagrams for the MOVPE growth of ZnTe and ZnSeTe. Journal of Crystal Growth. 170(1-4). 514–517. 5 indexed citations
17.
Dong, Jianrong, Zhanguo Wang, Da-Cheng Lu, et al.. (1996). Ordering along 〈111〉 and 〈100〉 directions in GaInP demonstrated by photoluminescence under hydrostatic pressure. Applied Physics Letters. 68(12). 1711–1713. 7 indexed citations
18.
Dong, Jianrong, Zhanguo Wang, Xianglin Liu, et al.. (1995). Photoluminescence of ordered Ga0.5In0.5P grown by metalorganic vapor phase epitaxy. Applied Physics Letters. 67(11). 1573–1575. 10 indexed citations
19.
Giapis, Konstantinos P., Da-Cheng Lu, Dimitrios I. Fotiadis, & Klavs F. Jensen. (1990). A new reactor system for MOCVD of ZaSe: Modelling and experimental results for growth from dimethylzinc and diethylselenide. Journal of Crystal Growth. 104(3). 629–640. 8 indexed citations
20.
Giapis, Konstantinos P., Da-Cheng Lu, & Klavs F. Jensen. (1989). High quality epitaxial ZnSe and the relationship between electron mobility and photoluminescence characteristics. Applied Physics Letters. 54(4). 353–355. 35 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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