V. Grivickas

1.5k total citations
88 papers, 1.3k citations indexed

About

V. Grivickas is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, V. Grivickas has authored 88 papers receiving a total of 1.3k indexed citations (citations by other indexed papers that have themselves been cited), including 70 papers in Electrical and Electronic Engineering, 52 papers in Materials Chemistry and 21 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in V. Grivickas's work include Silicon Carbide Semiconductor Technologies (34 papers), Thin-Film Transistor Technologies (26 papers) and Semiconductor materials and devices (26 papers). V. Grivickas is often cited by papers focused on Silicon Carbide Semiconductor Technologies (34 papers), Thin-Film Transistor Technologies (26 papers) and Semiconductor materials and devices (26 papers). V. Grivickas collaborates with scholars based in Lithuania, Sweden and United States. V. Grivickas's co-authors include Jan Linnros, Augustinas Galeckas, Nenad Lalic, Paulius Grivickas, C. Hallin, U. Lindefelt, P. Basmaji, Patrik Ščajev, Jens Aage Tellefsen and A.V. Mazanik and has published in prestigious journals such as Physical Review Letters, Physical review. B, Condensed matter and Applied Physics Letters.

In The Last Decade

V. Grivickas

86 papers receiving 1.3k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
V. Grivickas Lithuania 18 950 711 324 303 184 88 1.3k
M. Kaiser Netherlands 14 752 0.8× 690 1.0× 356 1.1× 244 0.8× 110 0.6× 49 1.2k
Brenda L. VanMil United States 18 915 1.0× 834 1.2× 238 0.7× 358 1.2× 209 1.1× 62 1.4k
Tan Fu Lei Taiwan 18 1.3k 1.4× 458 0.6× 168 0.5× 318 1.0× 160 0.9× 178 1.4k
Lars F. Voss United States 16 767 0.8× 477 0.7× 173 0.5× 157 0.5× 181 1.0× 112 1.1k
Christophe Raynaud France 16 1.1k 1.2× 314 0.4× 115 0.4× 289 1.0× 126 0.7× 80 1.3k
Yimen Zhang China 17 1.3k 1.3× 476 0.7× 114 0.4× 410 1.4× 379 2.1× 258 1.6k
H.‐H. Tseng United States 22 1.6k 1.7× 442 0.6× 195 0.6× 431 1.4× 113 0.6× 58 1.7k
M. Ghezzo United States 20 1.3k 1.4× 212 0.3× 89 0.3× 349 1.2× 147 0.8× 73 1.4k
Osamu Ishii Japan 15 520 0.5× 251 0.4× 134 0.4× 429 1.4× 245 1.3× 105 929
Zhaohui Wu China 13 452 0.5× 450 0.6× 308 1.0× 147 0.5× 139 0.8× 63 709

Countries citing papers authored by V. Grivickas

Since Specialization
Citations

This map shows the geographic impact of V. Grivickas's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by V. Grivickas with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites V. Grivickas more than expected).

Fields of papers citing papers by V. Grivickas

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by V. Grivickas. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by V. Grivickas. The network helps show where V. Grivickas may publish in the future.

Co-authorship network of co-authors of V. Grivickas

This figure shows the co-authorship network connecting the top 25 collaborators of V. Grivickas. A scholar is included among the top collaborators of V. Grivickas based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with V. Grivickas. V. Grivickas is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Grivickas, V., Patrik Ščajev, S. Miasojedovas, Lars F. Voss, & Paulius Grivickas. (2025). Self-Trapped-Exciton Radiative Recombination in β–Ga2O3: Impact of Two Concurrent Nonradiative Auger Processes. ACS Applied Electronic Materials. 7(5). 1829–1841. 2 indexed citations
2.
Grivickas, V., Patrik Ščajev, Kristijonas Genevičius, Lars F. Voss, & Paulius Grivickas. (2025). Bipolar transport in diamond under photo-excitation: Evidence of free charge scattering by excitons. Diamond and Related Materials. 158. 112588–112588.
3.
Sampayan, S., Paulius Grivickas, Adam Conway, et al.. (2021). Characterization of carrier behavior in photonically excited 6H silicon carbide exhibiting fast, high voltage, bulk transconductance properties. Scientific Reports. 11(1). 6859–6859. 12 indexed citations
4.
Grivickas, Paulius, Patrik Ščajev, N.M. Kazuchits, et al.. (2020). Carrier recombination parameters in diamond after surface boron implantation and annealing. Journal of Applied Physics. 127(24). 5 indexed citations
5.
Grivickas, Paulius, Patrik Ščajev, N.M. Kazuchits, et al.. (2020). Carrier recombination and diffusion in high-purity diamond after electron irradiation and annealing. Applied Physics Letters. 117(24). 8 indexed citations
6.
Grivickas, Paulius, Adam Conway, Lars F. Voss, et al.. (2019). Intrinsic shape of free carrier absorption spectra in 4H-SiC. Journal of Applied Physics. 125(22). 5 indexed citations
7.
Grivickas, V., et al.. (2018). Carrier dynamics in highly excited TlInS2: evidence of 2D electron–hole charge separation at parallel layers. Physical Chemistry Chemical Physics. 21(4). 2102–2114. 7 indexed citations
8.
Grivickas, V., et al.. (2014). Room‐temperature photoluminescence in quasi‐2D TlGaSe2 and TlInS2semiconductors. physica status solidi (RRL) - Rapid Research Letters. 8(7). 639–642. 8 indexed citations
9.
Fedotov, А.К., I. Svito, Tomasz N. Kołtunowicz, et al.. (2012). Electrical properties of the layered single crystals TlGaSe2 and TlInS2. PRZEGLĄD ELEKTROTECHNICZNY. 301–304. 1 indexed citations
10.
Grivickas, V., et al.. (2009). Excess carrier recombination lifetime of bulk n-type 3C-SiC. Applied Physics Letters. 95(24). 16 indexed citations
11.
Grivickas, V., et al.. (2008). Two-photon indirect absorption in GaSe. Journal of Physics Conference Series. 100(4). 42008–42008. 2 indexed citations
12.
Grivickas, V., et al.. (2006). Photoacoustic Pulse Generation in TlGaSe2 Layered Crystals. 1 indexed citations
13.
Grivickas, V., et al.. (2006). Indirect absorption edge of TlGaSe2 crystals. physica status solidi (b). 243(5). 45 indexed citations
14.
Grivickas, Paulius, V. Grivickas, & Jan Linnros. (2003). Excitonic Absorption above the Mott Transition in Si. Physical Review Letters. 91(24). 246401–246401. 10 indexed citations
15.
Galeckas, Augustinas, et al.. (2002). Temperature Dependence of the Absorption Coefficient in 4H- and 6H-Silicon Carbide at 355 nm Laser Pumping Wavelength. physica status solidi (a). 191(2). 613–620. 33 indexed citations
16.
Grivickas, V. & Jan Linnros. (1995). Free-carrier absorption and luminescence decay of porous silicon. Thin Solid Films. 255(1-2). 70–73. 7 indexed citations
17.
Grivickas, V. & P. Basmaji. (1993). Optical absorption in porous silicon of high porosity. Thin Solid Films. 235(1-2). 234–238. 20 indexed citations
18.
Matvienko, Bohdan, et al.. (1993). Ion Exchange Effects in Porous Silicon. MRS Proceedings. 298.
19.
Grivickas, V. & Jan Linnros. (1991). New contactless method for carrier diffusion measurements in silicon with a high precision. Applied Physics Letters. 59(1). 72–74. 11 indexed citations
20.
Grivickas, V., et al.. (1973). The influence of mobility on photoconductivity in cdsesingle crystals at high excitation density. physica status solidi (a). 19(2). K115–K119. 7 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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