Johannes Svensson

2.2k total citations
72 papers, 1.7k citations indexed

About

Johannes Svensson is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering and Materials Chemistry. According to data from OpenAlex, Johannes Svensson has authored 72 papers receiving a total of 1.7k indexed citations (citations by other indexed papers that have themselves been cited), including 58 papers in Electrical and Electronic Engineering, 47 papers in Biomedical Engineering and 20 papers in Materials Chemistry. Recurrent topics in Johannes Svensson's work include Semiconductor materials and devices (49 papers), Advancements in Semiconductor Devices and Circuit Design (47 papers) and Nanowire Synthesis and Applications (44 papers). Johannes Svensson is often cited by papers focused on Semiconductor materials and devices (49 papers), Advancements in Semiconductor Devices and Circuit Design (47 papers) and Nanowire Synthesis and Applications (44 papers). Johannes Svensson collaborates with scholars based in Sweden, United Kingdom and Russia. Johannes Svensson's co-authors include Lars‐Erik Wernersson, Erik Lind, E. E. B. Campbell, Elvedin Memišević, Markus Hellenbrand, Mattias Borg, Anil W. Dey, Nicklas Anttu, Neimantas Vainorius and Martin Ek and has published in prestigious journals such as Nano Letters, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Johannes Svensson

69 papers receiving 1.7k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Johannes Svensson Sweden 23 1.3k 872 538 409 74 72 1.7k
N. Pauc France 22 1.3k 1.0× 650 0.7× 433 0.8× 623 1.5× 51 0.7× 87 1.6k
M. A. Lourenço United Kingdom 20 1.3k 1.0× 443 0.5× 915 1.7× 767 1.9× 42 0.6× 86 1.6k
C. Summonte Italy 21 1.2k 0.9× 332 0.4× 838 1.6× 368 0.9× 78 1.1× 110 1.4k
B. Krauss Germany 9 846 0.6× 459 0.5× 1.7k 3.1× 650 1.6× 47 0.6× 9 1.9k
Filippo Pizzocchero Denmark 11 879 0.7× 399 0.5× 1.8k 3.3× 360 0.9× 38 0.5× 14 2.0k
Lene Gammelgaard Denmark 16 493 0.4× 358 0.4× 947 1.8× 450 1.1× 24 0.3× 31 1.2k
Aleksandra Krajewska Poland 20 924 0.7× 341 0.4× 631 1.2× 750 1.8× 42 0.6× 60 1.4k
Vaidotas Mišeikis Italy 19 607 0.5× 472 0.5× 914 1.7× 400 1.0× 20 0.3× 65 1.3k
Charles W. Teplin United States 22 1.1k 0.8× 237 0.3× 919 1.7× 275 0.7× 154 2.1× 72 1.4k
Anthony K. Boyd United States 13 665 0.5× 399 0.5× 853 1.6× 240 0.6× 56 0.8× 23 1.2k

Countries citing papers authored by Johannes Svensson

Since Specialization
Citations

This map shows the geographic impact of Johannes Svensson's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Johannes Svensson with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Johannes Svensson more than expected).

Fields of papers citing papers by Johannes Svensson

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Johannes Svensson. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Johannes Svensson. The network helps show where Johannes Svensson may publish in the future.

Co-authorship network of co-authors of Johannes Svensson

This figure shows the co-authorship network connecting the top 25 collaborators of Johannes Svensson. A scholar is included among the top collaborators of Johannes Svensson based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Johannes Svensson. Johannes Svensson is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Svensson, Johannes, et al.. (2025). Scalable Vertical In–Ga–As Nanowire MOSFET With 67 mV/dec at 126μm Gate Width. IEEE Electron Device Letters. 46(4). 560–563.
2.
3.
Svensson, Johannes, et al.. (2023). Three-Dimensional Integration of InAs Nanowires by Template-Assisted Selective Epitaxy on Tungsten. Nano Letters. 23(11). 4756–4761. 4 indexed citations
4.
Ram, Mamidala Saketh, Johannes Svensson, & Lars‐Erik Wernersson. (2023). Effects of Interface Oxidation on Noise Properties and Performance in III–V Vertical Nanowire Memristors. ACS Applied Materials & Interfaces. 15(15). 19085–19091. 2 indexed citations
5.
Ram, Mamidala Saketh, et al.. (2022). Low-Frequency Noise in Vertical InAs/InGaAs Gate-All-Around MOSFETs at 15 K for Cryogenic Applications. IEEE Electron Device Letters. 43(12). 2033–2036. 10 indexed citations
6.
Svensson, Johannes, et al.. (2021). Increased Breakdown Voltage in Vertical Heterostructure III-V Nanowire MOSFETs With a Field Plate. IEEE Electron Device Letters. 42(11). 1596–1598. 8 indexed citations
7.
Zhu, Zhongyunshen, et al.. (2021). Performance enhancement of GaSb vertical nanowire p-type MOSFETs on Si by rapid thermal annealing. Nanotechnology. 33(7). 75202–75202. 6 indexed citations
8.
Persson, Anton E. O., et al.. (2020). A method for estimating defects in ferroelectric thin film MOSCAPs. Applied Physics Letters. 117(24). 15 indexed citations
9.
Persson, Anton E. O., et al.. (2020). Reduced annealing temperature for ferroelectric HZO on InAs with enhanced polarization. Applied Physics Letters. 116(6). 33 indexed citations
10.
Hellenbrand, Markus, et al.. (2020). Vertical nanowire III–V MOSFETs with improved high‐frequency gain. Electronics Letters. 56(13). 669–671. 15 indexed citations
11.
Svensson, Johannes, et al.. (2020). Feature size control using surface reconstruction temperature in block copolymer lithography for InAs nanowire growth. Nanotechnology. 31(32). 325303–325303. 5 indexed citations
12.
Svensson, Johannes, Elvedin Memišević, Zhongyunshen Zhu, et al.. (2020). Tuning of Source Material for InAs/InGaAsSb/GaSb Application-Specific Vertical Nanowire Tunnel FETs. ACS Applied Electronic Materials. 2(9). 2882–2887. 20 indexed citations
13.
Wu, Jun, et al.. (2017). Vertical heterojunction InAs/InGaAs nanowire MOSFETs on Si with I<inf>on</inf> = 330 μA/μm at I<inf>off</inf> = 100 nA/μm and V<inf>D</inf> = 0.5 V. Lund University Publications (Lund University). T36–T37. 7 indexed citations
14.
Memišević, Elvedin, et al.. (2016). Vertical InAs/GaAsSb/GaSb tunneling field-effect transistor on Si with S = 48 mV/decade and Ion = 10 .MU.A/.MU.m for Ioff = 1 nA/.MU.m at Vds = 0.3 V. IEEE Conference Proceedings. 2016. 4. 9 indexed citations
15.
Persson, Karl‐Magnus, Martin Berg, Jun Wu, et al.. (2013). Extrinsic and Intrinsic Performance of Vertical InAs Nanowire MOSFETs on Si Substrates. IEEE Transactions on Electron Devices. 60(9). 2761–2767. 47 indexed citations
16.
Svensson, Johannes & E. E. B. Campbell. (2011). Schottky barriers in carbon nanotube-metal contacts. Journal of Applied Physics. 110(11). 130 indexed citations
17.
Svensson, Johannes, Yury Tarakanov, Dong Su Lee, et al.. (2009). The dependence of the Schottky barrier height on carbon nanotube diameter for Pd–carbon nanotube contacts. Nanotechnology. 20(17). 175204–175204. 38 indexed citations
18.
Svensson, Johannes, et al.. (2008). A carbon nanotube gated carbon nanotube transistor with 5 ps gate delay. Nanotechnology. 19(32). 325201–325201. 13 indexed citations
19.
Lee, Dong Su, Johannes Svensson, Sang Wook Lee, Yung Woo Park, & E. E. B. Campbell. (2006). Fabrication of Crossed Junctions of Semiconducting and Metallic Carbon Nanotubes: A CNT-Gated CNT-FET. Journal of Nanoscience and Nanotechnology. 6(5). 1325–1330. 20 indexed citations
20.
Svensson, Johannes, et al.. (2004). Electric field aligned growth of single-walled carbon nanotubes. Current Applied Physics. 4(6). 595–598. 22 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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