Hidejiro Miki

582 total citations
29 papers, 471 citations indexed

About

Hidejiro Miki is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, Hidejiro Miki has authored 29 papers receiving a total of 471 indexed citations (citations by other indexed papers that have themselves been cited), including 20 papers in Electrical and Electronic Engineering, 15 papers in Atomic and Molecular Physics, and Optics and 10 papers in Materials Chemistry. Recurrent topics in Hidejiro Miki's work include Semiconductor Quantum Structures and Devices (14 papers), Semiconductor materials and interfaces (5 papers) and Thin-Film Transistor Technologies (5 papers). Hidejiro Miki is often cited by papers focused on Semiconductor Quantum Structures and Devices (14 papers), Semiconductor materials and interfaces (5 papers) and Thin-Film Transistor Technologies (5 papers). Hidejiro Miki collaborates with scholars based in Japan, United States and United Kingdom. Hidejiro Miki's co-authors include M. Otsubo, K. Segawa, Tomoji Kawai, Hitoshi Tabata, Shichio Kawai, H. Kumabe, Kazuhiro Kobayashi, S. Kawamoto, S. Mitsui and Shigeru Imai and has published in prestigious journals such as Journal of Applied Physics, Journal of The Electrochemical Society and Applied Surface Science.

In The Last Decade

Hidejiro Miki

29 papers receiving 442 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Hidejiro Miki Japan 11 329 254 179 84 40 29 471
Susumu Ninomiya Japan 6 319 1.0× 343 1.4× 135 0.8× 63 0.8× 38 0.9× 7 474
P. A. Psaras United States 12 352 1.1× 231 0.9× 260 1.5× 74 0.9× 22 0.6× 26 537
Akira Ohsawa Japan 15 538 1.6× 204 0.8× 240 1.3× 133 1.6× 42 1.1× 41 716
T. Hariu Japan 14 386 1.2× 269 1.1× 248 1.4× 149 1.8× 107 2.7× 63 563
Hirofumi Fukumoto Japan 10 255 0.8× 315 1.2× 70 0.4× 105 1.3× 60 1.5× 19 418
L. G. Meiners United States 15 568 1.7× 199 0.8× 392 2.2× 53 0.6× 51 1.3× 27 623
T. Kanata Japan 12 378 1.1× 311 1.2× 311 1.7× 67 0.8× 48 1.2× 20 599
J. C. Grenet France 11 195 0.6× 183 0.7× 164 0.9× 120 1.4× 117 2.9× 31 386
S. V. Gastev Russia 10 236 0.7× 221 0.9× 161 0.9× 63 0.8× 26 0.7× 42 381
Masayasu Nishizawa Japan 10 381 1.2× 199 0.8× 184 1.0× 37 0.4× 24 0.6× 30 467

Countries citing papers authored by Hidejiro Miki

Since Specialization
Citations

This map shows the geographic impact of Hidejiro Miki's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Hidejiro Miki with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Hidejiro Miki more than expected).

Fields of papers citing papers by Hidejiro Miki

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Hidejiro Miki. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Hidejiro Miki. The network helps show where Hidejiro Miki may publish in the future.

Co-authorship network of co-authors of Hidejiro Miki

This figure shows the co-authorship network connecting the top 25 collaborators of Hidejiro Miki. A scholar is included among the top collaborators of Hidejiro Miki based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Hidejiro Miki. Hidejiro Miki is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Hanamoto, Katsumi, H. Suzuki, Muneo Sasaki, et al.. (1999). Low-Resistivity Highly Transparent Indium-Tin-Oxide Thin Films Prepared at Room Temperature by Synchrotron Radiation Ablation. Japanese Journal of Applied Physics. 38(12R). 6846–6846. 8 indexed citations
2.
Suzuki, H., et al.. (1999). Deposition of Polyethylene Thin Films Using Synchrotron Radiation Ablation. Japanese Journal of Applied Physics. 38(2R). 863–863. 8 indexed citations
3.
Imai, Shigeru, et al.. (1998). Atomic-layer chemical-vapor-deposition of silicon dioxide films with an extremely low hydrogen content. Applied Surface Science. 130-132. 202–207. 12 indexed citations
4.
Miki, Hidejiro, et al.. (1994). Control of electrical conductivity in laser deposited SrTiO3 thin films with Nb doping. Journal of Applied Physics. 76(10). 5886–5890. 149 indexed citations
5.
Miki, Hidejiro, et al.. (1991). The Field Effect Mobility and the Current-Voltage Characteristics of Amorphous-Silicon Thin-Film Transistors. Japanese Journal of Applied Physics. 30(11R). 2740–2740. 2 indexed citations
6.
Kobayashi, Kazuhiro, et al.. (1987). Characteristics of a-Si:H films deposited by electron cyclotron resonance plasma CVD. Journal of Non-Crystalline Solids. 97-98. 273–276. 6 indexed citations
7.
8.
Inoue, Yasuo, et al.. (1986). Direct Writing of Silicon Lines by Pyrolytic Argon Laser CVD. Japanese Journal of Applied Physics. 25(12R). 1830–1830. 5 indexed citations
9.
Miki, Hidejiro, et al.. (1985). Dark current of hydrogenated amorphous silicon photo-diode. Journal of Non-Crystalline Solids. 77-78. 1417–1420. 1 indexed citations
10.
Miki, Hidejiro, et al.. (1978). The Ga–In–Sb Ternary Phase Diagram at Low Growth Temperature. Japanese Journal of Applied Physics. 17(12). 2079–2084. 9 indexed citations
11.
Segawa, K., et al.. (1977). GaxIn1-xSb Gunn Diodes. Japanese Journal of Applied Physics. 16(S1). 103–103. 3 indexed citations
12.
Otsubo, M., et al.. (1977). The Effect of Substrate Preparations on the Surface Morphologies of the Epitaxial Layers of GaAs. Journal of The Electrochemical Society. 124(12). 1907–1912. 3 indexed citations
13.
Otsubo, M., et al.. (1976). ChemInform Abstract: PREFERENTIAL ETCHING OF GALLIUM ARSENIDE THROUGH PHOTORESIST MASKS. Chemischer Informationsdienst. 7(32). 1 indexed citations
14.
Otsubo, M., et al.. (1976). Preferential Etching of GaAs Through Photoresist Masks. Journal of The Electrochemical Society. 123(5). 676–680. 42 indexed citations
15.
Otsubo, M., et al.. (1975). Degradation of Gallium Arsenide Crystals by the Cold-Working Treatment (Abrasion). Japanese Journal of Applied Physics. 14(6). 849–854. 26 indexed citations
16.
Otsubo, M. & Hidejiro Miki. (1974). Chromium-Doped Semi-Insulating Gallium Arsenide Crystals Grown by Liquid Phase Epitaxy. Japanese Journal of Applied Physics. 13(10). 1655–1656. 5 indexed citations
17.
Miki, Hidejiro, et al.. (1974). Undopedn-Type GaSb Grown by Liquid Phase Epitaxy. Japanese Journal of Applied Physics. 13(1). 203–204. 31 indexed citations
18.
Otsubo, M., K. Segawa, & Hidejiro Miki. (1973). The Influence of Oxygen on the Properties of GaAs Grown by Liquid Phase Epitaxy. Japanese Journal of Applied Physics. 12(6). 797–803. 18 indexed citations
19.
Miki, Hidejiro, et al.. (1972). Silicon Contamination in Vapor-Grown Gallium Arsenide. Japanese Journal of Applied Physics. 11(5). 623–627. 1 indexed citations
20.
Miki, Hidejiro & M. Otsubo. (1971). High Purity GaAs Crystals Grown by Liquid Phase Epitaxy. Japanese Journal of Applied Physics. 10(6). 820C–820C. 8 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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