L. C. Le

430 total citations
22 papers, 368 citations indexed

About

L. C. Le is a scholar working on Condensed Matter Physics, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, L. C. Le has authored 22 papers receiving a total of 368 indexed citations (citations by other indexed papers that have themselves been cited), including 22 papers in Condensed Matter Physics, 13 papers in Atomic and Molecular Physics, and Optics and 8 papers in Materials Chemistry. Recurrent topics in L. C. Le's work include GaN-based semiconductor devices and materials (22 papers), Semiconductor Quantum Structures and Devices (13 papers) and ZnO doping and properties (8 papers). L. C. Le is often cited by papers focused on GaN-based semiconductor devices and materials (22 papers), Semiconductor Quantum Structures and Devices (13 papers) and ZnO doping and properties (8 papers). L. C. Le collaborates with scholars based in China. L. C. Le's co-authors include Desheng Jiang, J.J. Zhu, Degang Zhao, Ping Chen, Jing Yang, Hui Yang, Ziyu Liu, Z.S. Liu, Desheng Zhao and Jia-Ji Zhu and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Optics Express.

In The Last Decade

L. C. Le

22 papers receiving 346 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
L. C. Le China 12 349 181 137 134 115 22 368
Felix Nippert Germany 11 352 1.0× 173 1.0× 152 1.1× 184 1.4× 175 1.5× 28 433
Akira Honshio Japan 10 305 0.9× 141 0.8× 127 0.9× 131 1.0× 90 0.8× 15 351
P. Drechsel Germany 9 366 1.0× 137 0.8× 140 1.0× 176 1.3× 156 1.4× 14 387
Kazuyoshi Iida Japan 11 369 1.1× 199 1.1× 182 1.3× 105 0.8× 80 0.7× 24 400
David A. Browne United States 9 314 0.9× 143 0.8× 112 0.8× 125 0.9× 155 1.3× 12 347
Y. Dikme Germany 12 383 1.1× 170 0.9× 146 1.1× 142 1.1× 200 1.7× 44 431
P. Wolny Poland 11 334 1.0× 123 0.7× 114 0.8× 198 1.5× 164 1.4× 39 388
Hongbo Yu Türkiye 14 360 1.0× 233 1.3× 195 1.4× 113 0.8× 141 1.2× 29 423
J.C. Ke Taiwan 7 361 1.0× 127 0.7× 239 1.7× 138 1.0× 138 1.2× 9 404

Countries citing papers authored by L. C. Le

Since Specialization
Citations

This map shows the geographic impact of L. C. Le's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by L. C. Le with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites L. C. Le more than expected).

Fields of papers citing papers by L. C. Le

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by L. C. Le. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by L. C. Le. The network helps show where L. C. Le may publish in the future.

Co-authorship network of co-authors of L. C. Le

This figure shows the co-authorship network connecting the top 25 collaborators of L. C. Le. A scholar is included among the top collaborators of L. C. Le based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with L. C. Le. L. C. Le is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Yang, Jing, Degang Zhao, Desheng Jiang, et al.. (2016). Investigation on the performance and efficiency droop behaviors of InGaN/GaN multiple quantum well green LEDs with various GaN cap layer thicknesses. Vacuum. 129. 99–104. 6 indexed citations
2.
Chen, Ping, Degang Zhao, Desheng Jiang, et al.. (2016). The thickness design of unintentionally doped GaN interlayer matched with background doping level for InGaN-based laser diodes. AIP Advances. 6(3). 5 indexed citations
3.
Liang, Feng, Ping Chen, Duo Zhao, et al.. (2016). XPS study of impurities in Si‐doped AlN film. Surface and Interface Analysis. 48(12). 1305–1309. 7 indexed citations
4.
Liu, Zongshun, Degang Zhao, Desheng Jiang, et al.. (2015). Differential resistance of GaN-based laser diodes with and without polarization effect. Applied Optics. 54(29). 8706–8706. 7 indexed citations
5.
Chen, Ping, Degang Zhao, Desheng Jiang, et al.. (2015). The effect of composite GaN/InGaN last barrier layer on electron leakage current and modal gain of InGaN‐based multiple quantum well laser diodes. physica status solidi (a). 212(12). 2936–2943. 7 indexed citations
6.
Yang, Jing, Degang Zhao, Desheng Jiang, et al.. (2015). Optical and structural characteristics of high indium content InGaN/GaN multi-quantum wells with varying GaN cap layer thickness. Journal of Applied Physics. 117(5). 27 indexed citations
7.
Zhao, Desheng, Desheng Jiang, Ping Chen, et al.. (2015). GaN high electron mobility transistors with AlInN back barriers. Journal of Alloys and Compounds. 662. 16–19. 26 indexed citations
8.
Yang, Jing, Degang Zhao, Desheng Jiang, et al.. (2014). Investigation on the compensation effect of residual carbon impurities in low temperature grown Mg doped GaN films. Journal of Applied Physics. 115(16). 40 indexed citations
9.
Li, X. J., Desheng Zhao, Desheng Jiang, et al.. (2014). The significant effect of the thickness of Ni film on the performance of the Ni/Au Ohmic contact to p-GaN. Journal of Applied Physics. 116(16). 11 indexed citations
10.
Yang, Jun, Degang Zhao, Desheng Jiang, et al.. (2014). Effects of quantum well number on spectral response of InGaN/GaN multiple quantum well solar cells. physica status solidi (a). 211(9). 2157–2160. 7 indexed citations
12.
13.
Le, L. C., Desheng Jiang, L. Wu, et al.. (2013). Effect of V-defects on the performance deterioration of InGaN/GaN multiple-quantum-well light-emitting diodes with varying barrier layer thickness. Journal of Applied Physics. 114(14). 19 indexed citations
14.
Wu, Liangliang, Desheng Zhao, Desheng Jiang, et al.. (2013). Effects of thin heavily Mg-doped GaN capping layer on ohmic contact formation of p-type GaN. Semiconductor Science and Technology. 28(10). 105020–105020. 13 indexed citations
15.
Zhao, Degang, Desheng Jiang, Liangliang Wu, et al.. (2012). Effect of dual buffer layer structure on the epitaxial growth of AlN on sapphire. Journal of Alloys and Compounds. 544. 94–98. 9 indexed citations
16.
Le, L. C., Desheng Jiang, L. Wu, et al.. (2012). Carriers capturing of V-defect and its effect on leakage current and electroluminescence in InGaN-based light-emitting diodes. Applied Physics Letters. 101(25). 56 indexed citations
17.
Feng, Meixin, Desheng Jiang, Degang Zhao, et al.. (2012). Improvement of characteristics of InGaN-based laser diodes with undoped InGaN upper waveguide layer. Journal of Applied Physics. 112(11). 25 indexed citations
18.
Wu, Liang, Dan Zhao, Desheng Jiang, et al.. (2012). Positive and negative effects of oxygen in thermal annealing of p-type GaN. Semiconductor Science and Technology. 27(8). 85017–85017. 8 indexed citations
19.
Le, L. C., Degang Zhao, Desheng Jiang, et al.. (2012). Effect of light Si-doping on the near-band-edge emissions in high quality GaN. Journal of Applied Physics. 112(5). 8 indexed citations
20.
Zhao, Desheng, L. C. Le, Liangliang Wu, et al.. (2010). Relationship between the growth rate and Al incorporation of AlGaN by metalorganic chemical vapor deposition. Journal of Alloys and Compounds. 509(3). 748–750. 5 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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