Jeffrey M. Gaskell

778 total citations
28 papers, 668 citations indexed

About

Jeffrey M. Gaskell is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Jeffrey M. Gaskell has authored 28 papers receiving a total of 668 indexed citations (citations by other indexed papers that have themselves been cited), including 25 papers in Electrical and Electronic Engineering, 25 papers in Materials Chemistry and 4 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Jeffrey M. Gaskell's work include Semiconductor materials and devices (21 papers), Electronic and Structural Properties of Oxides (13 papers) and Ferroelectric and Piezoelectric Materials (7 papers). Jeffrey M. Gaskell is often cited by papers focused on Semiconductor materials and devices (21 papers), Electronic and Structural Properties of Oxides (13 papers) and Ferroelectric and Piezoelectric Materials (7 papers). Jeffrey M. Gaskell collaborates with scholars based in United Kingdom, China and Spain. Jeffrey M. Gaskell's co-authors include Paul R. Chalker, Helen C. Aspinall, Anthony C. Jones, David W. Sheel, M. Werner, Stephen Taylor, Richard J. Potter, Otto L. Muskens, Anthony C. Jones and S. Taylor and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Chemistry of Materials.

In The Last Decade

Jeffrey M. Gaskell

28 papers receiving 652 citations

Peers

Jeffrey M. Gaskell

EEE

EOMM

Jung Young Cho South Korea

Tuerdi Wumaier China

Hao Ding China

V.M. Jali India

Tommy Lorenz Germany

Tanmay Ghosh Singapore

Huy‐Binh Do Taiwan

M. Werner United Kingdom

Erika Widenkvist Sweden

Jung Young Cho South Korea

Jeffrey M. Gaskell

425 ×0.9

EEE

639 ×1.5

195 ×1.3

EOMM

99 ×1.3

70 ×1.0

Citations per year, relative to Jeffrey M. Gaskell Jeffrey M. Gaskell (= 1×) peers Jung Young Cho

Countries citing papers authored by Jeffrey M. Gaskell

Since Specialization

Citations

This map shows the geographic impact of Jeffrey M. Gaskell's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Jeffrey M. Gaskell with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Jeffrey M. Gaskell more than expected).

Fields of papers citing papers by Jeffrey M. Gaskell

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Jeffrey M. Gaskell. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Jeffrey M. Gaskell. The network helps show where Jeffrey M. Gaskell may publish in the future.

Co-authorship network of co-authors of Jeffrey M. Gaskell

This figure shows the co-authorship network connecting the top 25 collaborators of Jeffrey M. Gaskell. A scholar is included among the top collaborators of Jeffrey M. Gaskell based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Jeffrey M. Gaskell. Jeffrey M. Gaskell is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Muskens, Otto L., Luca Bergamini, Yudong Wang, et al.. (2016). Antenna-assisted picosecond control of nanoscale phase transition in vanadium dioxide. Light Science & Applications. 5(10). e16173–e16173. 90 indexed citations

Gaskell, Jeffrey M., Mohammad Afzaal, David W. Sheel, et al.. (2016). Optimised atmospheric pressure CVD of monoclinic VO2 thin films with picosecond phase transition. Surface and Coatings Technology. 287. 160–165. 16 indexed citations

Yates, Heather M., et al.. (2015). APCVD of dual layer transparent conductive oxides for photovoltaic applications. Thin Solid Films. 590. 260–265. 6 indexed citations

Zhao, Chun, Stephen Taylor, M. Werner, et al.. (2012). Thermal Stability of Neodymium Aluminates High‐κ Dielectric Deposited by Liquid Injection MOCVD Using Single‐Source Heterometallic Alkoxide Precursors. Journal of Nanomaterials. 2012(1). 60 indexed citations

Gaskell, Jeffrey M. & David W. Sheel. (2011). Deposition of indium tin oxide by atmospheric pressure chemical vapour deposition. Thin Solid Films. 520(12). 4110–4113. 29 indexed citations

Zhao, Chengzhi, S. Taylor, M. Werner, et al.. (2009). Dielectric relaxation of lanthanum doped zirconium oxide. Journal of Applied Physics. 105(4). 28 indexed citations

Werner, M., Chun Zhao, S. Taylor, et al.. (2009). Permittivity enhancement and dielectric relaxation of doped hafnium and zirconium oxide. 92. 625–627. 7 indexed citations

Zhao, Cezhou, Stephen Taylor, M. Werner, et al.. (2009). High-k materials and their response to gamma ray radiation. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 27(1). 411–415. 26 indexed citations

Zhao, Chengzhi, S. Taylor, M. Werner, et al.. (2009). Frequency dispersion and dielectric relaxation of La2Hf2O7. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 27(1). 333–337. 15 indexed citations

10.

Gaskell, Jeffrey M., Anthony C. Jones, Helen C. Aspinall, et al.. (2007). Deposition of lanthanum zirconium oxide high-κ films by liquid injection atomic layer deposition. Applied Physics Letters. 91(11). 31 indexed citations

11.

Gaskell, Jeffrey M., Anthony C. Jones, Helen C. Aspinall, et al.. (2007). Deposition of Pr- and Nd-aluminate by Liquid Injection MOCVD and ALD Using Single-Source Heterometallic Alkoxide Precursors. Chemistry of Materials. 19(19). 4796–4803. 17 indexed citations

12.

Aspinall, Helen C., J.F. Bickley, Jeffrey M. Gaskell, et al.. (2007). Precursors for MOCVD and ALD of Rare Earth Oxides−Complexes of the Early Lanthanides with a Donor-Functionalized Alkoxide Ligand. Inorganic Chemistry. 46(15). 5852–5860. 29 indexed citations

13.

Gaskell, Jeffrey M., Anthony C. Jones, Paul R. Chalker, et al.. (2007). Deposition of Lanthanum Zirconium Oxide High‐k Films by Liquid Injection ALD and MOCVD. Chemical Vapor Deposition. 13(12). 684–690. 19 indexed citations

14.

Jones, Anthony C., Helen C. Aspinall, Paul R. Chalker, et al.. (2006). MOCVD and ALD of High‐k Dielectric Oxides Using Alkoxide Precursors. Chemical Vapor Deposition. 12(2-3). 83–98. 50 indexed citations

15.

Aspinall, Helen C., Jeffrey M. Gaskell, Anthony C. Jones, et al.. (2004). Growth of Neodymium Oxide This Films by Liquid Injection MOCVD Using a New Neodymium Alkoxide Precursor. Chemical Vapor Deposition. 10(6). 301–305. 22 indexed citations

16.

Aspinall, Helen C., Jeffrey M. Gaskell, Paul A. Williams, et al.. (2004). Growth of Praseodymium Oxide and Praseodymium Silicate Thin Films by Liquid Injection MOCVD. Chemical Vapor Deposition. 10(2). 83–89. 22 indexed citations

17.

Aspinall, Helen C., Jeffrey M. Gaskell, Paul A. Williams, et al.. (2004). Growth of Lanthanum Oxide Thin Films by Liquid Injection MOCVD Using a Novel Lathanum Alkoxide Precursor. Chemical Vapor Deposition. 10(1). 13–17. 31 indexed citations

18.

Potter, Richard J., Anthony C. Jones, Helen C. Aspinall, et al.. (2004). Growth of Gadolinium Oxide This Films by Liquid Injection MOCVD Using a New Gadolinium Alkoxide Precursor. Chemical Vapor Deposition. 10(6). 306–310. 17 indexed citations

19.

Aspinall, Helen C., Jeffrey M. Gaskell, Peter A. Williams, et al.. (2003). Growth of Praseodymium Oxide Thin Films by Liquid Injection MOCVD Using a Novel Praseodymium Alkoxide Precursor. Chemical Vapor Deposition. 9(5). 235–238. 34 indexed citations

20.

Aspinall, Helen C., Paul A. Williams, Jeffrey M. Gaskell, et al.. (2003). Growth of Lanthanum Silicate Thin Films by Liquid Injection MOCVD Using Tris[bis(trimethylsilyl)amido]lanthanum. Chemical Vapor Deposition. 9(1). 7–10. 19 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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