Peter N. Heys

615 total citations
23 papers, 514 citations indexed

About

Peter N. Heys is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Peter N. Heys has authored 23 papers receiving a total of 514 indexed citations (citations by other indexed papers that have themselves been cited), including 18 papers in Electrical and Electronic Engineering, 15 papers in Materials Chemistry and 8 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Peter N. Heys's work include Semiconductor materials and devices (15 papers), Ferroelectric and Negative Capacitance Devices (7 papers) and Electronic and Structural Properties of Oxides (6 papers). Peter N. Heys is often cited by papers focused on Semiconductor materials and devices (15 papers), Ferroelectric and Negative Capacitance Devices (7 papers) and Electronic and Structural Properties of Oxides (6 papers). Peter N. Heys collaborates with scholars based in United Kingdom, Estonia and Sweden. Peter N. Heys's co-authors include Paul R. Chalker, Anthony C. Jones, Helen C. Aspinall, Rajesh Odedra, Paul A. Williams, Kate Black, Fuquan Song, M. Werner, Matti Putkonen and S. Taylor and has published in prestigious journals such as Applied Physics Letters, Chemistry of Materials and Journal of Materials Chemistry.

In The Last Decade

Peter N. Heys

23 papers receiving 500 citations

Peers

Countries citing papers authored by Peter N. Heys

Since Specialization

Citations

This map shows the geographic impact of Peter N. Heys's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Peter N. Heys with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Peter N. Heys more than expected).

Fields of papers citing papers by Peter N. Heys

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Peter N. Heys. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Peter N. Heys. The network helps show where Peter N. Heys may publish in the future.

Co-authorship network of co-authors of Peter N. Heys

This figure shows the co-authorship network connecting the top 25 collaborators of Peter N. Heys. A scholar is included among the top collaborators of Peter N. Heys based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Peter N. Heys. Peter N. Heys is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Title	Journal	Authors	Indexed citations
1	Effect of deposition temperature on the properties of CeO2 films grown by atomic layer deposition	Thin Solid Films	P King, M. Werner et al.	30
2	A New Method for the Growth of Zinc Oxide Nanowires by MOCVD using Oxygen‐Donor Adducts of Dimethylzinc	Chemical Vapor Deposition	Paul R. Chalker, Anthony C. Jones et al.	13
3	Dimethylzinc adduct chemistry revisited: MOCVD of vertically aligned ZnO nanowires using the dimethylzinc 1,4-dioxane adduct	Journal of Crystal Growth	Anthony C. Jones, Sobia Ashraf et al.	2
4	Investigation of New 2,5‐Dimethylpyrrolyl Titanium Alkylamide and Alkoxide Complexes as Precursors for the Liquid Injection MOCVD of TiO₂	Chemical Vapor Deposition	Kate Black, Anthony C. Jones et al.	9
5	The optical properties of vertically aligned ZnO nanowires deposited using a dimethylzinc adduct	Nanotechnology	Anthony C. Jones, I. Alexandrou et al.	15
6	MOCVD and ALD of CeO₂ Thin Films using a Novel Monomeric Ce^IV Alkoxide Precursor	Chemical Vapor Deposition	Helen C. Aspinall, Anthony C. Jones et al.	27
7	Bis(cyclopentadienyl) zirconium(IV) amides as possible precursors for low pressure CVD and plasma-enhanced ALD	Inorganica Chimica Acta	Stephen E. Potts, Claire J. Carmalt et al.	11
8	Permittivity enhancement of hafnium dioxide high-κ films by cerium doping	Applied Physics Letters	Paul R. Chalker, M. Werner et al.	64
9	Design and Development of ALD Precursors for Microelectronics	ECS Transactions	Rajesh Odedra, Paul A. Williams et al.	5
10	Deposition of ZrO2 and HfO2 thin films by liquid injection MOCVD and ALD using ansa-metallocene zirconium and hafnium precursors	Journal of Materials Chemistry	Kate Black, Helen C. Aspinall et al.	32
11	Deposition of lanthanum zirconium oxide high-κ films by liquid injection atomic layer deposition	Applied Physics Letters	Jeffrey M. Gaskell, Anthony C. Jones et al.	31
12	Deposition of Lanthanum Zirconium Oxide High‐k Films by Liquid Injection ALD and MOCVD	Chemical Vapor Deposition	Jeffrey M. Gaskell, Anthony C. Jones et al.	19
13	Thermal stability studies for advanced Hafnium and Zirconium ALD precursors	Surface and Coatings Technology	S. Rushworth, Hywel O. Davies et al.	22
14	Liquid injection MOCVD and ALD of ZrO2 using Zr–cyclopentadienyl precursors	Surface and Coatings Technology	Jeffrey M. Gaskell, Anthony C. Jones et al.	18
15	Growth of HfO₂ by Liquid Injection MOCVD and ALD Using New Hafnium‐Cyclopentadienyl Precursors	Chemical Vapor Deposition	Jeffrey M. Gaskell, Anthony C. Jones et al.	16
16	Atomic Layer Deposition of HfO₂ Thin Films Exploiting Novel Cyclopentadienyl Precursors at High Temperatures	Chemistry of Materials	Jaakko Niinistö, Matti Putkonen et al.	50
17	Complexes of platinum and palladium with tertiary dimethoxyphenylphosphines: attempts to effect O- or C-metallation	Journal of the Chemical Society Dalton Transactions	H. D. EMPSALL, Peter N. Heys et al.	19
18	Some unusual iridium complexes formed from (2,6-dimethoxyphenyl) and (2,3-dimethoxyphenyl)-di-t-butylphosphine: crystal structure of [2-di-t-butylphosphino-3-methoxyphenoxo-OP]{2-[(2-hydroxy-6-methoxyphenyl)t-butylphosphino]-2-methylpropanato(2—)-C¹PO²}-(methyl isocyanide)iridium(III)	Journal of the Chemical Society Dalton Transactions	H. D. EMPSALL, Peter N. Heys et al.	11
19	Some complexes of rhodium and iridium with 2-(di-t-butylphosphinomethyl)-1-methoxy-4-methylbenzene	Transition Metal Chemistry	H. D. EMPSALL, Peter N. Heys et al.	7
20	Synthesis and structural characteristics of planar iridium(II) complexes	Journal of the Chemical Society Chemical Communications	R. Mason, K. Mark Thomas et al.	20

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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