J. Tihanyi

745 total citations
19 papers, 558 citations indexed

About

J. Tihanyi is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Biomedical Engineering. According to data from OpenAlex, J. Tihanyi has authored 19 papers receiving a total of 558 indexed citations (citations by other indexed papers that have themselves been cited), including 19 papers in Electrical and Electronic Engineering, 2 papers in Atomic and Molecular Physics, and Optics and 2 papers in Biomedical Engineering. Recurrent topics in J. Tihanyi's work include Advancements in Semiconductor Devices and Circuit Design (14 papers), Semiconductor materials and devices (12 papers) and Silicon Carbide Semiconductor Technologies (9 papers). J. Tihanyi is often cited by papers focused on Advancements in Semiconductor Devices and Circuit Design (14 papers), Semiconductor materials and devices (12 papers) and Silicon Carbide Semiconductor Technologies (9 papers). J. Tihanyi collaborates with scholars based in Germany, Hungary and United States. J. Tihanyi's co-authors include H. Schlötterer, Josef Štengl, H. Strack, Gerald Deboy, Heiko B. Weber, Dietrich Widmann, J. Krauße, K. Goser and Patrick Huber and has published in prestigious journals such as IEEE Journal of Solid-State Circuits, IEEE Transactions on Electron Devices and Solid-State Electronics.

In The Last Decade

J. Tihanyi

18 papers receiving 485 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
J. Tihanyi Germany	8	544	51	31	21	15	19	558
P. Rossel France	12	525 1.0×	82 1.6×	20 0.6×	18 0.9×	24 1.6×	81	550
G. Charitat France	10	343 0.6×	28 0.5×	12 0.4×	22 1.0×	36 2.4×	44	349
M. Kurata Japan	13	331 0.6×	158 3.1×	22 0.7×	14 0.7×	10 0.7×	28	340
C Bulucea United States	10	330 0.6×	67 1.3×	9 0.3×	31 1.5×	26 1.7×	30	342
D.C. D’Avanzo United States	12	355 0.7×	126 2.5×	45 1.5×	41 2.0×	13 0.9×	24	374
A.T. Wu United States	13	417 0.8×	104 2.0×	19 0.6×	27 1.3×	48 3.2×	28	434
F.J. Schmückle Germany	15	542 1.0×	63 1.2×	19 0.6×	50 2.4×	11 0.7×	45	556
Rik Jos Sweden	14	560 1.0×	43 0.8×	73 2.4×	18 0.9×	17 1.1×	28	573
Toshihiro Sekigawa Japan	9	339 0.6×	34 0.7×	18 0.6×	40 1.9×	46 3.1×	48	353
J. Adkisson United States	10	181 0.3×	43 0.8×	11 0.4×	16 0.8×	9 0.6×	28	189

Countries citing papers authored by J. Tihanyi

Since Specialization

Citations

This map shows the geographic impact of J. Tihanyi's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Tihanyi with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Tihanyi more than expected).

Fields of papers citing papers by J. Tihanyi

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Tihanyi. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Tihanyi. The network helps show where J. Tihanyi may publish in the future.

Co-authorship network of co-authors of J. Tihanyi

This figure shows the co-authorship network connecting the top 25 collaborators of J. Tihanyi. A scholar is included among the top collaborators of J. Tihanyi based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J. Tihanyi. J. Tihanyi is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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19 of 19 papers shown

1.

Deboy, Gerald, et al.. (2002). A new generation of high voltage MOSFETs breaks the limit line of silicon. 683–685. 311 indexed citations

2.

Krauße, J. & J. Tihanyi. (1989). Smart SIPMOS: Der intelligente Leistungsschalter. Electrical Engineering. 72(2). 83–88. 1 indexed citations

3.

Tihanyi, J.. (1987). Smart High Side Switches for Automotive Applications. ECS Proceedings Volumes. 1987-13(1). 11–19. 2 indexed citations

4.

Tihanyi, J.. (1982). Integrated power devices. 6–10. 9 indexed citations

5.

Tihanyi, J., et al.. (1982). Technology Trends in Power Devices. 1–5. 1 indexed citations

6.

Štengl, Josef, H. Strack, & J. Tihanyi. (1981). Power MOS transistors for 1000 V blocking voltage. 422–425. 4 indexed citations

7.

Tihanyi, J.. (1980). Functional integration of power MOS and bipolar devices. 75–78. 15 indexed citations

8.

Tihanyi, J., Patrick Huber, & Josef Štengl. (1980). Switching performance of SIPMOS transistors. 9(4). 195–199. 1 indexed citations

9.

Tihanyi, J.. (1980). A qualitative study of the dc performance of SIPMOS transistors. 9(4). 181–189. 6 indexed citations

10.

Tihanyi, J., et al.. (1980). 2-D analysis of the negative resistance region of vertical power MOS-transistors. 95–99. 8 indexed citations

11.

Tihanyi, J., et al.. (1979). Switching performance of vertical siemens power MOSFET's. 692–692.

12.

Tihanyi, J. & Dietrich Widmann. (1977). DIMOS - A novel IC technology with submicron effective channel MOSFETs. 399–401. 7 indexed citations

13.

Tihanyi, J. & H. Schlötterer. (1975). Properties of ESFI MOS transistors due to the floating substrate and the finite volume. IEEE Transactions on Electron Devices. 22(11). 1017–1023. 101 indexed citations

14.

Tihanyi, J. & H. Schlötterer. (1975). Influence of the floating substrate potential on the characteristics of ESFI MOS transistors. Solid-State Electronics. 18(4). 309–314. 59 indexed citations

15.

Tihanyi, J. & H. Schlötterer. (1974). Properties of ESFI MOS Transistors due to the floating substrate and the finite volume. 39–42. 4 indexed citations

16.

Tihanyi, J., et al.. (1974). Ion-implanted ESFI MOS devices with short switching times. IEEE Journal of Solid-State Circuits. 9(5). 250–256. 6 indexed citations

17.

Goser, K., et al.. (1974). High-density static ESFI MOS memory cells. IEEE Journal of Solid-State Circuits. 9(5). 234–238. 3 indexed citations

18.

Tihanyi, J.. (1970). Doping profile measurements on silicon epitaxial layers with field controlled planar diodes. Solid-State Electronics. 13(3). 309–315. 3 indexed citations

19.

Tihanyi, J., et al.. (1967). Observation of surface phenomena on semiconductor devices by a light spot scanning method. Solid-State Electronics. 10(3). 235–239. 17 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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