J. Stemmer

481 total citations
25 papers, 396 citations indexed

About

J. Stemmer is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Electrical and Electronic Engineering. According to data from OpenAlex, J. Stemmer has authored 25 papers receiving a total of 396 indexed citations (citations by other indexed papers that have themselves been cited), including 25 papers in Condensed Matter Physics, 15 papers in Electronic, Optical and Magnetic Materials and 11 papers in Electrical and Electronic Engineering. Recurrent topics in J. Stemmer's work include GaN-based semiconductor devices and materials (25 papers), Ga2O3 and related materials (15 papers) and ZnO doping and properties (11 papers). J. Stemmer is often cited by papers focused on GaN-based semiconductor devices and materials (25 papers), Ga2O3 and related materials (15 papers) and ZnO doping and properties (11 papers). J. Stemmer collaborates with scholars based in Germany, Russia and Spain. J. Stemmer's co-authors include J. Aderhold, T. Rotter, J. Graul, D. Mistele, O. Semchinova, F. Fedler, V. Yu. Davydov, V. Schwegler, M. Kamp and C. Kirchner and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Crystal Growth.

In The Last Decade

J. Stemmer

24 papers receiving 387 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
J. Stemmer Germany 11 315 200 189 132 86 25 396
F. Fedler Germany 10 308 1.0× 187 0.9× 165 0.9× 141 1.1× 93 1.1× 25 382
Tyler Flack United States 3 248 0.8× 122 0.6× 221 1.2× 108 0.8× 49 0.6× 7 342
R. Tyagi United States 6 300 1.0× 152 0.8× 382 2.0× 106 0.8× 81 0.9× 7 469
V. Ivantsov United States 10 244 0.8× 115 0.6× 142 0.8× 120 0.9× 52 0.6× 37 321
Weijun Luo China 12 317 1.0× 148 0.7× 286 1.5× 99 0.8× 90 1.0× 58 433
Norikazu Nakamura Japan 12 347 1.1× 167 0.8× 280 1.5× 127 1.0× 72 0.8× 31 418
Shinji Yamada Japan 11 391 1.2× 167 0.8× 360 1.9× 103 0.8× 70 0.8× 24 503
Lung-Hsing Hsu Taiwan 9 156 0.5× 86 0.4× 159 0.8× 96 0.7× 54 0.6× 19 292
Yoshiharu Anda Japan 12 376 1.2× 208 1.0× 486 2.6× 102 0.8× 46 0.5× 27 563
N. Killat United Kingdom 11 428 1.4× 92 0.5× 385 2.0× 171 1.3× 66 0.8× 18 480

Countries citing papers authored by J. Stemmer

Since Specialization
Citations

This map shows the geographic impact of J. Stemmer's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Stemmer with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Stemmer more than expected).

Fields of papers citing papers by J. Stemmer

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Stemmer. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Stemmer. The network helps show where J. Stemmer may publish in the future.

Co-authorship network of co-authors of J. Stemmer

This figure shows the co-authorship network connecting the top 25 collaborators of J. Stemmer. A scholar is included among the top collaborators of J. Stemmer based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J. Stemmer. J. Stemmer is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Mistele, D., T. Rotter, V. Schwegler, et al.. (2002). First AlGaN/GaN MOSFET with photoanodic gate dielectric. Materials Science and Engineering B. 93(1-3). 107–111. 47 indexed citations
2.
Rotter, T., D. Mistele, J. Stemmer, et al.. (2001). First AlGaN/GaN metal oxide semiconductor heterostructurefieldeffect transistor based on photoanodic oxide. Electronics Letters. 37(11). 715–716. 10 indexed citations
3.
Sánchez, Ana M., F. J. Pacheco, Sergio I. Molina, et al.. (2001). Structural characterization of high temperature AlN intermediate layer in GaN grown by molecular beam epitaxy. Materials Science and Engineering B. 80(1-3). 299–303. 3 indexed citations
4.
Mistele, D., T. Rotter, Z. Bougrioua, et al.. (2001). Heterostructure Field Effect Transistor Types with Novel Gate Dielectrics. physica status solidi (a). 188(1). 255–258. 1 indexed citations
5.
Fedler, F., J. Stemmer, R. J. Hauenstein, et al.. (2001). Effect of High Temperature Single and Multiple AlN Intermediate Layers on N-polar and Ga-polar GaN Grown by Molecular Beam Epitaxy. MRS Proceedings. 693. 1 indexed citations
6.
Mistele, D., F. Fedler, T. Rotter, et al.. (2001). Investigation of Ni/Au-contacts on p-GaN annealed in different atmospheres. Journal of Crystal Growth. 230(3-4). 564–568. 26 indexed citations
7.
Rotter, T., D. Mistele, F. Fedler, et al.. (2001). Electrical properties of photoanodically generated thin oxide films on n-GaN. Journal of Crystal Growth. 230(3-4). 602–606. 12 indexed citations
8.
Semchinova, O., et al.. (2001). Study of MBE-Grown GaN/AlGaN Quantum Well Structures by Two Wavelength Excited Photoluminescence. physica status solidi (a). 183(1). 189–195. 10 indexed citations
9.
Sánchez, Ana M., F. J. Pacheco, Sergio I. Molina, et al.. (2001). Critical thickness of high-temperature AIN interlayers in GaN on sapphire (0001). Journal of Electronic Materials. 30(5). L17–L20. 12 indexed citations
10.
Aderhold, J., F. Fedler, D. Mistele, et al.. (2000). Electron Beam Pumping in Nitride Vertical Cavities with GaN/ Al0.25 Ga0.75 N Bragg Reflectors. MRS Internet Journal of Nitride Semiconductor Research. 5(S1). 654–660. 1 indexed citations
11.
Aderhold, J., et al.. (2000). Electron beam pumping in nitride vertical cavities with GaN/Al 0.38 Ga 0.62 N Bragg reflectors. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 3944. 844–844.
12.
Emtsev, V. V., V. Yu. Davydov, W. V. Lundin, et al.. (2000). Annealing behaviour of electrically active point defects in gamma-irradiated n-GaN films. Journal of Crystal Growth. 210(1-3). 273–277. 2 indexed citations
13.
Emtsev, V. V., V. Yu. Davydov, W. V. Lundin, et al.. (2000). Point defects in gamma-irradiated n-GaN. Semiconductor Science and Technology. 15(1). 73–78. 39 indexed citations
14.
Klochikhin, A. A., V. Yu. Davydov, I. N. Goncharuk, et al.. (2000). Statistical Ga clusters andA1(TO)gap mode inAlxGa1−xNalloys. Physical review. B, Condensed matter. 62(4). 2522–2535. 8 indexed citations
15.
Rotter, T., D. Mistele, J. Stemmer, et al.. (2000). Photoinduced oxide film formation on n-type GaN surfaces using alkaline solutions. Applied Physics Letters. 76(26). 3923–3925. 80 indexed citations
16.
Aderhold, J., V. Yu. Davydov, F. Fedler, et al.. (2000). Electronic and structural properties of InN thin films grown by MOMBE on sapphire substrates. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 4086. 82–82. 2 indexed citations
17.
Davydov, V. Yu., I. N. Goncharuk, М. В. Байдакова, et al.. (1999). Raman spectroscopy of disorder effects in AlxGa1−xN solid solutions. Materials Science and Engineering B. 59(1-3). 222–225. 8 indexed citations
18.
Mistele, D., J. Aderhold, T. Rotter, et al.. (1999). Influence of pre-etching on specific contact parameters for metal-GaN contacts. Semiconductor Science and Technology. 14(7). 637–641. 5 indexed citations
19.
Rotter, T., J. Aderhold, D. Mistele, et al.. (1999). Smooth GaN surfaces by photoinduced electro-chemical etching. Materials Science and Engineering B. 59(1-3). 350–354. 11 indexed citations
20.
Rotter, T., D. Uffmann, Jörg Ackermann, et al.. (1997). Current Controlled Photoelectrochemical Etching of Gan Leaving Smooth Surfaces. MRS Proceedings. 482. 10 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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