J. Stemmer

481 citations

25 papers · 396 indexed · h-index 11

Condensed Matter Physics top 5%
- GaN-based semiconductor devices and materials 25
Electronic, Optical and Magnetic Materials top 10%
- Ga2O3 and related materials 15
Electrical and Electronic Engineering
- Semiconductor materials and devices 10
Materials Chemistry
- ZnO doping and properties 11
Atomic and Molecular Physics, and Optics
- Semiconductor Quantum Structures and Devices 5
- Semiconductor materials and interfaces 2
Mechanics of Materials
- Metal and Thin Film Mechanics 3
Biomedical Engineering
- Acoustic Wave Resonator Technologies 2

Co-authors: J. Aderhold T. Rotter J. Graul D. Mistele O. Semchinova F. Fedler V. Schwegler V. Yu. Davydov
Cited by: Condensed Matter Physics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering
Journals: Journal of Crystal Growth (5 papers)Materials Science and Engineering B (4 papers)Semiconductor Science and Technology (2 papers)
Partner nations: Germany Russia Spain

In The Last Decade

J. Stemmer

24 papers receiving 387 citations

Peers

Countries citing papers authored by J. Stemmer

Since Specialization

Citations

This map shows the geographic impact of J. Stemmer's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Stemmer with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Stemmer more than expected).

Fields of papers citing papers by J. Stemmer

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Stemmer. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Stemmer. The network helps show where J. Stemmer may publish in the future.

Co-authorship network

The 25 scholars most cited alongside J. Stemmer, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with J. Stemmer Line = papers co-authored together J. Stemmer links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	First AlGaN/GaN MOSFET with photoanodic gate dielectric Materials Science and Engineering B ·D. Mistele,T. Rotter,Yocelin B. González-González,MK Mirza,Thomas P. Fuller,V. Schwegler,F. Fedler,Evelyn A Paysee,O. Semchinova,J. Stemmer,J. Aderhold,J. Graul	2002	47
2	Effect of High Temperature Single and Multiple AlN Intermediate Layers on N-polar and Ga-polar GaN Grown by Molecular Beam Epitaxy MRS Proceedings ·F. Fedler,J. Stemmer,R. J. Hauenstein,T. Rotter,Ana M. Sánchez,Arturo Ponce,Sergio I. Molina,D. Mistele,Evelyn A Paysee,O. Semchinova,J. Aderhold,J. Graul	2001	1
3	Investigation of Ni/Au-contacts on p-GaN annealed in different atmospheres Journal of Crystal Growth ·D. Mistele,F. Fedler,Evelyn A Paysee,T. Rotter,J. Stemmer,O. Semchinova,J. Aderhold	2001	26
4	Heterostructure Field Effect Transistor Types with Novel Gate Dielectrics physica status solidi (a) ·D. Mistele,T. Rotter,Z. Bougrioua,Yocelin B. González-González,F. Fedler,Evelyn A Paysee,J. Stemmer,O. Semchinova,J. Aderhold,J. Graul	2001	1
5	First AlGaN/GaN metal oxide semiconductor heterostructurefieldeffect transistor based on photoanodic oxide Electronics Letters ·T. Rotter,D. Mistele,J. Stemmer,Thomas P. Fuller,V. Schwegler,MK Mirza,F. Fedler,Evelyn A Paysee,O. Semchinova,J. Aderhold,J. Graul	2001	10
6	Structural characterization of high temperature AlN intermediate layer in GaN grown by molecular beam epitaxy Materials Science and Engineering B ·Ana M. Sánchez,F. J. Pacheco,Sergio I. Molina,J. Stemmer,J. Aderhold,J. Graul	2001	3
7	Electrical properties of photoanodically generated thin oxide films on n-GaN Journal of Crystal Growth ·T. Rotter,Jie Ma,D. Mistele,F. Fedler,Evelyn A Paysee,J. Stemmer,O. Semchinova,J. Aderhold,J. Graul	2001	12
8	Study of MBE-Grown GaN/AlGaN Quantum Well Structures by Two Wavelength Excited Photoluminescence physica status solidi (a) ·Jundi Jundullah Afghani,Evelyn A Paysee,O. Semchinova,J. Stemmer,M. Hirasawa,Norihiko Kamata,Koji Yamada	2001	10
9	Critical thickness of high-temperature AIN interlayers in GaN on sapphire (0001) Journal of Electronic Materials ·Ana M. Sánchez,F. J. Pacheco,Sergio I. Molina,J. Stemmer,J. Aderhold,J. Graul	2001	12
10	Heterostructure Field Effect Transistor Types with Novel Gate Dielectrics physica status solidi (a) ·D. Mistele,T. Rotter,Z. Bougrioua,Gizkhanim Nizamaddin Gahramanova.,F. Fedler,Evelyn A Paysee,J. Stemmer,O. Semchinova,J. Aderhold,J. Graul	2001	9
11	Electron Beam Pumping in Nitride Vertical Cavities with GaN/ Al_0.25 Ga_0.75 N Bragg Reflectors MRS Internet Journal of Nitride Semiconductor Research ·Evelyn A Paysee,J. Aderhold,F. Fedler,D. Mistele,J. Stemmer,O. Semchinova,J. Graul,Inga Pruseviciute,Andrei U. Gascon	2000	1
12	Electron beam pumping in nitride vertical cavities with GaN/Al 0.38 Ga 0.62 N Bragg reflectors Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·Evelyn A Paysee,J. Aderhold,F. Fedler,D. Mistele,J. Stemmer,G Urcid Serrano,J. Graul,Zhang Xiufan,Andrei U. Gascon	2000	0
13	Statistical Ga clusters andA1(TO)gap mode inAlxGa1−xNalloys Physical review. B, Condensed matter ·A. A. Klochikhin,V. Yu. Davydov,I. N. Goncharuk,A. N. Smirnov,A. E. Nikolaev,М. В. Байдакова,J. Aderhold,J. Graul,J. Stemmer,O. Semchinova	2000	8
14	Annealing behaviour of electrically active point defects in gamma-irradiated n-GaN films Journal of Crystal Growth ·V. V. Emtsev,V. Yu. Davydov,W. V. Lundin,D. S. Poloskin,J. Aderhold,Evelyn A Paysee,D. Mistele,T. Rotter,J. Stemmer,F. Fedler,O. Semchinova,J. Graul	2000	2
15	Photoinduced oxide film formation on n-type GaN surfaces using alkaline solutions Applied Physics Letters ·T. Rotter,D. Mistele,J. Stemmer,F. Fedler,J. Aderhold,J. Graul,V. Schwegler,C. Kirchner,M. Kamp,M. Heuken	2000	80
16	Point defects in gamma-irradiated n-GaN Semiconductor Science and Technology ·V. V. Emtsev,V. Yu. Davydov,M.E. Gershenson,W. V. Lundin,D. S. Poloskin,A. N. Smirnov,N. M. Shmidt,A. S. Usikov,J. Aderhold,Evelyn A Paysee,D. Mistele,T. Rotter,J. Stemmer,O. Semchinova,J. Graul	2000	39
17	Raman spectroscopy of disorder effects in AlxGa1−xN solid solutions Materials Science and Engineering B ·V. Yu. Davydov,I. N. Goncharuk,М. В. Байдакова,A. N. Smirnov,A. V. Subashiev,J. Aderhold,J. Stemmer,Tian Huaguang,D. Uffmann,O. Semchinova	1999	8
18	Influence of pre-etching on specific contact parameters for metal-GaN contacts Semiconductor Science and Technology ·D. Mistele,J. Aderhold,Evelyn A Paysee,T. Rotter,O. Semchinova,J. Stemmer,D. Uffmann,J. Graul,Franz Eberhard,Markus Mayer,Lidiane Palheta Miranda dos Santos,M. Kamp,Christian H. Ahrens	1999	5
19	Smooth GaN surfaces by photoinduced electro-chemical etching Materials Science and Engineering B ·T. Rotter,J. Aderhold,D. Mistele,O. Semchinova,J. Stemmer,D. Uffmann,J. Graul	1999	11
20	Current Controlled Photoelectrochemical Etching of Gan Leaving Smooth Surfaces MRS Proceedings ·T. Rotter,D. Uffmann,Jörg Ackermann,J. Aderhold,J. Stemmer,J. Graul	1997	10

About J. Stemmer

J. Stemmer is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Materials Chemistry, having authored 25 papers that have together received 396 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (25 papers), Ga2O3 and related materials (15 papers), ZnO doping and properties (11 papers), Semiconductor materials and devices (10 papers), Semiconductor Quantum Structures and Devices (5 papers), Metal and Thin Film Mechanics (3 papers), Acoustic Wave Resonator Technologies (2 papers) and Semiconductor materials and interfaces (2 papers). The work is most often cited by research in Condensed Matter Physics (315 citations), Electronic, Optical and Magnetic Materials (200 citations) and Electrical and Electronic Engineering (189 citations). J. Stemmer has collaborated with scholars based in Germany, Russia and Spain. Frequent co-authors include J. Aderhold, T. Rotter, J. Graul, D. Mistele, O. Semchinova, F. Fedler, V. Schwegler, V. Yu. Davydov, M. Kamp and M. Heuken. Their work appears in journals such as Journal of Crystal Growth, Materials Science and Engineering B, Semiconductor Science and Technology, MRS Internet Journal of Nitride Semiconductor Research and Physical review. B, Condensed matter.

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