J. Aderhold

2.4k citations

44 papers · 2.0k indexed · 1 hit paper · h-index 14

Impact in

Condensed Matter Physics top 0.5%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 2%
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 37
- GaN-based semiconductor devices and materials 37
Electronic, Optical and Magnetic Materials 23
- Ga2O3 and related materials 23

Co-authors: J. Graul V. Yu. Davydov O. Semchinova A. A. Klochikhin Hisatomo Harima V. V. Emtsev F. Bechstedt А. В. Мудрый
Journals: Journal of Crystal Growth (6 papers)physica status solidi (b) (4 papers)Materials Science and Engineering B (4 papers)Applied Physics Letters (2 papers)Journal of Electronic Materials (2 papers)
Partner nations: Germany Russia Japan

In The Last Decade

J. Aderhold

43 papers receiving 2.0k citations

Hit Papers

align trajectories log scale

Absorption and Emission of Hexagonal InN. Evidence of Narrow Fundamental Band Gap 2002 · 867 citations

Peers

Countries citing papers authored by J. Aderhold

Since Specialization

Citations

This map shows the geographic impact of J. Aderhold's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Aderhold with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Aderhold more than expected).

Fields of papers citing papers by J. Aderhold

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Aderhold. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Aderhold. The network helps show where J. Aderhold may publish in the future.

Co-authorship network

The 25 scholars most cited alongside J. Aderhold, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with J. Aderhold Line = papers co-authored together J. Aderhold links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Increasing the reuse of wood in bulky waste using artificial intelligence and imaging in the VIS, IR, and terahertz ranges Repository KITopen (Karlsruhe Institute of Technology) ·Zulkifli Mohd, 정규동, J. Aderhold, S.E. Belikov, Dovilė Čibiraitė, Einar Christian Soleiman, Fabian Friederich, Kawachi Kawachi, Michael Heizmann	2023	2
2	Multi-sensor data fusion using deep learning for bulky waste image classification Fraunhofer-Publica (Fraunhofer-Gesellschaft) ·Cao Long-y, Zulkifli Mohd, Yifan Jiang, Ahmed J. Afifi, J. Aderhold, Dovilė Čibiraitė, Sandra Lorenz, Richard Gloaguen, 정규동, Michael Heizmann	2023	3
3	Application of near-infrared spectroscopy for the fast detection and sorting of wood–plastic composites and waste wood treated with wood preservatives Wood Science and Technology ·Orchester der Stadt Hagen, Sana Kashgouli, J. Aderhold, Jan Gunschera, Peter Meinlschmidt, Tunga Salthammer	2015	43
4	Incorporation of dielectric layers into the processing of III-nitride-based heterostructure field-effect transistors Journal of Electronic Materials ·D. Mistele, T. Rotter, Andrew B. Horn, Or Katz, Z. Bougrioua, J. Aderhold, J. Graul, G. Bahir, J. Salzman	2003	2
5	HRTEM study of AlxGa1−xN/AlN DBR mirrors Diamond and Related Materials ·Arturo Ponce, Sergio I. Molina, F. Fedler, Evelyn A Paysee, O. Semchinova, J. Aderhold, J. Graul	2003	5
6	Photoluminescence, depth profile, and lattice instability of hexagonal InN films Applied Physics Letters ·O. Semchinova, J. Aderhold, J. Graul, A. V. Filimonov, Mohan Aditya Sadhanala	2003	19
7	High Reflectivity AlGaN/AlN DBR Mirrors Grown by PA‐MBE Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·F. Fedler, Evelyn A Paysee, R. J. Hauenstein, Arturo Ponce, Sergio I. Molina, O. Semchinova, J. Aderhold, J. Graul	2002	6
8	Composition dependence of optical phonon energies and Raman line broadening in hexagonalAlxGa1−xNalloys Physical review. B, Condensed matter ·V. Yu. Davydov, I. N. Goncharuk, A. N. Smirnov, A. E. Nikolaev, W. V. Lundin, A. S. Usikov, A. A. Klochikhin, J. Aderhold, J. Graul, O. Semchinova, Hisatomo Harima	2002	148
9	Effect of High Temperature Single and Multiple AlN Intermediate Layers on N-polar and Ga-polar GaN Grown by Molecular Beam Epitaxy MRS Proceedings ·F. Fedler, J. Stemmer, R. J. Hauenstein, T. Rotter, Ana M. Sánchez, Arturo Ponce, Sergio I. Molina, D. Mistele, Evelyn A Paysee, O. Semchinova, J. Aderhold, J. Graul	2001	1
10	Investigation of Ni/Au-contacts on p-GaN annealed in different atmospheres Journal of Crystal Growth ·D. Mistele, F. Fedler, Evelyn A Paysee, T. Rotter, J. Stemmer, O. Semchinova, J. Aderhold	2001	26
11	Heterostructure Field Effect Transistor Types with Novel Gate Dielectrics physica status solidi (a) ·D. Mistele, T. Rotter, Z. Bougrioua, Yocelin B. González-González, F. Fedler, Evelyn A Paysee, J. Stemmer, O. Semchinova, J. Aderhold, J. Graul	2001	1
12	First AlGaN/GaN metal oxide semiconductor heterostructurefieldeffect transistor based on photoanodic oxide Electronics Letters ·T. Rotter, D. Mistele, J. Stemmer, Thomas P. Fuller, V. Schwegler, MK Mirza, F. Fedler, Evelyn A Paysee, O. Semchinova, J. Aderhold, J. Graul	2001	10
13	Structural characterization of high temperature AlN intermediate layer in GaN grown by molecular beam epitaxy Materials Science and Engineering B ·Ana M. Sánchez, F. J. Pacheco, Sergio I. Molina, J. Stemmer, J. Aderhold, J. Graul	2001	3
14	Electrical properties of photoanodically generated thin oxide films on n-GaN Journal of Crystal Growth ·T. Rotter, Jie Ma, D. Mistele, F. Fedler, Evelyn A Paysee, J. Stemmer, O. Semchinova, J. Aderhold, J. Graul	2001	12
15	Electron Beam Pumping in Nitride Vertical Cavities with GaN/ Al_0.25 Ga_0.75 N Bragg Reflectors MRS Internet Journal of Nitride Semiconductor Research ·Evelyn A Paysee, J. Aderhold, F. Fedler, D. Mistele, J. Stemmer, O. Semchinova, J. Graul, Inga Pruseviciute, Andrei U. Gascon	2000	1
16	Electron beam pumping in nitride vertical cavities with GaN/Al 0.38 Ga 0.62 N Bragg reflectors Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·Evelyn A Paysee, J. Aderhold, F. Fedler, D. Mistele, J. Stemmer, G Urcid Serrano, J. Graul, Zhang Xiufan, Andrei U. Gascon	2000	0
17	Statistical Ga clusters andA1(TO)gap mode inAlxGa1−xNalloys Physical review. B, Condensed matter ·A. A. Klochikhin, V. Yu. Davydov, I. N. Goncharuk, A. N. Smirnov, A. E. Nikolaev, М. В. Байдакова, J. Aderhold, J. Graul, J. Stemmer, O. Semchinova	2000	8
18	Raman spectroscopy of disorder effects in AlxGa1−xN solid solutions Materials Science and Engineering B ·V. Yu. Davydov, I. N. Goncharuk, М. В. Байдакова, A. N. Smirnov, A. V. Subashiev, J. Aderhold, J. Stemmer, Tian Huaguang, D. Uffmann, O. Semchinova	1999	8
19	Influence of pre-etching on specific contact parameters for metal-GaN contacts Semiconductor Science and Technology ·D. Mistele, J. Aderhold, Evelyn A Paysee, T. Rotter, O. Semchinova, J. Stemmer, D. Uffmann, J. Graul, Franz Eberhard, Markus Mayer, Lidiane Palheta Miranda dos Santos, M. Kamp, Christian H. Ahrens	1999	5
20	Current Controlled Photoelectrochemical Etching of Gan Leaving Smooth Surfaces MRS Proceedings ·T. Rotter, D. Uffmann, Jörg Ackermann, J. Aderhold, J. Stemmer, J. Graul	1997	10

About J. Aderhold

J. Aderhold is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Materials Chemistry, Mechanics of Materials and Conservation, having authored 44 papers that have together received 2.0k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (37 papers), Ga2O3 and related materials (23 papers), ZnO doping and properties (16 papers), Semiconductor materials and devices (12 papers), Semiconductor Quantum Structures and Devices (8 papers), Thermography and Photoacoustic Techniques (4 papers), Metal and Thin Film Mechanics (4 papers) and Acoustic Wave Resonator Technologies (3 papers). The work is most often cited by research in Condensed Matter Physics (1.8k citations), Electronic, Optical and Magnetic Materials (1.1k citations), Atomic and Molecular Physics, and Optics (692 citations), Materials Chemistry (845 citations) and Mechanics of Materials (308 citations). J. Aderhold has collaborated with scholars based in Germany, Russia and Japan. Frequent co-authors include J. Graul, V. Yu. Davydov, O. Semchinova, A. A. Klochikhin, Hisatomo Harima, V. V. Emtsev, F. Bechstedt, А. В. Мудрый, С. В. Иванов and R. P. Seĭsyan. Their work appears in journals such as Journal of Crystal Growth, physica status solidi (b), Materials Science and Engineering B, Applied Physics Letters and Journal of Electronic Materials.

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