J. Aderhold

2.4k total citations · 1 hit paper
44 papers, 2.0k citations indexed

About

J. Aderhold is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Materials Chemistry. According to data from OpenAlex, J. Aderhold has authored 44 papers receiving a total of 2.0k indexed citations (citations by other indexed papers that have themselves been cited), including 37 papers in Condensed Matter Physics, 23 papers in Electronic, Optical and Magnetic Materials and 16 papers in Materials Chemistry. Recurrent topics in J. Aderhold's work include GaN-based semiconductor devices and materials (37 papers), Ga2O3 and related materials (23 papers) and ZnO doping and properties (16 papers). J. Aderhold is often cited by papers focused on GaN-based semiconductor devices and materials (37 papers), Ga2O3 and related materials (23 papers) and ZnO doping and properties (16 papers). J. Aderhold collaborates with scholars based in Germany, Russia and Japan. J. Aderhold's co-authors include J. Graul, V. Yu. Davydov, O. Semchinova, A. A. Klochikhin, Hisatomo Harima, V. V. Emtsev, F. Bechstedt, А. В. Мудрый, С. В. Иванов and R. P. Seĭsyan and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Crystal Growth.

In The Last Decade

J. Aderhold

43 papers receiving 2.0k citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Absorption and Emission of Hexagonal InN. Evidence of Narrow Fundamental Band Gap

2002 867 citations V. Yu. Davydov, A. A. Klochikhin et al. profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
J. Aderhold Germany	14	1.8k	1.1k	845	692	508	44	2.0k
Masahito Yamaguchi Japan	19	999 0.6×	576 0.5×	548 0.6×	352 0.5×	348 0.7×	87	1.3k
Bas B. Van Aken Netherlands	20	694 0.4×	1.7k 1.6×	1.3k 1.6×	296 0.4×	715 1.4×	88	2.6k
Kai Cheng China	34	3.2k 1.8×	1.8k 1.7×	822 1.0×	650 0.9×	2.4k 4.7×	143	3.6k
G. Ravikumar India	23	964 0.5×	626 0.6×	447 0.5×	330 0.5×	90 0.2×	100	1.6k
Ling Yang China	23	1.4k 0.8×	625 0.6×	370 0.4×	461 0.7×	1.3k 2.6×	154	1.8k
Min Ho Kim South Korea	12	554 0.3×	265 0.2×	248 0.3×	364 0.5×	243 0.5×	40	846
Jialin Chen China	22	596 0.3×	434 0.4×	476 0.6×	360 0.5×	217 0.4×	66	1.4k
Huarui Sun China	19	462 0.3×	279 0.3×	873 1.0×	126 0.2×	682 1.3×	72	1.3k
Alexey V. Ognev Russia	17	297 0.2×	414 0.4×	430 0.5×	766 1.1×	336 0.7×	118	1.2k

Countries citing papers authored by J. Aderhold

Since Specialization

Citations

This map shows the geographic impact of J. Aderhold's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Aderhold with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Aderhold more than expected).

Fields of papers citing papers by J. Aderhold

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Aderhold. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Aderhold. The network helps show where J. Aderhold may publish in the future.

Co-authorship network of co-authors of J. Aderhold

This figure shows the co-authorship network connecting the top 25 collaborators of J. Aderhold. A scholar is included among the top collaborators of J. Aderhold based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J. Aderhold. J. Aderhold is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Aderhold, J., et al.. (2023). Increasing the reuse of wood in bulky waste using artificial intelligence and imaging in the VIS, IR, and terahertz ranges. Repository KITopen (Karlsruhe Institute of Technology). 23–36. 2 indexed citations

Jiang, Yifan, Ahmed J. Afifi, J. Aderhold, et al.. (2023). Multi-sensor data fusion using deep learning for bulky waste image classification. Fraunhofer-Publica (Fraunhofer-Gesellschaft). 9–9. 3 indexed citations

Aderhold, J., et al.. (2015). Application of near-infrared spectroscopy for the fast detection and sorting of wood–plastic composites and waste wood treated with wood preservatives. Wood Science and Technology. 50(2). 313–331. 43 indexed citations

Mistele, D., T. Rotter, Andrew B. Horn, et al.. (2003). Incorporation of dielectric layers into the processing of III-nitride-based heterostructure field-effect transistors. Journal of Electronic Materials. 32(5). 355–363. 2 indexed citations

Ponce, Arturo, Sergio I. Molina, F. Fedler, et al.. (2003). HRTEM study of AlxGa1−xN/AlN DBR mirrors. Diamond and Related Materials. 12(3-7). 1178–1181. 5 indexed citations

Semchinova, O., et al.. (2003). Photoluminescence, depth profile, and lattice instability of hexagonal InN films. Applied Physics Letters. 83(26). 5440–5442. 19 indexed citations

Fedler, F., R. J. Hauenstein, Arturo Ponce, et al.. (2002). High Reflectivity AlGaN/AlN DBR Mirrors Grown by PA‐MBE. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 258–262. 6 indexed citations

Davydov, V. Yu., I. N. Goncharuk, A. N. Smirnov, et al.. (2002). Composition dependence of optical phonon energies and Raman line broadening in hexagonalAlxGa1−xNalloys. Physical review. B, Condensed matter. 65(12). 148 indexed citations

Fedler, F., J. Stemmer, R. J. Hauenstein, et al.. (2001). Effect of High Temperature Single and Multiple AlN Intermediate Layers on N-polar and Ga-polar GaN Grown by Molecular Beam Epitaxy. MRS Proceedings. 693. 1 indexed citations

10.

Mistele, D., F. Fedler, T. Rotter, et al.. (2001). Investigation of Ni/Au-contacts on p-GaN annealed in different atmospheres. Journal of Crystal Growth. 230(3-4). 564–568. 26 indexed citations

11.

Mistele, D., T. Rotter, Z. Bougrioua, et al.. (2001). Heterostructure Field Effect Transistor Types with Novel Gate Dielectrics. physica status solidi (a). 188(1). 255–258. 1 indexed citations

12.

Rotter, T., D. Mistele, J. Stemmer, et al.. (2001). First AlGaN/GaN metal oxide semiconductor heterostructurefieldeffect transistor based on photoanodic oxide. Electronics Letters. 37(11). 715–716. 10 indexed citations

13.

Sánchez, Ana M., F. J. Pacheco, Sergio I. Molina, et al.. (2001). Structural characterization of high temperature AlN intermediate layer in GaN grown by molecular beam epitaxy. Materials Science and Engineering B. 80(1-3). 299–303. 3 indexed citations

14.

Rotter, T., D. Mistele, F. Fedler, et al.. (2001). Electrical properties of photoanodically generated thin oxide films on n-GaN. Journal of Crystal Growth. 230(3-4). 602–606. 12 indexed citations

15.

Aderhold, J., F. Fedler, D. Mistele, et al.. (2000). Electron Beam Pumping in Nitride Vertical Cavities with GaN/ Al_0.25 Ga_0.75 N Bragg Reflectors. MRS Internet Journal of Nitride Semiconductor Research. 5(S1). 654–660. 1 indexed citations

16.

Aderhold, J., et al.. (2000). Electron beam pumping in nitride vertical cavities with GaN/Al 0.38 Ga 0.62 N Bragg reflectors. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 3944. 844–844.

17.

Klochikhin, A. A., V. Yu. Davydov, I. N. Goncharuk, et al.. (2000). Statistical Ga clusters andA1(TO)gap mode inAlxGa1−xNalloys. Physical review. B, Condensed matter. 62(4). 2522–2535. 8 indexed citations

18.

Davydov, V. Yu., I. N. Goncharuk, М. В. Байдакова, et al.. (1999). Raman spectroscopy of disorder effects in AlxGa1−xN solid solutions. Materials Science and Engineering B. 59(1-3). 222–225. 8 indexed citations

19.

Mistele, D., J. Aderhold, T. Rotter, et al.. (1999). Influence of pre-etching on specific contact parameters for metal-GaN contacts. Semiconductor Science and Technology. 14(7). 637–641. 5 indexed citations

20.

Rotter, T., D. Uffmann, Jörg Ackermann, et al.. (1997). Current Controlled Photoelectrochemical Etching of Gan Leaving Smooth Surfaces. MRS Proceedings. 482. 10 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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